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    MBN1200E33D Price and Stock

    Power Integrations 1SP0635D2S1C-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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    Power Integrations 1SP0635V2M1C-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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    Power Integrations 1SP0635S2M1C-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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    Mouser Electronics 1SP0635S2M1C-MBN1200E33D
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    Power Integrations 1SP0635D2S1-MBN1200E33D

    Gate Drivers Gate Driver ONLY for Hitachi MBN1200E33D module
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    Mouser Electronics 1SP0635D2S1-MBN1200E33D
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    Power Integrations 1SP0635V2M1-MBN1200E33D

    Gate Drivers ONLY for Hitachi MBN1200E33D module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0635V2M1-MBN1200E33D
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    MBN1200E33D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBN1200E33D Hitachi Semiconductor TRANS IGBT MODULE N-CH 3300V 1200A Original PDF

    MBN1200E33D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBN1200E33D

    Abstract: Hitachi DSA0047
    Text: Relation No.IGBT-SP-02005 R5 IGBT MODULE MBN1200E33D TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D Hitachi DSA0047

    MBN1200E33D

    Abstract: ge 521
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R8 P1/6 MBN1200E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D ge 521

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original     		PDF IGBT-SP-02005 MBN1200E33D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-02005 MBN1200E33D 000cycles)

    mdm1200e33d

    Abstract: MBN1200E33D
    Text: Spec.No.SR2-SP-05007 R3 DIODE MODULE MDM1200E33D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K) E(A)


    Original     		PDF SR2-SP-05007 MDM1200E33D mdm1200e33d MBN1200E33D

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-05007R4 P1 MDM1200E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . ABSOLUTE MAXIMUM RATINGS (TC=25 oC) Item Symbol Unit


    Original     		PDF SR2-SP-05007R4 MDM1200E33D

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-05007R4 P1 MDM1200E33D FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . ABSOLUTE MAXIMUM RATINGS (TC=25 oC) Item Symbol Unit


    Original     		PDF SR2-SP-05007R4 MDM1200E33D

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12

    N2M400

    Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
    Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)


    Original     		PDF KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C