1SV306
Abstract: No abstract text available
Text: 1SV306 Preliminary TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package • Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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1SV306
1SV306
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1SV306C-WT
Abstract: No abstract text available
Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES • High capacitance ratio n = 11 min PINNING DESCRIPTION • Low series resistance and good C-V linearity PIN • Ultra small Flat Package (UFP) is suitable for 1 Cathode 2 Anode surface mount design
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Original
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1SV306C-WT
OD-523
OD-523
1SV306C-WT
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PDF
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marking code TI
Abstract: No abstract text available
Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES Low series resistance and good C-V linearity. PINNING High capacitance ratio n=11.0min . DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25OC)
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Original
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1SV306AWT
OD-523
OD-523
marking code TI
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PDF
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marking code TC
Abstract: wt marking WT Series diode Marking code WT 1SV306C-WT
Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES High capacitance ratio n=11.0min Low series resistance and good C-V linearity. Ultra small Flat Package (UFP) is suitable for PINNING DESCRIPTION PIN surface mount design. 1 Cathode 2 Anode 2 1 TC
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Original
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1SV306C-WT
OD-523
22/Subsidiary
OD-523
marking code TC
wt marking
WT Series
diode Marking code WT
1SV306C-WT
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PDF
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"MARKING CODE TI"
Abstract: marking code TI
Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity DESCRIPTION PIN • High capacitance ratio n = 11 min 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol
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Original
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1SV306AWT
OD-523
OD-523
"MARKING CODE TI"
marking code TI
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PDF
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marking code TC
Abstract: diode Marking code WT WT Series
Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES High capacitance ratio n=11.0min Low series resistance and good C-V linearity. Ultra small Flat Package (UFP) is suitable for PINNING DESCRIPTION PIN surface mount design. 1 Cathode 2 Anode 2 1 TC
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Original
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1SV306C-WT
OD-523
OD-523
marking code TC
diode Marking code WT
WT Series
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PDF
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1SV306
Abstract: No abstract text available
Text: 1SV306 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package • Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage
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Original
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1SV306
1SV306
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SV306C-WT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES • High capacitance ratio n = 11 min PINNING DESCRIPTION • Low series resistance and good C-V linearity PIN • Ultra small Flat Package (UFP) is suitable for 1 Cathode 2 Anode surface mount design
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Original
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1SV306C-WT
OD-523
OD-523
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PDF
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marking code TI
Abstract: No abstract text available
Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES PINNING • Low series resistance and good C-V linearity DESCRIPTION PIN • High capacitance ratio n = 11 min 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol
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Original
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1SV306AWT
OD-523
OD-523
marking code TI
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PDF
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1SV306
Abstract: No abstract text available
Text: 1SV306 Preliminary TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package · Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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Original
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1SV306
1SV306
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PDF
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marking code TI
Abstract: "MARKING CODE TI"
Text: 1SV306AWT VHF TUNER VARIABLE CAPACITANCE DIODE FEATURES Low series resistance and good C-V linearity. PINNING High capacitance ratio n=11.0min . DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TI Top View Marking Code: "TI" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25OC)
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Original
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1SV306AWT
OD-523
OD-523
marking code TI
"MARKING CODE TI"
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SV306 Preliminary TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV306 VCO for UHF Band Radio Unit: mm • Small package · Ultra low series resistance: rs = 0.20 Ω typ. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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Original
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1SV306
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PDF
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822 a b
Abstract: 1SV306 china mobile phone circuit diagram C506 C507 C822 CNXT022 RF25A RF25A-12
Text: RF25A RF25A for CDMA, and AMPS Applications The RF25A device includes the following functional blocks: Features • • • • • • • • • • • • NC LNA_OUT NC MIXEMIT IF_TRAP MIX_IN VCC_MIX NC LO_IN 40 39 38 37 36 35 34 33 32 6 26 MIX_BYPASS
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Original
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RF25A
RF25A
822 a b
1SV306
china mobile phone circuit diagram
C506
C507
C822
CNXT022
RF25A-12
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PDF
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schematic diagram vga
Abstract: C268 C823 RF25B conexant 485
Text: RF25B Tx ASIC for CDMA and AMPS Applications The RF25B device includes the following functional blocks: Features • • • • • • Dual-mode operation with high linearity that meets the requirements of the IS-95A and IS-98 standards • 90 dB dynamic range from the VGA
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RF25B
RF25B
IS-95A
IS-98
40-pin
schematic diagram vga
C268
C823
conexant 485
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PDF
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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PDF
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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Original
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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PDF
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
TOSHIBA RF Power Module S-AV24
diode varicap BB 112
varicap v147
2SC386A
2SK1310
3SK78
2sc5066
V101 varicap diode
1SV149
2SK192
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PDF
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X10027-3
Abstract: 1SV306
Text: 1SV306 TOSHIBA TENTATIVE 1 SV3 0 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm 2.1 ± 0.1 • • Small Package Ultra Low Series Resistance : rs = 0.200 Typ. MAXIMUM RATINGS (Ta = 25°C) SYMBOL VR Tj
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OCR Scan
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1SV306
C2V/C10V
470hange
470MHz
X10027-3
1SV306
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PDF
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1SV306
Abstract: No abstract text available
Text: 1SV306 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 306 Unit in mm VCO FOR UHF BAND RADIO 2.1 ± 0.1 • • Small Package Ultra Low Series Resistance : rs = 0.20 ü, Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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1SV306
C2V/C10V
1SV306
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SV306 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE 1 SVB06 Unit in mm 2.1 ± 0.1 • • j 1 -25± O.lj Small Package Ultra Low Series Resistance : rs = 0.20H Typ. EE2 -EB- CHARACTERISTIC Reverse Voltage
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OCR Scan
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1SV306
SVB06
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PDF
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1SV306
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 306 VCO FOR UHF BAND RADIO • • Small Package Ultra Low Series Resistance : rs = 0.20 ü, Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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OCR Scan
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1SV306
1SV306
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 306 Unit in mm VCO FOR UHF BAND RADIO • • 2.1 ± 0.1 j 1 -25± O.lj Small Package Ultra Low Series Resistance : rs = 0.20H Typ. EE2 4 in 3 o -Efl- +I +i oo
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OCR Scan
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1SV306
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage
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OCR Scan
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1SV306
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PDF
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1SV306
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV306 Unit in mm VCO FOR UHF BAND RADIO 2.1 ± 0.1 • Small Package • Ultra Low Series Resistance : rs = 0.200 Typ. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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OCR Scan
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1SV306
C2V/C10V
470MHz
470MHz
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PDF
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