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    EDI416S4030A Search Results

    EDI416S4030A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM Original PDF
    EDI416S4030A10SI White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM Original PDF
    EDI416S4030A10SI White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM Original PDF
    EDI416S4030A12SI White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM Original PDF
    EDI416S4030A12SI White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM Original PDF

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    EDI416S4030A

    Abstract: No abstract text available
    Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) len471) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI

    EDI416S4030A

    Abstract: No abstract text available
    Text: White Electronic Designs EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original     		PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original     		PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz)

    EDI416S4030A

    Abstract: 1Mx16bits
    Text: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 100, 83MHz  SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)
    Original     		PDF EDI416S4030A 1Mx16 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 1Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 100MHz

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original     		PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz)

    EDI416S4030A

    Abstract: No abstract text available
    Text: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with


    Original     		PDF EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    29f040b

    Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
    Text: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3


    Original     		PDF DMD2006F 29f040b teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6