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    RCA RF TRANSISTOR Search Results

    RCA RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RCA RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD zener 562

    Abstract: CRCW0603 CRCW1206 D10LR hearing aids CRCW0201 CRCW0805 CRCW1206 vishay
    Text: D… /C R CW/ R CA RCWP w w w. v i s h a y. c o m For technical questions, contact ff2aresistors@vishay.com Asia and Americas , ff1resistors@vishay.com (Europe) S e l ector G uide thick film chip resistors resistive products V I S H A Y I N T E R T E C HN O L O G Y , I N C .


    Original     		PDF Tol4-9337-2920 VMN-SG2020-0603 SMD zener 562 CRCW0603 CRCW1206 D10LR hearing aids CRCW0201 CRCW0805 CRCW1206 vishay

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    Inselek

    Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
    Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.


    Original     		PDF

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


    OCR Scan     		PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


    OCR Scan     		PDF 2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE

    RCA-2N5179

    Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
    Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as


    OCR Scan     		PDF 2N5179 RCA-2N5179* 2N5179 TA7319. 482mm) RCA-2N5179 2n5179 equivalent TA7319 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor

    Narda 904N

    Abstract: transistor et 455 sealectro 2N5470 equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
    Text: File No. 350 RF P o w e r T r a n s is to rs Solid State Division 2N5470 RCA-2N5470* is an epitaxial silicon n-p-n planar transistor employing the overlay emitter-electrode con­ struction. It is intended for solid-state microwave radiosonde, communications, and S-band telemetry


    OCR Scan     		PDF 2N5470 RCA-2N5470* 2N5470 2N5470, AN3764, 16-Detail Narda 904N transistor et 455 sealectro equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N

    RCA-40967

    Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
    Text: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E


    OCR Scan     		PDF 470-MHz RCA-40967 TA8562 TA8563, VOLTAGE115 40967 40968 ATC100 596 transistor 2575A rca 832

    2N1491

    Abstract: 2N1492 2N1493 2N1491-2N1493
    Text: File No. 10 RF P o w e r T r a n s is to r s 2N1491 Solid State Division 9N14.Q9 2N1493 RCA-2N1491, 2N1492, and 2N1493 are triple-diffused transistors of the silicon n-p-n type. These transistors are intended for a wide variety of appli­ cations in industrial and military electronic equipment. They are particu­


    OCR Scan     		PDF 2N1491 2N1492 2N1493 RCA-2N1491, 2N1492, 2N1493 2N1491 2N1492 92CS-I22B9RI 2N1491-2N1493

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


    OCR Scan     		PDF 2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


    OCR Scan     		PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    philco transistors

    Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
    Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.


    OCR Scan     		PDF 2N252 2N309 2N140 521-6T2 528-6T2 002DIA SR200 SR500 philco transistors DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    3SK88

    Abstract: transistor 3SK88 transistor T2S dual-gate
    Text: NEC M O S FIELD E F F E C T T R A N S I S T O R ELECTRON DEVICE 3SK88 RF A M P . FOR UHF T V TUNER N-CHANNEL SILICON DUAL-GATE M O S FIELD-EFFECT TRANSISTOR DISK MOLD FEATURES P A C K A G E D IM E N S IO N S Un.t : mm • Suitable tor use as R F am plifier in U H F T V tuner.


    OCR Scan     		PDF 3SK88 Vos-10 VGts-t10 vG15-o lo-10mA. f-900 3SK88 transistor 3SK88 transistor T2S dual-gate

    rca 40290

    Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
    Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry


    OCR Scan     		PDF to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012

    transistor 3l2

    Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
    Text: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft


    OCR Scan     		PDF 2N5994 transistor 3l2 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    MFE201

    Abstract: S3H58 MFE201 application notes MFE202 MFE203 dual-gate
    Text: 3 S 2 - 5VZ- N-CHANNEL DUAL-GATE SIUCON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS MFE201 thru MFE203 . . d e p le tio n m o d e dual g a te tra n s is to rs d e s ig n e d fo r VHF a m p lifie r and m ix e r a p p lic a tio n s • MFE201 — VHF A m p lifie r


    OCR Scan     		PDF MFE201 MFE202 MFE203 MFE201. MFE202 MFE201 S3H58 MFE201 application notes MFE203 dual-gate

    RFL1N08

    Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
    Text: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352

    1415 Allen bradley

    Abstract: ta8750 microstripline 92CS-21568 2N6391 RCA2005 HF-46 HF46 SMFBA1
    Text: File No. 627 RF P o w e r T r a n s is to r s Solid State Division RCA2005 2N6391 5-W, 2-GHz, Em itter-Ballasted Silicon N-P-N Overlay Transistors Fo r Use in Microwave Power A m plifiers, Fundamental-Frequency Oscillators, and Frequency M ultipliers Features:


    OCR Scan     		PDF RCA2005 2N6391 HF-46 HF-46 2N6391* 1415 Allen bradley ta8750 microstripline 92CS-21568 2N6391 HF46 SMFBA1

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


    OCR Scan     		PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram

    CA3031

    Abstract: CA3005 or CA3006 inverted welding machine schematic diagram .1microfarad capacitor transistor bf 175 RCA Transistors CA3034V1 RCA transistor CA3005 CA3004
    Text: This Manual, like its preceding edition, has been prepared to provide an understanding of the basic princi­ ples involved in the design and application of linear integrated circuits. It may be used as a guide by circuit and systems designers in determining optimum design


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    2N6105

    Abstract: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 2N6104 RCA 431 transistor
    Text: File No. 504 RF Power Transistors Solid State Division 2N6104 2N6105 30-W 4 0 0 - MHz Broadband E m itte r-B a lla s te d Silicon N -P -N O verlay Transistors 2N 6105 J E D E C T O -2 1 6 A A Features: • ■ ■ ■ ■ 5-dB gain min. at 400 MHz with 30 watts (min.) output


    OCR Scan     		PDF 2N6104 2N6105 400-MHz 2N6105) 2N6104) 2N6104 2N6105 2N6105: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 RCA 431 transistor