ELPIDA 512MB NOR FLASH
Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
Text: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code
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97-DT-0304-00
ELPIDA 512MB NOR FLASH
nand mcp elpida
MCP NOR FLASH SDRAM elpida
Diskonchip
MS08-D9SD7-B3
marking G3
QUALCOMM Reference manual
nec 4 Banks x 1m x 32Bit Synchronous DRAM
emblaze
qualcomm 1100
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MCP 256M nand toshiba
Abstract: Diskonchip QUALCOMM Reference manual TRUEFFS TSOP 48 thermal resistance type1 MARKING G3 MCP 256M nand micron MICRON mcp transistor marking A9M MS06-D9SD8-B3
Text: DiskOnChip -Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, September 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code
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91-DT-0504-00
MCP 256M nand toshiba
Diskonchip
QUALCOMM Reference manual
TRUEFFS
TSOP 48 thermal resistance type1
MARKING G3
MCP 256M nand micron
MICRON mcp
transistor marking A9M
MS06-D9SD8-B3
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PD48
Abstract: uPD481850GF-A12-JBT
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write
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PD481850
PD481850
100-pin
PD48
uPD481850GF-A12-JBT
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MD4832-D512-V3Q18-X-P
Abstract: MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual
Text: DiskOnChip -Based MCP Including Mobile DiskOnChip G3 and Mobile RAM Data Sheet, February 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code
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97-DT-0803-00
MD4832-D512-V3Q18-X-P
MD4331-d1G-V3Q18-X-P marking
Diskonchip
MARKING G3
md4832-d512
ELPIDA K2
MD4811-D512-V3Q18-X
MICRON mcp
nand mcp elpida
QUALCOMM Reference manual
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gck12
Abstract: No abstract text available
Text: WED9LAPC2C16V4BC White Electronic Designs 512K x 32 SSRAM / 512K x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous
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WED9LAPC2C16V4BC
LUCTAPC640
WED9LAPC2C16V4BC
WED9LAPC2C16V4BI
gck12
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PD48
Abstract: PD481850 lm 512
Text: DATA SHEET DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function
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PD481850
PD481850
100-pin
S100GF-65-JBT
PD481850.
PD481850GF-JBT:
PD48
lm 512
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512k x 8 chip block diagram
Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
Text: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous
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WED9LAPC3C16V8BC
LUCTAPC640
WED9LAPC3C16V8BC
WED9LAPC2B16P8BC,
5M-1994.
WED9LAPC3C16V8BI
512k x 8 chip block diagram
WED9LAPC2B16P8BC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.
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PD4811650
256K-WORD
32-BIT
100-pin
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WED9LAPC2B16P8BC
Abstract: WED9LAPC2C16V8BC
Text: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous
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WED9LAPC2C16V8BC
LUCTAPC640
WED9LAPC2C16V8BC
WED9LAPC2B16P8BC,
5M-1994.
WED9LAPC2C16V8BI
WED9LAPC2B16P8BC
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dba1
Abstract: diode MARKING CODE A9 UPD481 diode MARKING A9
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.
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PD4811650
256K-WORD
32-BIT
PD4811650
100-pin
dba1
diode MARKING CODE A9
UPD481
diode MARKING A9
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UPD4811650GF-A10-9BT
Abstract: 0z1 marking
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.
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PD4811650
256K-WORD
32-BIT
PD4811650
100-pin
UPD4811650GF-A10-9BT
0z1 marking
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Untitled
Abstract: No abstract text available
Text: WED48S8030E 2M x 8 Bits x 4 BANKS SYNCHRONOUS DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the use of system clock, I/O
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WED48S8030E
WED48S8030E
100MHz
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Untitled
Abstract: No abstract text available
Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of
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EDI416S4030A
1Mx16
EDI416S4030A
83MHz
100MHz)
83MHz)
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EDI416S4030A
Abstract: No abstract text available
Text: White Electronic Designs EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 100, 83MHz SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) Burst Operation
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EDI416S4030A
1Mx16
EDI416S4030A
83MHz
100MHz)
83MHz)
EDI416S4030A10SI
EDI416S4030A12SI
1Mx16bitsx4banks
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WED48S8030E
Abstract: WED48S8030E10SI WED48S8030E8SI
Text: WED48S8030E White Electronic Designs 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 125, 100MHz SDRAM CAS# Latency = 2 Burst Operation The WED48S8030E is 67,108,864 bits of synchronous high
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WED48S8030E
100MHz
WED48S8030E
WED48S8030E8SI
WED48S8030E10SI
125MHz
WED48S8030E10SI
WED48S8030E8SI
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EDI416S4030A
Abstract: 1Mx16bits
Text: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 100, 83MHz SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)
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EDI416S4030A
1Mx16
83MHz
100MHz)
83MHz)
EDI416S4030A
EDI416S4030A10SI
EDI416S4030A12SI
1Mx16bitsx4banks
1Mx16bits
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EDI416S4030A
Abstract: No abstract text available
Text: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with
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EDI416S4030A
EDI416S4030A
83MHz
100MHz)
83MHz)
EDI416S4030A10SI
1Mx16bitsx4banks
100MHz
EDI416S4030A12SI
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D7678
Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise
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WED416S8030A
2Mx16x4
WED416S8030A
83MHz
100MHz)
83MHz)
WED416S8030A10SI
2Mx16bitsx4banks
100MHz
WED416S8030A12SI
D7678
WED416S8030A10s
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SRA2210SF
Abstract: KSR-2014-000
Text: SRA2210SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2210SF
OT-23F
KSR-2014-000
-10mA,
SRA2210SF
KSR-2014-000
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13001 TRANSISTOR equivalent
Abstract: 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000
Text: SRA2210S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2210S
OT-23
KSR-2030-000
-10mA,
13001 TRANSISTOR equivalent
13001 TRANSISTOR
transistor 13001 CIRCUIT
2030 ic 5 pins
13001 b TRANSISTOR equivalent
13001 switching circuit
transistor 13001
IC 2030 PIN CONNECTIONS
SRA2210S
KSR-2030-000
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wf vqe 14 e
Abstract: Wf vqe 14 WF vqe 14 c wf vqe 13 d wf vqe 21 CQY8 wf vqe 14 d
Text: CQY80 N G Vishay Telefunken T Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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CQY80
CQY80N
CNY80NG
11-Jan-99
CNY80N
wf vqe 14 e
Wf vqe 14
WF vqe 14 c
wf vqe 13 d
wf vqe 21
CQY8
wf vqe 14 d
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DT1122G
Abstract: dt1122 TCDT1120 DT1122G1
Text: TCDT1120 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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TCDT1120
11-Ja
TCDT112
TCDT112.
DT1122G
dt1122
DT1122G1
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et1600
Abstract: No abstract text available
Text: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.
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TCET1600
TCET4600
TCET1600/
TCET2600/
TCET4600
16-lead
11-Ja
TCET2600
et1600
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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