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    DA7202-00UH2 Renesas Electronics Corporation 10W Mono Class D Amplifier for 2S Battery-Operated Portable Devices Visit Renesas Electronics Corporation
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    REF 200U Datasheets Context Search

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    REF 200U

    Abstract: No abstract text available
    Text: 15.65±0.25 2.00 2.50 15.0 Insulator: UL94V-0 Rated Thermoplastic Color- White or Black 4-Ø0.92 2.71 2.00 Ref. Shell: Bronze Plating- 5um 200u" Tin-lead Over 2.5um (100u") Cu 7.62 Ref. 14.5 Ref. 2-Ø2.30 0.58 13.3 Ref. 7.00 Ref. Contacts: Phosphor Bronze


    Original     		UL94V-0 KUSBV-AS-1-N-WHT30 KUSBV-AS-1-N-BLK30 LR78160 REF 200U PDF

    ir touch screen

    Abstract: AD7877 AD7879 BAT23
    Text: Touch Screen Controller AD7877 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC 7 X– 10 Y+ 13 Y– 11 REF– AUX3/GPIO3 4 BAT1 3 9 TO 1 INPUT MUX BATTERY MONITOR IN SEQUENCER BAT2 2 REF+ CLOCK 12-BIT SUCCESSIVE APPROXIMATION ADC WITH TRACK-AND-HOLD RESULTS REGISTERS


    Original     		AD7877 12-BIT AD7877ACPZ-REEL AD7877ACPZ-REEL7 AD7877ACPZ-500RL71 AD7877ACBZ-REEL1 AD7877ACBZ-REEL71 EVAL-AD7877EBZ1 32-Lead ir touch screen AD7877 AD7879 BAT23 PDF

    ad7879

    Abstract: din 2510 NF
    Text: Touch Screen Controller AD7877 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC 7 X– 10 Y+ 13 Y– 11 REF– AUX3/GPIO3 4 BAT1 3 9 TO 1 I/P MUX BATTERY MONITOR IN SEQUENCER BAT2 2 REF+ CLOCK 12-BIT SUCCESSIVE APPROXIMATION ADC WITH TRACK-AND-HOLD RESULTS REGISTERS


    Original     		AD7877 32-lead, 25-ball CPZ-500RL71 AD7877ACBZ-REEL1 AD7877ACBZ-REEL71 EVAL-AD7877EB 32-Lead ad7879 din 2510 NF PDF

    Smart Core Z2

    Abstract: x-plate AD7877 0711S
    Text: Touch Screen Controller AD7877 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC 7 X– 10 Y+ 13 Y– 11 REF– AUX3/GPIO3 4 BAT1 3 9 TO 1 I/P MUX BATTERY MONITOR IN SEQUENCER BAT2 2 REF+ CLOCK 12-BIT SUCCESSIVE APPROXIMATION ADC WITH TRACK-AND-HOLD RESULTS REGISTERS


    Original     		AD7877 12-BIT D7877ACBZ-REEL71 EVAL-AD7877EB 32-Lead Smart Core Z2 x-plate AD7877 0711S PDF

    km44v161

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    Original     		KM44V16004B, KM44V16104B 16Mx4 400mil km44v161 PDF

    KM416V4004C

    Abstract: KM416V4104C
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM416V4004C KM416V4104C 16bit 4Mx16 400mil KM416V4104C PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    Original     		KM44C16004B, KM44C16104B 16Mx4 400mil PDF

    ns3340

    Abstract: No abstract text available
    Text: K4E660811B, K4E640811B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), package type (SOJ or


    Original     		K4E660811B, K4E640811B K4E660811B-JC 400mil ns3340 PDF

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B PDF

    k4e641611c

    Abstract: No abstract text available
    Text: K4E661611C, K4E641611C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this


    Original     		K4E661611C, K4E641611C 16bit 4Mx16 K4E66161 400mil k4e641611c PDF

    Untitled

    Abstract: No abstract text available
    Text: K4F660412C,K4F640412C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power)


