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    R1LV1616 Search Results

    R1LV1616 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV1616HBG-4SI#B0 Renesas Electronics Corporation Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit) Visit Renesas Electronics Corporation
    R1LV1616RSD-7SI#S0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Embossed Tape Visit Renesas Electronics Corporation
    R1LV1616RSA-7SR#S0 Renesas Electronics Corporation Low Power SRAM, TSOP(1), /Embossed Tape Visit Renesas Electronics Corporation
    R1LV1616RSD-7SI#B0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Tray Visit Renesas Electronics Corporation
    R1LV1616RSD-5SI#S0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Embossed Tape Visit Renesas Electronics Corporation
    R1LV1616HBG-5SI#B0 Renesas Electronics Corporation Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit) Visit Renesas Electronics Corporation
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    R1LV1616 Price and Stock

    Rochester Electronics LLC R1LV1616RBG-7SR#B0

    IC SRAM 16MBIT PARALLEL 48TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1LV1616RBG-7SR#B0 Tray 364 9
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    Renesas Electronics Corporation R1LV1616HSA-4SI#S1

    IC SRAM 16MBIT PARALLEL 48TSOP I
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    DigiKey R1LV1616HSA-4SI#S1 Reel 1,000
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    Renesas Electronics Corporation R1LV1616RSA-7SI#S0

    IC SRAM 16MBIT PARALLEL 48TSOP I
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    DigiKey R1LV1616RSA-7SI#S0 Reel 1,000
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    Renesas Electronics Corporation R1LV1616RBG-7SR#S0

    IC SRAM 16MBIT PARALLEL 48TFBGA
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    Renesas Electronics Corporation R1LV1616RSA-5SI#B0

    IC SRAM 16MBIT PARALLEL 48TSOP I
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    R1LV1616 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Type PDF
    R1LV1616HBG-4SI Renesas Technology Wide Temperature Range Version 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616HBG-5SI Renesas Technology Wide Temperature Range Version 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616HBG-5SI#B0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 50NS 48FBGA Original PDF
    R1LV1616HBG-I Renesas Technology Wide Temperature Range Version 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616HBG-I Series Renesas Technology Wide Temperature Range Version 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616H-I Series Renesas Technology Wide Temperature Range Version 16 M SRAM (1-Mword x 16-bit / 2-Mword x 8-bit) Original PDF
    R1LV1616HSA-4LI Renesas Technology 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616HSA-4SI Renesas Technology 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616HSA-5SI Renesas Technology 16 M SRAM (1-Mword x 16-bit) Original PDF
    R1LV1616R Renesas Technology 16Mb Advanced LPSRAM (1M wordx16-Bit / 2M wordx8-Bit) Original PDF
    R1LV1616RBA-5SI Renesas Technology 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) Original PDF
    R1LV1616RBG-5S Renesas Technology 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) Original PDF
    R1LV1616RBG-5SI Renesas Technology Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48) Original PDF
    R1LV1616RBG-5SI Renesas Technology 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) Original PDF
    R1LV1616RBG-5SI#B0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48FBGA Original PDF
    R1LV1616RBG-5SI#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48FBGA Original PDF
    R1LV1616RBG-5SR Renesas Technology 16Mb Advanced LPSRAM (1M wordx16-Bit / 2M wordx8-Bit) Original PDF
    R1LV1616RBG-7SI Renesas Technology 16Mb superSRAM (1M wordx16-Bit) Original PDF
    R1LV1616RBG-7SI#B0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 70NS 48FBGA Original PDF
    R1LV1616RBG-7SI#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 70NS 48FBGA Original PDF

    R1LV1616 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RENESAS tft application notes

    Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616R wordx16bit REJ03C0101-0300Z 16-Mbit 1048576-words 16-bit, 52pin RENESAS tft application notes R1LV1616RBG-5S R1LV1616RSA-5S uTSOP

    Untitled

    Abstract: No abstract text available
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin

    R1LV1616HSA-4SI

    Abstract: A17A R1LV1616HSA-5SI R1LV1616HSA-4LI
    Text: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0195-0100Z Rev. 1.00 Apr.22.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		PDF R1LV1616H-I 16-bit) REJ03C0195-0100Z 16-Mbit 16-bit. 48-pin R1LV1616HSA-4SI A17A R1LV1616HSA-5SI R1LV1616HSA-4LI

