msc 1697
Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300
Text: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction
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DSP56302/D
DSP56302
24-BIT
DSP56302
DSP56300
msc 1697
el 198
Response AA0482
mz 1540 switching supply
pcr 606 r
hasp bb a
Nippon capacitors
TRANSISTOR MOTOROLA MAC 223
WL 431
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STK12C68
Abstract: STK15C68 STK16C68
Text: STK15C68 8K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Deisgns FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 8K x 8 Static RAM, BatteryBacked RAM or EEPROM
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STK15C68
200ns
100-Year
28-Pin
ML0009
STK15C68
Sn/15
STK12C68
STK16C68
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trc 9500
Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C EDI8F8513C
Text: EDI8F8513C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static
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EDI8F8513C
512Kx8
EDI8F8513C
4096K
128Kx8
the128Kx8
EDI8F8513B20M6C
trc 9500
EDI8F8513B20M6C
EDI8F8513B25M6C
EDI8F8513B35M6C
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K7Z327285M
Abstract: No abstract text available
Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM
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K7Z327285M
512Kx72
512Kx72
11x19
00x10
00x18
K7Z327285M
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7MMV4101
Abstract: IDT71V124 IDT7MMV4101 4083
Text: PRELIMINARY IDT7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
IDT71V124
4083
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IDT71V124
Abstract: IDT7MMV4101
Text: PRELIMINARY IDT7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
IDT71V124
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4083
Abstract: IDT71V124 IDT7MMV4101
Text: PRELIMINARY IDT7MMV4101 128K x 24 THREE MEGABIT 3.3V CMOS STATIC RAM FEATURES: DESCRIPTION: • High density 3 megabit 3.3V static RAM • Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array • Fast RAM access times: 10,12,15ns • Single 3.3V power supply
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
4083
IDT71V124
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S29AL
Abstract: S71AL016D S71AL016D02-BF S71AL016D02-T7 S71AL016D02-TF
Text: S71AL016D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only Flash Memory and 2 Megabit (128K x 16-bit) Static RAM/ Pseudo Static RAM ADVANCE INFORMATION Distinctive Characteristics MCP Features
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S71AL016D
16-bit)
S71AL
S29AL
S71AL016is
S71AL016D02-BF
S71AL016D02-T7
S71AL016D02-TF
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1Mx8 bit Low Power CMOS Static RAM
Abstract: No abstract text available
Text: EDI8F81025C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION n 1Mx8 bit CMOS Static RAM The EDI8F81025C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Access Times 70 through 100ns
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EDI8F81025C
100ns
EDI8F81025LP)
EDI8F81025C
512Kx8
EDI8F81025C70B6C
EDI8F81025C85B6C
1Mx8 bit Low Power CMOS Static RAM
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Untitled
Abstract: No abstract text available
Text: CY7C1041CV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C The CY7C1041CV33 is a high performance CMOS static RAM organized as 262,144 words by 16 bits.
