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    RAM 64K 8KX8 Search Results

    RAM 64K 8KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MC27C64-20 Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    RAM 64K 8KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN


    Original     		LH5164AN PDF

    Untitled

    Abstract: No abstract text available
    Text: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are


    Original     		TK89C668 DS015 8051microcontroller 64Kx8 P89C668 PDF

    28C64A-15

    Abstract: 28C64A ic 8870 ttl
    Text: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the


    Original     		28C64A 28C64A DS11109G-page 28C64A-15 ic 8870 ttl PDF

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 FM1608 64-kilobit MS-011 PDF

    FM1608-120-SG

    Abstract: No abstract text available
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 FM1608-120-SG PDF

    Untitled

    Abstract: No abstract text available
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 MS-011 PDF

    FM1608

    Abstract: FM1608-120-P FM1608-120-S MS-011 MS-013
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608 FM1608 64-kilobit MS-011 FM1608-120-P FM1608-120-S MS-011 MS-013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		FM1608 28-pin MS-011 MS-011 PDF

    EDI8808CB

    Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
    Text: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow


    OCR Scan     		EDI8808CB EDI8808CB 536bit, MIL-STD-883, A0-A12 C323 64K 8KX8 CMOS SRAM sram 8kx8 PDF

    A3738

    Abstract: CA1023 8kx8 sram
    Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns


    OCR Scan     		EDI8808CB EDI8808CB 536bit, D02VSS 0-A12 A3738 CA1023 8kx8 sram PDF

    26R2-5

    Abstract: No abstract text available
    Text: m EDI8808CA35/45/55ÏÏ0 o \ High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs, and 8 common


    OCR Scan     		EDI8808CA35/45/55/70 EDI8808CA MIL-STD-883C, EDI8808CA35/45/55/70 26R2-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8808CA35/45/55/70 High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power 64Kbit CMOS Static CMOS Static RAM organized as 8192 words by 8 bits Random Access Memory • Access Times 35,45,55, and 70ns


    OCR Scan     		EDI8808CA35/45/55/70 EDI8808CA 64Kbit EDI8808CA35/45/55/70 EDI8808CA35/45/S5/70 PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without


    OCR Scan     		28C64A Time--200 DS111091-page 28C64A 8x20mm PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow


    OCR Scan     		EDI8808CB EDI8808CB 536bit, MIL-STD-883, PDF

    Untitled

    Abstract: No abstract text available
    Text: B EH EDH8808ACL 8 5 /1 0 /1 2 /1 5 /2 0 Monolithic The fu tu re . . . today. 8Kx8 Static RAM CMOS, Low Power Monolithic Features 64K bit CMOS Static RAM Organized as 8,192 x8 Bits • Access Times of 85,100, j l 20,150 and 200ns • E and G Functions for Bus Control


    OCR Scan     		EDH8808ACL 200ns 250mW EDH8808ACL EDH8808ACL-15DMHR EDH8808ACL-20DMHR EDH8808ACL-85JMHR DH8808ACL-10JMHR EDH8808ACL-12JMHR EDH8808ACL-15JMHR PDF

    HC6364

    Abstract: IH00 Honeywell sram 8Kx8
    Text: HONEYWELL/S S E C 15E D | MSS1Ô72 0000433 3 | Honeywell HC6464 Military Products T - 4 d-2 5 -0 5 ' 64K x 1 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 jim Process • Similar Characteristics to HC6364 - 8Kx8 SRAM


    OCR Scan     		HC6464 1x101 1x109 HC6364 IH00 Honeywell sram 8Kx8 PDF

    TC5564

    Abstract: 2064 ram Static RAM 2064 8KX8-01 8KX8-03
    Text: CMOS 8KX8-01 CMOS 8KX8-03 64K CMOS STATIC RAM 8,192 WORD X 8 BIT In tegrated C irc u its In c o rp o ra te d S c rs s 206 882-3100 TWX 910-443-2302 integrated circuits incorporated FEATURES: □ □ □ □ □ □ □ □ The CMOS 8KX8-0X series of CMOS S ta tic RAMs


    OCR Scan     		8KX8-01 8KX8-03 100ns MIL-STD-883C. TC5564 2064 ram Static RAM 2064 8KX8-01 8KX8-03 PDF

    daewoo tv diagram

    Abstract: 91AB DAEWOO 80C32 80C52 MCS-51 60C52/32
    Text: DMC 60C52/32i N CMOS SINGLE-COMPONENT 8-BIT MICROCOMPUTER □ FEATURES o 8 bit CPU optimized for control applications o Pin-to-pin compatible with intefs 80C52/ 80C32. o 60C32 Low power CPU only, o 64K External Program Memory Space and Data Memory space o 256 Bytes of On-Chip Data RAM.


    OCR Scan     		60C52/32i 80C52/ 80C32. 60C32 MCS-51 44PLCC 60C52/32 daewoo tv diagram 91AB DAEWOO 80C32 80C52 60C52/32 PDF

    26c64

    Abstract: 26C64A
    Text: $ 28C64A M ic r o c h ip 64 K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non-volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte


    OCR Scan     		Time--200 28-pin 32-pin 8x20mUPPORT 28C64AF 8x20mm 28C64A DS11109F-page 26c64 26C64A PDF

    1kx1 static ram

    Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616
    Text: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si


    OCR Scan     		HS-65641/44/45RH HS-65646/48RH X106RAD S-82C 59ARH S-65142RH S-3560RH S-3569RH S-76161RH 1kx1 static ram 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616 PDF

    SRM2064

    Abstract: Static RAM 2064
    Text: IK s l I In te gra te d C irc u its In co rp o ra te d 10301 W illo w s Road Redm ond, WA 98052 206 882-3100 TW X 910-443-2302 CMOS 8KX8-01 CMOS 8KX8-03 •/■ a ^ * i a ■ ■ 64K CMOS STATIC RAM g -JQ2 VVORD X 8 BIT a m FEATURES: □ Monolithic Design


    OCR Scan     		8KX8-01 8KX8-03 100ns SRM2064 Static RAM 2064 PDF

    12FM160

    Abstract: No abstract text available
    Text: FM1608 |n a M iR Q N 64Kb Bytewide FRAM M emory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • • • • O rganized as 8,192 x 8 bits H igh endurance 10 B illion 1 0 io read/w rites 10 year data retention at 55° C N oD elay write


    OCR Scan     		FM1608 28-pin 12FM160 PDF

    TC5564

    Abstract: 8KX8-01 srm2064 8KX8-03
    Text: Iksi i CMOS 8KX8-01 CMOS 8KX8-03 ^ n a •■ 64K CMOS STATIC RAM g -J 02 VVORD X 8 BIT In tegrated C irc u its In co rp o ra te d 10301 W i I lo w s R o a d m R edm ond, WA 98052 206 882-3100 TW X 910-443-2302 - f c . - FEATURES: □ □ □ □ □ □


    OCR Scan     		8KX8-01 8KX8-03 100ns TC5564 8KX8-01 srm2064 8KX8-03 PDF