Untitled
Abstract: No abstract text available
Text: 643+. 97:70?@=3 6756 <;A3= 80?167:5 =380B 4GDSTQGR | 9<B3 ;7B lpbm\abg` \ZiZ[bebmr | KZm\abg` k^eZr | LZgnZe lpbm\a _ng\mbhg ZoZbeZ[e^ | Dk^^iZ`^ ]blmZg\^A ?ff | Eb^e^\mkb\ lmk^g`maA fhk^ maZg ;dU 0[^mp^^g \hbe Zg] \hgmZ\ml1 | Fgobkhgf^gmZe _kb^g]er ikh]n\m 0QhIR \hfiebZgm1
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Untitled
Abstract: No abstract text available
Text: R1Q2A4436RBG / R1Q2A4418RBG Series Preliminary R1Q2A4436RBG Series R1Q2A4418RBG Series R1Q2A4409RBG Series R10DS0186EJ0011 144-Mbit QDR II SRAM 2-word Burst Preliminary Rev. 0.11b 2012.06.05 Description The R1Q2A4436 is a 4,194,304-word by 36-bit and the R1Q2A4418 is a 8,388,608-word by 18-bit synchronous
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R1Q2A4436RBG
R1Q2A4418RBG
R1Q2A4409RBG
R10DS0186EJ0011
144-Mbit
R1Q2A4436
304-word
36-bit
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Untitled
Abstract: No abstract text available
Text: R1QNA44*RBG / R1QPA44*RBG Series Preliminary R1QxA4436RBG / R1QxA4418RBG / R1QxA4409RBG R1QxA4436RBG / R1QxA4418RBG / R1QxA4409RBG R1QNA4436RBG / R1QNA4418RBG / R1QNA4409RBG R1QPA4436RBG / R1QPA4418RBG / R1QPA4409RBG R10DS0191EJ0011 Preliminary Rev. 0.11b
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R1QNA44*
R1QPA44*
R1QxA4436RBG
R1QxA4418RBG
R1QxA4409RBG
R1QNA4436RBG
R1QNA4418RBG
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9p marking
Abstract: No abstract text available
Text: 44QM2 R1Q3A4436RBG / R1Q3A4418RBG Series Preliminary R1Q3A4436RBG Series R1Q3A4418RBG Series R1Q3A4409RBG Series R10DS0187EJ0011 144-Mbit QDR II SRAM 4-word Burst Preliminary Rev. 0.11b 2012.06.05 Description The R1Q3A4436 is a 4,194,304-word by 36-bit and the R1Q3A4418 is a 8,388,608-word by 18-bit synchronous
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44QM2
R1Q3A4436RBG
R1Q3A4418RBG
R1Q3A4409RBG
R10DS0187EJ0011
144-Mbit
R1Q3A4436
304-word
9p marking
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Untitled
Abstract: No abstract text available
Text: R1QBA44*RBG / R1QEA44*RBG Series Preliminary R1QBA4436RBG / R1QBA4418RBG / R1QBA4409RBG R1QEA4436RBG / R1QEA4418RBG / R1QEA4409RBG R1QHA4436RBG / R1QHA4418RBG / R1QHA4409RBG R1QLA4436RBG / R1QLA4418RBG / R1QLA4409RBG R10DS0189EJ0011 Preliminary Rev. 0.11b
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R1QBA44*
R1QEA44*
R1QBA4436RBG
R1QBA4418RBG
R1QBA4409RBG
R1QEA4436RBG
R1QEA4418RBG
R1QEA4409RBG
R1QHA4436RBG
R1QHA4418RBG
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Untitled
Abstract: No abstract text available
Text: R1Q4A4436RBG / R1Q4A4418RBG Series Preliminary R1Q4A4436RBG Series R1Q4A4418RBG Series R1Q4A4409RBG Series R10DS0188EJ0011 144-Mbit DDRII SRAM 2-word Burst Preliminary Rev. 0.11b 2012.06.05 Description The R1Q4A4436 is a 4,194,304-word by 36-bit and the R1Q4A4418 is a 8,388,608-word by 18-bit synchronous
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R1Q4A4436RBG
R1Q4A4418RBG
R1Q4A4409RBG
R10DS0188EJ0011
144-Mbit
R1Q4A4436
304-word
36-bit
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A4418
Abstract: No abstract text available
Text: R1QHA44*RBG / R1QLA44*RBG Series Preliminary R1QBA4436RBG / R1QBA4418RBG / R1QBA4409RBG R1QEA4436RBG / R1QEA4418RBG / R1QEA4409RBG R1QHA4436RBG / R1QHA4418RBG / R1QHA4409RBG R1QLA4436RBG / R1QLA4418RBG / R1QLA4409RBG R10DS0190EJ0011 Preliminary Rev. 0.11b
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R1QHA44*
R1QLA44*
R1QBA4436RBG
R1QBA4418RBG
R1QBA4409RBG
R1QEA4436RBG
R1QEA4418RBG
R1QEA4409RBG
R1QHA4436RBG
R1QHA4418RBG
A4418
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EZ 648
Abstract: ez 748 EZ 649 A56A ez 948
