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    1kx1 static ram

    Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616
    Text: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si


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    PDF HS-65641/44/45RH HS-65646/48RH X106RAD S-82C 59ARH S-65142RH S-3560RH S-3569RH S-76161RH 1kx1 static ram 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616

    HC6364

    Abstract: No abstract text available
    Text: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through


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    PDF HC6364 MIL-l-38535 1x10s 1x101 1x109 1x10eto 36-LEAD 28-LEAD HC6364/1 HC6364

    x-ray cmos

    Abstract: No abstract text available
    Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator


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    PDF 1x10s 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 x-ray cmos

    socket g34 pinout

    Abstract: smd marking WMM
    Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02


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    PDF HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM

    Untitled

    Abstract: No abstract text available
    Text: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02


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    PDF HC6856 1x106 1x101 1x109 256Kx