    0.4mm pitch BGA

    Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin 0.4mm pitch BGA 52-pin uTSOP din 6887 R1LV1616RBG-5S R1LV1616RSA-5S

    52PTG

    Abstract: R1LV1616R R1LV1616R Series uTSOP
    Text: R1LV1616R Series REJ03C0101-0100Z Rev.1.00 2004.04.13 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616R REJ03C0101-0100Z wordx16bit) 16-Mbit 1048576-words 16-bit, 52pin 52PTG R1LV1616R Series uTSOP

    R1LV1616HBG-4SI

    Abstract: R1LV1616HBG-5SI R1LV1616HBG-I
    Text: R1LV1616HBG-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0263-0100 Rev.1.00 Sep.21.2005 Description The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup


    Original     		PDF R1LV1616HBG-I 16-bit) REJ03C0263-0100 16-Mbit 16-bit. 48-ball R1LV1616HBG-4SI R1LV1616HBG-5SI

    A17a

    Abstract: R1LV1616HSA-4SI R1LV1616HSA-4LI R1LV1616HSA-5SI REJ03C0195-0101
    Text: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit / 2-Mword × 8-bit REJ03C0195-0101 Rev.1.01 Nov.18.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by


    Original     		PDF R1LV1616H-I 16-bit REJ03C0195-0101 16-Mbit 48-pin Comple-900 Unit2607 A17a R1LV1616HSA-4SI R1LV1616HSA-4LI R1LV1616HSA-5SI REJ03C0195-0101

    R1LV1616RBA-5SI

    Abstract: R1LV1616R R1LV1616RBA uTSOP
    Text: R1LV1616RBA-5SI 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0340-0001 Rev.0.01 2007.10.31 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616RBA-5SI wordx16bit REJ03C0340-0001 R1LV1616R 16-Mbit 1048576-words 16-bit, R1LV1616RBA 48balls R1LV1616RBA-5SI uTSOP

    52-pin uTSOP

    Abstract: 52-pin TSOP
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0201Z Rev.2.01 2005.03.22 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616R wordx16bit REJ03C0101-0201Z 16-Mbit 1048576-words 16-bit, 52pin 52-pin uTSOP 52-pin TSOP

    Untitled

    Abstract: No abstract text available
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary This product is under development and its specification might be changed without any notice. R1LV1616R Series REJ03C0101-0002Z Rev.0.02 2003.10.24 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,


    Original     		PDF R1LV1616R wordx16bit) REJ03C0101-0002Z 16-Mbit 1048576-words 16-bit, 52pin

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF do-900 Unit2607

    R1LV1616R

    Abstract: R1LV1616RBG-5S R1LV1616RSA-5S R1LV1616R Series R1LV1616
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    A18E

    Abstract: R1LV1616RSD-7SR FDC000 R1LV
    Text: APPLICATION NOTE H8SX Family Access to the External Address Space in Single-chip Mode Introduction Register setting etc. are required for the H8SX MCU to use the external address space in single-chip mode. This sample application describes access to SRAM that is connected in the external address space when the MCU has


    Original     		PDF H8SX/1663 REJ06B0770-0100/Rev A18E R1LV1616RSD-7SR FDC000 R1LV

    HM2V8100TTI5SE

    Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
    Text: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns


    Original     		PDF TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    K4S641632K-UC75

    Abstract: h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Cluster Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in cluster transfer mode.


    Original     		PDF H8SX/1668R H8SX/166products REJ06B0694-0100/Rev K4S641632K-UC75 h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0

    h8sx

    Abstract: R1LV1616RSD-7SR K4S641632K-UC75
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Repeat Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in repeat transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668R REJ06B0693-0100/Rev h8sx R1LV1616RSD-7SR K4S641632K-UC75

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


    Original     		PDF AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    CY62148E

    Abstract: R1LP0108ESA-7SR
    Text: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.


    Original     		PDF R1WV6416RSD-5SI R1WV6416RSD-7SI HM6216514LTTI-5SL R10PF0003ED0700 CY62148E R1LP0108ESA-7SR

    RILP0108ESP-xSR

    Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
    Text: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.


    Original     		PDF R1WV6416R RILP0108ESP-xSR RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D

    R1LV1616R

    Abstract: R1LV1616RBA R1LV1616RBA-5SI
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF