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    RECOVERY TIME MOSFET Search Results

    RECOVERY TIME MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RECOVERY TIME MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 300V 10A

    Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
    Text: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits


    Original     		PDF M01N60 O-251 O-252 O-251/252 00A/S mosfet 300V 10A M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V

    Untitled

    Abstract: No abstract text available
    Text: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application


    Original     		PDF LZPF4N60

    100v 20a fast recovery power diode

    Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
    Text: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter


    Original     		PDF LTP40N10 to175 100v 20a fast recovery power diode Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB13N10

    Untitled

    Abstract: No abstract text available
    Text: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application


    Original     		PDF LZPF2N60

    Untitled

    Abstract: No abstract text available
    Text: LZPF7N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application


    Original     		PDF LZPF7N60

    mosfet 600V 20A

    Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
    Text: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits


    Original     		PDF M02N60 O-251 O-252 O-251/252 O-220 00A/S mosfet 600V 20A M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220

    LTP120N06

    Abstract: No abstract text available
    Text: LTP120N06 N-Channel 60V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant


    Original     		PDF LTP120N06 to150 LTP120N06

    Untitled

    Abstract: No abstract text available
    Text: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB30N20 tpv10

    AN569

    Abstract: NTB30N20 NTB30N20T4
    Text: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB30N20 NTB30N20/D AN569 NTB30N20 NTB30N20T4

    Untitled

    Abstract: No abstract text available
    Text: NTB13N10 Advance Information Power MOSFET 13 Amps, 100 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 13 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V Fast Recovery Diode


    Original     		PDF NTB13N10 tpv10 r14525 NTB13N10/D

    Power MOSFET 50V 20A

    Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
    Text: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant


    Original     		PDF LTD35N10 to175 Power MOSFET 50V 20A 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V

    M04N60

    Abstract: No abstract text available
    Text: N Channel MOSFET M04N60 4.0A Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode TO-220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Continuous Drain Current


    Original     		PDF M04N60 O-220 M04N60

    marking n10 fet

    Abstract: NTD12N10
    Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode


    Original     		PDF NTD12N10 marking n10 fet NTD12N10

    Untitled

    Abstract: No abstract text available
    Text: LTP95N07 N-Channel 75V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter BVDSS=75V ,


    Original     		PDF LTP95N07

    35N15

    Abstract: W35N15
    Text: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB35N15 tpv10 35N15 W35N15

    AN569

    Abstract: NTP35N15
    Text: NTP35N15 Preferred Device Advance Information Power MOSFET 37 Amps, 150 Volts N–Channel TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 37 AMPERES 150 VOLTS 50 mΩ @ VGS = 10 V Fast Recovery Diode


    Original     		PDF NTP35N15 tpv10 r14525 NTP35N15/D AN569 NTP35N15

    Untitled

    Abstract: No abstract text available
    Text: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP35N15 O-220 tpv10 NTP35N15/D

    Untitled

    Abstract: No abstract text available
    Text: NTP35N15 Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • 37 AMPERES 150 VOLTS 50 mW @ VGS = 10 V Fast Recovery Diode Avalanche Energy Specified


    Original     		PDF NTP35N15 tpv10 NTP35N15/D

    M02N60B

    Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
    Text: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated


    Original     		PDF M02N60B O-251/252 O-220 O-220-3L M02N60B MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet

    NT6600

    Abstract: nt 6600 G dpak-3 369D NTD6600N NTD6600NT4 NTD6600NT4G
    Text: NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb−Free Package is Available


    Original     		PDF NTD6600N NTD6600N/D NT6600 nt 6600 G dpak-3 369D NTD6600N NTD6600NT4 NTD6600NT4G

    Amp. mosfet 1000 watt

    Abstract: MOSFEt n channel for 26 volt 52 amp AN569 NTB52N10 NTB52N10T4 800mJ
    Text: NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB52N10 NTB52N10/D Amp. mosfet 1000 watt MOSFEt n channel for 26 volt 52 amp AN569 NTB52N10 NTB52N10T4 800mJ

    Untitled

    Abstract: No abstract text available
    Text: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP35N15 O-220 tpv10

    35N15

    Abstract: AN569 NTB35N15 NTB35N15T4 SMD310 rc motor speed control
    Text: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB35N15 tpv10 NTB35N15/D 35N15 AN569 NTB35N15 NTB35N15T4 SMD310 rc motor speed control