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CY7C1041CV33
CY7C1041CV33
CY7C1041BV33
I/O15)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM63Z836/D SEMICONDUCTOR TECHNICAL DATA Product Preview Freescale Semiconductor, Inc. 256K x 36 and 512K x 18 Bit ZBTr Fast Static RAM MCM63Z836 MCM63Z918 The ZBT RAM is an 8M–bit synchronous fast static RAM designed to provide
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MCM63Z836/D
MCM63Z836
MCM63Z918
MCM63Z836â
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TC59SM816
Abstract: TSOPII54 04CFT
Text: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM816/08/04CFT/CFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816CFT/CFTL
TC59SM808CFT/CFTL
TC59SM804CFT/CFTL
TC59SM816
TSOPII54
04CFT
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TC59SM816
Abstract: No abstract text available
Text: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM816/08/04CFT/CFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816CFT/CFTL
TC59SM808CFT/CFTL
TC59SM804CFT/CFTL
TC59SM816
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IDT71V124
Abstract: IDT7MMV4101
Text: PRELIMINARY IDT7MMV4101 128K x 24 Three Megabit 3.3V CMOS Static RAM Features ◆ Description High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA Ball Grid Array Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity
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IDT7MMV4101
IDT7MMV4101
IDT71V124)
7MMV4101
x4033
IDT71V124
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Untitled
Abstract: No abstract text available
Text: FM25L04B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes
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FM25L04B
121-year
FM25L04B
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Untitled
Abstract: No abstract text available
Text: FM25V02 256-Kbit 32 K x 8 Serial (SPI) F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM25V02
256-Kbit
256-Kbit
151-year
FM25V02
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ST7565
Abstract: LCD Controller ST7567 1117 ADC Sitronix ST7565 st7565 initial code ME 1117 ST7567 controller ST7565-0A 1117 regulator
Text: ST Sitronix ST7565 65 x 132 Dot Matrix LCD Controller/Driver FEATURES Direct display of RAM data through the display data RAM. RAM capacity : 65 x 132 = 8580 bits Application Display driver circuits 1/65 duty : 65 common x 132 segment 1/49 duty : 49 common x 132 segment
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ST7565
80x86
ST7565
LCD Controller
ST7567
1117 ADC
Sitronix ST7565
st7565 initial code
ME 1117
ST7567 controller
ST7565-0A
1117 regulator
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E3235
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59WM815/07/03BFT-70
304-WORDSX4BANKSX16-BITS
608-WORDSX4BANKSX8-BITS
216-WORDSX4BANKSX4-BITS
TC59WM815BFT
TC59WM807BFT
TC59WM803BFT
E3235
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133M
Abstract: TC59SM716 xax3 tc59sm708
Text: TOSHIBA TENTATIVE TC59SM716/08/04FT/FTL-75,-80 TO SHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM716/08/04FT/FTL-75
152-WORDSx4BANKSx
16-BITS
304-WORDSX4BANKSX8-BITS
608-WORDSX4BANKSX4-BITS
TC59SM716FT/FTL
152-wordsX4
TC59SM708FT/FTL
TC59SM704FT/FTL
133M
TC59SM716
xax3
tc59sm708
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EDI88128C
Abstract: No abstract text available
Text: EDI88128C W D\ 128Kx8 Monolithic ELECTRONIC DESIGNS, INC. Static Ram 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.
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EDI88128C
128Kx8
EDI88128C
EDI88130C
100ns
EDI88128)
EDI88130)
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Untitled
Abstract: No abstract text available
Text: 256K X 32 BiCMOS/CMOS STATIC RAM MODULE dt) IDT7MP4045 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The IDT7MP4045 is a 256K x 32 static RAM module constructed on an epoxy laminate FR-4) substrate using 8
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IDT7MP4045
IDT7MP4045
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Untitled
Abstract: No abstract text available
Text: E D I 8834 C ^Electronic E DDtrigntIInc. High Speed Monolithic 256K Static RAM 32Kx8 Static RAM CMOS, Monolithic Features The ED I8834C is a high performance, 262,144bit CMOS Static RAM organized as 32K by 8 bits. Combining high speed with low power, this device is ideal
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32Kx8
I8834C
144bit
EDI8834C
EDI8834C35MC
EDI8834C45MC
EDI8834C35RC
EDI8834C45RC
EDIS834C
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM
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TC59LM814/06/02BFT-22
TC59LM814/06/02BFT
TC59LM814BFT
304-words
TC59LM806BFT
TC59LM802BFT
LM814/06/02
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Untitled
Abstract: No abstract text available
Text: 1 MEGABIT 128K x 8-BIT CMOS STATIC RAM PLASTIC SIP MODULE i d ï 8MP824S FEATURES: DESCRIPTION: • High-density 1024K (128K x 8) CMOS static RAM module The IDT8MP824S is a1024K (131,072 x 8-bit) high-speed static RAM constructed on an epoxy laminate substrate using four
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8MP824S
1024K
IDT8MP824S
a1024K
IDT71256
8MP824
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