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    K3564 Search Results

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    K3564 Price and Stock

    Toshiba America Electronic Components 2SK3564(STA4,Q,M)

    MOSFET N-CH 900V 3A TO220SIS
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    DigiKey 2SK3564(STA4,Q,M) Tube 290 1
    • 1 $2.11
    • 10 $1.35
    • 100 $0.9159
    • 1000 $0.66974
    • 10000 $0.58375
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    Mouser Electronics 2SK3564(STA4,Q,M) 381
    • 1 $1.32
    • 10 $1.09
    • 100 $0.876
    • 1000 $0.614
    • 10000 $0.571
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    TME 2SK3564(STA4,Q,M) 150 1
    • 1 $1.21
    • 10 $0.96
    • 100 $0.87
    • 1000 $0.87
    • 10000 $0.87
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    Chip1Stop 2SK3564(STA4,Q,M) Tube 50
    • 1 -
    • 10 $0.65
    • 100 $0.596
    • 1000 $0.596
    • 10000 $0.596
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    EBV Elektronik 2SK3564(STA4,Q,M) 600 19 Weeks 50
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    Powersight PK3564

    PWR ANLYZR DATALOGGER FIELD TEST
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    DigiKey PK3564 Box 10 1
    • 1 $4862
    • 10 $4862
    • 100 $4862
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    Powersight PK3564-PRO

    PWR ANLYZR DATALOGGER FIELD TEST
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    DigiKey PK3564-PRO Box 10 1
    • 1 $5168
    • 10 $5168
    • 100 $5168
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    Powersight PK3564-PRO+

    PWR ANLYZR DATALOGGER FIELD TEST
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    DigiKey PK3564-PRO+ Box 10 1
    • 1 $5711
    • 10 $5711
    • 100 $5711
    • 1000 $5711
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    Toshiba America Electronic Components 2SK3564(STA4QM)

    Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: 2SK3564(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3564(STA4QM) Tube 11,827 32 Weeks 1
    • 1 $0.58375
    • 10 $0.58375
    • 100 $0.58375
    • 1000 $0.58375
    • 10000 $0.58375
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    K3564 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3564

    Abstract: transistor K3564 K356 2SK35
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


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    PDF 2SK3564 k3564 transistor K3564 K356 2SK35

    transistor K3564

    Abstract: No abstract text available
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    PDF 2SK3564 transistor K3564

    transistor K3564

    Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


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    PDF 2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564

    k3564

    Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original
    PDF 2SK3564 k3564 transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a

    k3564

    Abstract: No abstract text available
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


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    PDF 2SK3564 k3564

    k3564

    Abstract: TR-22 2SK3564
    Text: K3564 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3564 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 3.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


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    PDF 2SK3564 SC-67 2-10U1B k3564 TR-22 2SK3564

    transistor K3564

    Abstract: K3564 K3564 toshiba
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


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    PDF 2SK3564 transistor K3564 K3564 K3564 toshiba

    k3564

    Abstract: 2SK3564 k356 MJ5001
    Text: K3564 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3564 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 3.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original
    PDF 2SK3564 SC-67 2-10U1B k3564 2SK3564 k356 MJ5001

    k3564

    Abstract: transistor K3564 2SK3564
    Text: K3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original
    PDF 2SK3564 k3564 transistor K3564 2SK3564