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    RCA POWER TRANSISTORS Search Results

    RCA POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RCA POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


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    PDF

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


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    PDF 2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 57E I> • 4302271 G G 2 G 4 eì2 ^ ■ HAS Power T ran sisto RCA 1000, RCA1001 File Number 594 T-33'-2cC 8-A m pere Silicon N -P -N Darlington Pow er Transistors


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    PDF RCA1001 RCA1000, 00204T4 CS-IW44AI

    transistor tl 188

    Abstract: 92CS-27516
    Text: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor


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    PDF BUX11A 92CS-27516 O-204AA RCA-BUX11A O-204AA 92CS-3227I transistor tl 188 92CS-27516

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE


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    PDF FRK9460D -500V O-204AE

    723ct

    Abstract: A723E CI CA723 CA723CE CA723 harris intersil
    Text: Power Control Circuits HARRIS S E M I C O N D U C T O R HARRIS RCA - GE CA723, CA723C INTERSIL May 1990 Voltage Regulators For Regulated Output Voltage Adjustable from 2 V to 37 V at Output Currents up to 150 mA without External Pass Transistors Features:


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    PDF CA723, CA723C CA723 723ct A723E CI CA723 CA723CE harris intersil

    C04-013

    Abstract: 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013
    Text: Application Notes Power Consumption in QMOS Logic Circuits by R. Funk and B. Heinze QMOS, RCA’s high-speed CMOS-logic technology, offers users the best features of both CMOS and TTL tech nolog ies: the low-power consumption of CMOS and the fast speeds associated with LSTTL. This Application Note focuses on


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    PDF SSD-290. C04-013 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013

    BDY58R

    Abstract: RCA-BDY58R
    Text: BDY58R File Number Silicon N-P-N Switching Transistors 1206 TERM INAL DESIGNATIONS c E FLANGE! For Switching Applications in Industrial and Commercial Equipment Features: • VCE0 - 160V • lc — 25 A ■ P T — 175 W JEDEC TO-204AA The RCA-BDY58R is a silicon n-p-n power transistor featur­


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    PDF BDY58R O-204AA RCA-BDY58R O-204AA S-31456 BDY58R

    CA3102E

    Abstract: CA3049T RCA CA3049T ca3049
    Text: D ifferential Am plifiers HARRIS S E M I C O N D U C T O R HARRIS RCA GE - CA3049, CA3102 INTERSIL May 1990 Dual High-Frequency Differential Amplifiers For Low-Power Applications at Frequencies up to 5 0 0 MHz Features: Applications: • Power Gain 23 dB typ. at 200 MHz


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    PDF CA3049, CA3102 CA3102E CA3049T RCA CA3049T ca3049

    RCA-40967

    Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
    Text: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E


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    PDF 470-MHz RCA-40967 TA8562 TA8563, VOLTAGE115 40967 40968 ATC100 596 transistor 2575A rca 832

    IRF640R

    Abstract: IRF641R free energy transis Harris MOSFET N-CHANNEL nh
    Text: HARRIS SEMICOND SECTOR IbE D • H3DSS71 D01S4Ö2 3 ■ fSi HARRIS Power MOSFETs S E M I C O N D U C T O R HARRI S RCA GE T-3^/3 I NTERSI L IRF640R, IRF641R IRF642R, IRF643R Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V, 150V rDs on = 0 .1 8 0 and 0.22fi


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    PDF H3DSS71 D01S4 IRF640R, IRF641R IRF642R, IRF643R O-220AB IRF641R, IRF642R IRF640R free energy transis Harris MOSFET N-CHANNEL nh

    2N3839

    Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
    Text: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the


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    PDF 2N3839 RCA-2N3839* 2N3839 2N2857, 2N2857 2n3839 rca VHF transistor amplifier circuit

    equivalent M 393

    Abstract: No abstract text available
    Text: HARRIS V p 11 SEMCONt SECTOR 4DE D m 2N7285R, 2N7285H HARRIS S E M I C O N D U C T O R RCA H AR RIS GE MB02271 DD337b2 0 EiHAS REGISTRATION PENDING Available As FRM240R, FRM240H IN T E R S IL 3 16A,200V RDS(on =0.24n Radiation-Hardened N-Channel Power MOSFETs


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    PDF MB02271 DD337b2 2N7285R, 2N7285H FRM240R, FRM240H equivalent M 393

    Rad hard MOSFETS in Harris

    Abstract: No abstract text available
    Text: HARRIS 1 a H A R R IS 1 SEIHCOND SECTOR H A R R IS GE D I 4305571 0033744 OBJECTIVE S E M I C O N D U C T O R RCA MDE TBHAS FRF9450D 5 A ,-5 0 0 V RDS on =1,82 a IN T E R SIL This Objective Data Sheet Represents the Proposed Device Performance, Radiation-Hardened P-Channel Power MOSFETs


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    PDF FRF9450D F9450D Rad hard MOSFETS in Harris

    Untitled

    Abstract: No abstract text available
    Text: H A R R I S SEfllCOND S E C T O R £ *? H A R R I S U U HARRIS RCA GE MOE D • 4 3 0 2 27 1 0 0 3 3 7 3 a 3 B HAS OBJECTIVE FRS9440D - H " '! RDS on =4.22n 2 .5 A .-S 0 0 V INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power M O SFETs


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    PDF FRS9440D FRS9440D 10Krads 12nAper

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


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    PDF 2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666

    ca3055

    Abstract: CA3085BS CA3085 ca308s CA3085 diagram equivalent transistor c 243
    Text: Power Control Circuits f f H A R R IS S E M H A R R IS I C RCA O N D GE U • C T O R CA 30 85 , CA 3085A , C A 3085B IN T E R S IL May 1990 Positive Voltage Regulators F e a tu re s: A p p lic a tio n s: • Up to 100 mA output current • Input and output short-circuit protection


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    PDF 3085B LM100 21--Combination IN176 2N532? ca3055 CA3085BS CA3085 ca308s CA3085 diagram equivalent transistor c 243

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


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    PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    philco transistors

    Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
    Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.


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    PDF 2N252 2N309 2N140 521-6T2 528-6T2 002DIA SR200 SR500 philco transistors DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    RCA 2N3055 transistor

    Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
    Text: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A


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    PDF 2N2102] L2N4036J 2N1482 2N5321 2N5323 2N6179 2N6181 2N3054 2N5955 2N5497 RCA 2N3055 transistor 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor

    12n08

    Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
    Text: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


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    PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92CS-3374I RFM12N08 RFM12N10 RFP1I2N08 RFM12N18, 12n08 rca application notes pt 4115 TA9284 AN7260 AN7254 RFP12N08

    RCA9229D

    Abstract: RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C
    Text: 3875081 G E SOLID SfÄTE 01E 17323 D Darlington Power Transistors File Number 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A C om plem entary High Current,


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    PDF RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D T0-204AE RCA-9228 RCA9229D RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C