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    2SK3566 Price and Stock

    Toshiba America Electronic Components 2SK3566(STA4,Q,M)

    MOSFET N-CH 900V 2.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3566(STA4,Q,M) Tube 1,074 1
    • 1 $1.56
    • 10 $1.56
    • 100 $0.992
    • 1000 $0.68492
    • 10000 $0.6025
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    Mouser Electronics 2SK3566(STA4,Q,M) 721
    • 1 $1.56
    • 10 $1.26
    • 100 $0.992
    • 1000 $0.644
    • 10000 $0.602
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    TME 2SK3566(STA4,Q,M) 288 1
    • 1 $1.19
    • 10 $0.95
    • 100 $0.86
    • 1000 $0.79
    • 10000 $0.79
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    Toshiba America Electronic Components 2SK3566(STA4QM)

    Trans MOSFET N-CH 900V 2.5A 3-Pin TO-220SIS - Bulk (Alt: 26M6257)
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    Avnet Americas 2SK3566(STA4QM) Bulk 22 Weeks, 4 Days 1
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    2SK3566(STA4QM) Bulk 12 Weeks 50
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    Toshiba America Electronic Components 2SK3566

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    Bristol Electronics 2SK3566 280
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    ComSIT USA 2SK3566 7
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    Toshiba America Electronic Components 2SK3566,S5Q(J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3566,S5Q(J 2,240
    • 1 $1.525
    • 10 $1.525
    • 100 $1.525
    • 1000 $0.61
    • 10000 $0.5338
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    Toshiba America Electronic Components 2SK3566(QM)

    MOS Power Transistors HV (>= 200V) (Alt: 2SK3566(Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia 2SK3566(QM) 24 Weeks 1,000
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    2SK3566 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK3566 Toshiba Field Effect Transistor / Silicon N Channel MOS Type Original PDF
    2SK3566 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3566(STA4,A,Q) Toshiba 2SK3566 - 2SK3566(STA4,A,Q) Original PDF
    2SK3566(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 2.5A TO-220SIS Original PDF

    2SK3566 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3566 transistor

    Abstract: No abstract text available
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK3566 K3566 transistor

    k3566

    Abstract: K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 k3566 K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133

    K3566 transistor

    Abstract: K3566 2SK3566 transistor k3566 K3566 data k356
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 K3566 transistor K3566 2SK3566 transistor k3566 K3566 data k356

    K3566

    Abstract: 2SK3566 k356 2SK3566 equivalent V5016
    Text: 2SK3566 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3566 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 5.6 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)


    Original     		PDF 2SK3566 SC-67 2-10U1B K3566 2SK3566 k356 2SK3566 equivalent V5016

    K3566

    Abstract: K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK3566 K3566 K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566

    2SK3566 equivalent

    Abstract: 2SK3566
    Text: TENTATIVE 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3566 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage


    Original     		PDF 2SK3566 2SK3566 equivalent 2SK3566

    K3566

    Abstract: 2sk3566 434MH equivalent k3566 k356
    Text: 2SK3566 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3566 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 5.6 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)


    Original     		PDF 2SK3566 SC-67 2-10U1B K3566 2sk3566 434MH equivalent k3566 k356

    K3566 transistor

    Abstract: K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 K3566 transistor K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566

    2SK3566

    Abstract: No abstract text available
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3566 2SK3566

    K3566

    Abstract: K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK3566 K3566 K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent

    K3566 transistor

    Abstract: k3566
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3566 K3566 transistor k3566

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    2SK3562

    Abstract: 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS
    Text: VOLUME 131 東芝半導体情報誌アイ 2003年6月号 CONTENTS 6 INFORMATION •大分に最先端システムLSI製造棟を建設 .P2 ■次世代携帯機器向けの 新しい小型SDメモリーカード .P2 ■1メガビットMRAMを開発 .P2


    Original     		PDF 03-3457-3405FAX. 300mmLSI 200343500300mm 100m2 800m2 700m2 TC7MTX03FK 10msMAX) 2SK3562 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03