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    mitsubishi L200

    Abstract: c14 fet
    Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)


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    PDF RD35HUF2 175MHz, 530MHz, 43Wtyp, 530MHz 45Wtyp, 175MHz mitsubishi L200 c14 fet

    transistor W66

    Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18
    Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)


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    PDF RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz Oct2011 transistor W66 w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18

    177J

    Abstract: MOS 3020 RD35HUF2 w18 transistor
    Text: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON


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    PDF RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz 177J MOS 3020 w18 transistor

    2.2uH inductor radial

    Abstract: RD35H rd45 RD4056
    Text: RADIAL LEADED INDUCTORS •OPERATING TEMP RADIAL INDUCTORS -25 ~ +85˚C Including self-generated heat ■FEATURES • The RD Series inductors are available in 3 from factors range from 35 to 45. • For small current applications ■APPLICATION RADIAL LEADED


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    PDF 2851A) RD35/RD35H 2.2uH inductor radial RD35H rd45 RD4056