Text: 97E1 3DC?=?C:E6 A6<3G 7LIVWTLU ~ 96A lpbm\abg` \ZiZ[bebmr ~ Af[b^gm m^fi4 kZg`^ ni mh 78; ~ 7 Fhkf A / 7 Fhkf C \hgmZ\m ZkkZg`^f^gm ~ VZla mb`am Zg] ]nlm ikhm^\m^] mri^l ZoZbeZ[e^ CZSNJIO 3SSONJIVNRQU ~ QhHR / EKU \hfiebZgm Kb`ambg` \hgmkhe2 H^Z]eb`am \hgmkhe2 Ee^\mkhfZ`g^m \hgmkhe
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hpl12
493A34C6A
EZ 648
ez 748
EZ 649
A56A
ez 948
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RBG BG 09
Abstract: 38A3 ez 948 A56A EZ 648
Text: 97E1 3DC?=?C:E6 A6<3G 7LIVWTLU ~ 96A lpbm\abg` \ZiZ[bebmr ~ Af[b^gm m^fi4 kZg`^ ni mh 78; ~ 7 Fhkf A / 7 Fhkf C \hgmZ\m ZkkZg`^f^gm ~ OeZlmb\ l^Ze^] Zg] ]nlm ikhm^\m^] mri^l ZoZbeZ[e^ CZSNJIO 3SSONJIVNRQU ~ QhHR / EKU \hfiebZgm Kb`ambg` \hgmkhe2 H^Z]eb`am \hgmkhe2 Ee^\mkhfZ`g^m \hgmkhe
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hpl12
493A34C6A
RBG BG 09
38A3
ez 948
A56A
EZ 648
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annunciator
Abstract: 2000s DPM 50 dpm 116 DPM 2000
Text: DPM 2000 3½ Digit LCD Module The DPM 2000 uses advanced components and construction techniques to provide an unrivalled combination of high performance, elegant appearance and low cost. The module uses a bandgap reference for extra temperature stability. For single rail operation, the
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2000S
200mV
200mV
August/2002
4-20mA
annunciator
DPM 50
dpm 116
DPM 2000
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4 digit lcd 4-20mA input
Abstract: 4-20ma current source DPM 2000 Isolated 4-20ma ph meter circuit annunciator pH meter 4-20mA d 434 dpm2000
Text: DPM 2000 3½ Digit LCD Module The DPM 2000 uses advanced components and construction techniques to provide an unrivalled combination of high performance, elegant appearance and low cost. The module uses a bandgap reference for extra temperature stability. For single rail operation, the
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2000S
200mV
200mV
August/1997
4-20mA
4 digit lcd 4-20mA input
4-20ma current source
DPM 2000
Isolated 4-20ma
ph meter circuit
annunciator
pH meter
d 434
dpm2000
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Untitled
Abstract: No abstract text available
Text: DPM 2000 3½ Digit LCD Module The DPM 2000 uses advanced components and construction techniques to provide an unrivalled combination of high performance, elegant appearance and low cost. The module uses a bandgap reference for extra temperature stability. For single rail operation, the
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2000S
200mV
August/1997
4-20mA
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DPM 2000
Abstract: dpm2000 200S 3.5 digit dpm DPM200 DPM2000S
Text: DIMENSIONS ABMESSUNGEN All dimensions in mm inches Panel cut-out 68 x 33 (2.68 x 1.30) Alle Abmessungen in mm (Zoll) Einbauausschnitt 68 x 33 (2,68 x 1,30) PANEL FITTING EINBAUHINWEISE Fit the bezel to the front of the panel and then locate the meter into the bezel from behind. Alternatively the
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DPM 2000
Abstract: 200S dpm2000 3.5 digit dpm dpm 116 dpm200
Text: DIMENSIONS ABMESSUNGEN All dimensions in mm inches Panel cut-out 68 x 33 (2.68 x 1.30) Alle Abmessungen in mm (Zoll) Einbauausschnitt 68 x 33 (2,68 x 1,30) PANEL FITTING EINBAUHINWEISE Fit the bezel to the front of the panel and then locate the meter into the bezel from behind. Alternatively the
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transistor b616
Abstract: HP10 M35076-001SP M35076-XXXSP 02A16
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M35076-XXXSP
transistor b616
HP10
M35076-001SP
02A16
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Untitled
Abstract: No abstract text available