    Original     		K4F660412C K4F640412C 16Mx4 400mil PDF

    K4E641611D

    Abstract: K4E661611D
    Text: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this


    Original     		K4E661611D, K4E641611D 16bit 4Mx16 K4E66161 400mil K4E641611D K4E661611D PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM416V4004C KM416V4104C 16bit 4Mx16 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: TERM. NO.’s FOR REF. ONLY .280 REF. [7.11] - A - £i.004[.10] DOT LOCATES TERM. #1 .210 MAX. [5.33] — 370 ±.0 10 [9.40 ±.25] \ 16 1 15 2 14 3 13 4 12 5 11 6 10 7 8 9 .075 REF. [1.91] T .018 — .510 MAX. [12.95] .004 MIN. [.10] X .010 16 [.46 x .25]


    OCR Scan     		000-7196-37R PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LE A D P b -FR E E LF1 S n96% , Ag4% Yes No TERM. NO .’ s FOR REF. ONLY .2 8 0 REF. [7 .1 1 ] - A - £2* ,0 0 4 [.1 0 ] DOT LOCATES TERM. #1 .2 1 0 MAX. [5 . 3 3 ] — 3 7 0 ± .0 1 0 [9 .4 0 ± . 2 5 ] \ 1 .0 7 5 REF.


    OCR Scan     		L60950 CSA60950 E205930 E205930 PDSO-G16 000-7196-37R-LF1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TERM. NO.’s FOR REF. ONLY .280 REF. [7 .1 1 ] - A - £ i.0 0 4 [.1 0 ] DOT LOCATES TERM. #1 .210 MAX. [5 .3 3 ] — 370 ±.01 0 [9 .4 0 ± .2 5 ] \ 16 1 15 2 14 3 13 4 12 5 11 6 10 7 8 9 .075 REF. [1 .9 1 ] T .018 — .510 MAX. [1 2.95 ] .004 MIN. [. 10]


    OCR Scan     		000-7197-37R PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LE A D P b -FR E E S n63% , Pb37% No No S n96% , Ag4% Yes No LF1 TERM. NO.’ s FOR REF. ONLY .2 8 0 REF. [7 . 1 1 ] 1 .0 7 5 REF. [1 .9 1 ] T 16 1 t 15 2 = 14 3 13 4 12 5 11 6 7 9 8 ,0 0 4 [.1 0 ] DOT LOCATES TERM. #1


    OCR Scan     		PDS0-G16 000-6156-30R PDF

    Untitled

    Abstract: No abstract text available
    Text: -A - ^ TERM. NO.’ s FOR REF. ONLY .2 8 0 REF. [ 7 .1 1 ] \ 1 .0 7 5 REF. [ 1 .9 1 ] T 16 1 15 2 14 3 13 4 12 5 11 6 10 7 9 8 TN .3 7 0 ± .0 1 0 [9 .4 0 ± . 2 5 ] -□ .5 1 0 MAX. [ 1 2 .9 5 ] =!=> =•=> 1 CT:1 CT j DOT LOCATES TERM. #1 .2 1 0 MAX.


    OCR Scan     		PDSO-G16 000-5368-30R PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


    OCR Scan     		KM44C4003BS D344bfl PDF

    KM44C4103B

    Abstract: No abstract text available
    Text: KM44C4003B, KM44C4103B CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4-bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


    OCR Scan     		KM44C4003B, KM44C4103B KM44C4103B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003B, KM44C4103B CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


    OCR Scan     		KM44C4003B, KM44C4103B 7Tb4142 0Q23E77 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003BK CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


    OCR Scan     		KM44C4003BK G03444b GD34447 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4005C, KM44C4105C CMOS DRAM 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory celts within the same row, so called Hyper Page Mode. Refresh cycle 2K Ref. or 4K Ref , access


    OCR Scan     		KM44C4005C, KM44C4105C 64ms/32ms PDF

    K and M Electronics

    Abstract: No abstract text available
    Text: KM416V4004C,KM416V4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		KM416V4004C KM416V4104C 16bit 4Mx16 400mil K and M Electronics PDF