R5478
Abstract: No abstract text available
Text: Li-ION/POLYMER 1CELL PROTECTOR No. EA-291-121009 R5 4 7 5 N /R5 4 7 8 N SERI ES OUTLINE The R5475N/R5478Nxxxxx Series are high voltage CMOS-based protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion Li+ / Lithium polymer excess load current, further include a short circuit
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EA-291-121009
R5475N/R5478Nxxxxx
R5475N/R5478Nxxxxx
R5478
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MBN1200H45E2-H
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-09017
MBN1200H45E2-H
000cycles)
MBN1200H45E2-H
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G15BB
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-09025
MBN500H65E2
000cycles)
G15BB
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MBN1800E17D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-02006 R5 IGBT MODULE MBN1800E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-02006
MBN1800E17D
000cycles)
MBN1800E17D
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Untitled
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode.
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IGBT-SP-02008
MBN900D45A
000cycles)
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MBN1800E17D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-02006 R5 IGBT MODULE MBN1800E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-02006
MBN1800E17D
000cycles)
MBN1800E17D
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MBN1600EB17D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-03002 R5 IGBT MODULE MBN1600EB17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-03002
MBN1600EB17D
000cycles)
MBN1600EB17D
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MBN1200E33D
Abstract: Hitachi DSA0047
Text: Relation No.IGBT-SP-02005 R5 IGBT MODULE MBN1200E33D TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-02005
MBN1200E33D
000cycles)
MBN1200E33D
Hitachi DSA0047
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datasheet micro sd
Abstract: LMV712 MSOP10 SMD10 smd diode code sd smd diode S
Text: National News LMV712 December 2001 www.national.com/pf/LM/LMV712.html LMV712, Dual Operational Amplifier Typical Application Circuit U1 GSM Antenna GSM PA C1 RF Signal U2 C2 In Out Input Output Directional Coupler VPC Coupled C3 C4 R2 R1 V+ SD R5 BIAS Schottky Diode
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LMV712
com/pf/LM/LMV712
LMV712,
LMV712
datasheet micro sd
MSOP10
SMD10
smd diode code sd
smd diode S
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Untitled
Abstract: No abstract text available
Text: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R5 MDM1200E17D FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Repetitive Peak Reverse Voltage
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SR2-SP-08004
MDM1200E17D
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MicroMetrics
Abstract: diode 380 transistor
Text: Scale 100X R5 Chip Styles Chip Styles CS 08 .015 .381 NOM .015 (.381) NOM .030"±.002" [.760±.05] GOLD RIBBON .005 (.13) NOM .030"±.002" . Notes: Top contact & chip size depends on diode parameters. [.760±.05] .015" Max Top & bottom contacts gold. [.380 Max]
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03010 R5 MBN1600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03010
MBN1600E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03010 R5 MBN1600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03010
MBN1600E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03012
MBN800E33D
000cycles)
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06008R5
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
06008R5
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IRHNJ53230
Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Text: PD - 93753 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)
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IRHNJ57230
IRHNJ57230
IRHNJ53230
IRHNJ54230
IRHNJ58230
1000K
IRHNJ54230
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IRHF57234SE
Abstract: No abstract text available
Text: PD - 93831 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42Ω ID 5.4A TO-39 International Rectifier’s R5TM technology provides
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IRHF57234SE
IRHF57234SE
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Untitled
Abstract: No abstract text available
Text: PD - 93880 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.044Ω 35A* TO-254AA International Rectifier’s R5TM technology provides
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O-254AA)
IRHM57260SE
IRHM57260SE
O-254AA
of252-7105
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Untitled
Abstract: No abstract text available
Text: PD - 93752 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034
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IRHNJ57034
IRHNJ53034
IRHNJ54034
IRHNJ58034
1000K
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Diode Equivalent 1n4148
Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148
Text: Philips Semiconductors Product specification Microwave Transistors General APPLICATION INFORMATION COMPONENT DESCRIPTION VALUE A amplifier D.U.T. microwave transistor TR transistor D diode C 1,C 2 tantalum capacitor 22 nF, 50 V R1 resistor 2.2 kß ±5% R2, R3, R5, R6
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MC3403
2N2219
1N4148
Diode Equivalent 1n4148
2n2219 equivalent transistor
equivalent transistor R5
2n2219 equivalent
diode 1n4148 equivalent
resistor
MICROWAVE TRANSISTOR
equivalent diode for 1n4148
equivalent 2N2219
transistor 1N4148
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251AA
Abstract: 2VQ03CT 2VQ03CTF 2VQ04CT 2VQ04CTF
Text: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A/30—40V ' 6.4 .252t ' , 5.351211 1.271.05) MAX r5 .0 5U 9 9) FEATURES •TO-251AA Case I •T0-252AA Case, Surface Mount Device I 2.38MAX (.094) 2.3SMAX (.094) A 7 6.22(.245) 5.98(.235) 0.9C035)
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2VQ03CT
2VQ04CT
2VQ03CTF
2VQ04CTF
O-251AA
T0-252AA
O-252AA
251AA
38MAX
251AA
2VQ04CTF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage
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1SV306
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Untitled
Abstract: No abstract text available
Text: LED-Halterungen Leuchtdiodenhalter fur 3 und 5 mm 0 LED-holder for 3 and 5 mm 0 Montage auf gedruckten Schaltungen Montage on printed circuits Montage auf gedruckten Schaltungen Montage on printed circuits Fur 5 mm-Dioden - 7,6 - r i 7-6 - i ! r5 .0 8 -i 5.08-1
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