Text: PSG5220 DATA SHEET Dual-Channel Advanced Power Management IC with On-Demand Power 1 Features 2 Description Configurable On-Demand Power® algorithm to adaptively scale regulated output voltage in correlation with monitored system activity System sensory interfaces to monitor activity and demand
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PSG5220
FDS6982AS
XPL7030
XPL7030-332ML_
R10-R11
RC0402FR-0710KL
UMK107BJ105KA-T
GMK325BJ106KN
C1608X5R0J475K
C16-C17,
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Nec b616
Abstract: nec 6B16 M35076-XXXSP HP10 M35076-001SP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M35076-XXXSP
Nec b616
nec 6B16
HP10
M35076-001SP
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Untitled
Abstract: No abstract text available
Text: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and future DDRX lower voltage standards. The LTC3876 includes VDDQ and VTT
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LTC3876
LTC3876
PowLTC3838
QFN-38,
TSSOP-38E
LTC3634
QFN-28,
TSSOP-28E
LTC3617
QFN-24
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DEMO Interleaved boost converter
Abstract: 0009m BSC010NE2LS LTC3876FE
Text: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n Complete DDR Power Solution with VTT Reference Wide VIN Range: 4.5V to 38V, VDDQ: 1V to 2.5V ±0.67% VDDQ Output Voltage Accuracy
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LTC3876
200kHz
38-Pin
QFN-20,
TSSOP-20E
LTC3838
QFN-38,
TSSOP-38E
LTC3634
QFN-28,
DEMO Interleaved boost converter
0009m
BSC010NE2LS
LTC3876FE
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RF3833
Abstract: 4TPE220MFC2 BSC035N04LS 25SVPD82M LTC3833 LTC3833EUDC SUNCON capacitor SUNCon me LTC3833E LTC3833EFE
Text: LTC3833 Fast Accurate Step-Down DC/DC Controller with Differential Output Sensing DESCRIPTION FEATURES Wide VIN Range: 4.5V to 38V n V OUT Range: 0.6V to 5.5V n Output Accuracy: ±0.25% at 25°C and ±0.67% over Temperature n Differential Output Sensing Allowing Up to 500mV
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LTC3833
500mV
200kHz
20-Pin
250kHz
770kHz,
LTC3850/LTC3850-1
780kHz,
QFN-28,
RF3833
4TPE220MFC2
BSC035N04LS
25SVPD82M
LTC3833
LTC3833EUDC
SUNCON capacitor
SUNCon me
LTC3833E
LTC3833EFE
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ECU car
Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,
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R1LV0816ASD
16bit
REJ03C0397-0001
288-words
16-bit,
52pin
R1WV6416R
ECU car
52-pin TSOP
M5M5V108DVP-70HI
r1lv0808
m5m5v108dkv
M5M5V216ATP-70HI
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R1LV1616
Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0816ABG
16bit)
REJ03C0393-0100
288-words
16-bit,
48balls
R1WV6416R
R1LV1616
ECU car
R1LV0816A
R1LV08
HM62V8100
r1lp0408c
m5m5v208akv
R1LV0808ASB-5SI
M5M5256DVP-70LL
M5M5W817
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CY3600
Abstract: No abstract text available
Text: fax id: 6149 SS i^K JS f r i s a l i i J F ; U FTV fST “ ¿ N &*• I F l m c b PRELIMINARY Ultra37256V t i UltraLogic 256-Macrocell 3.3V ISR™ CPLD Features • Up to 192 1/Os — plus 5 d ed icated inp u ts including 4 clo ck inputs • 256 m a cro c ells in six te en logic blocks
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Ultra37256V
256-Macrocell
IEEE1149
CY3600
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Untitled
Abstract: No abstract text available
Text: HC-5504B HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit January 1997 Description Features The Harris SLIC incorporates many of the B O R SH T functions on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is
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HC-5504B
HC-5504
1-800-4-HARRIS
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