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    R25 TRANSISTOR Search Results

    R25 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R25 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3356

    Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024 2SC3356 marking r25 sot23 r25 marking NPN R25 2SC3356 R25 sot-23

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024

    Untitled

    Abstract: No abstract text available
    Text: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through


    Original     		PDF 212A625 40-Lead 1x106 100Krads 1x1014 1x109 AS9000, x5040)

    212A625

    Abstract: No abstract text available
    Text: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through


    Original     		PDF 212A625 1x106 100Krads 1x1014 1x109 1x10-11 1x1012 AS9000, 212A625

    R200

    Abstract: WLFT 404 Al2O3 aluminium foil 200X200 100X100
    Text: Hola1 H A H Thermally conductive foil both sides adhesive – – – – B good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request C D WLFT WLFT WLFT WLFT E F art. no. 404 R25 404 R50 404 R100


    Original     		PDF 100x100 100x200 200x200 R200 WLFT 404 Al2O3 aluminium foil 200X200 100X100

    WLFT 404

    Abstract: aluminium foil WLFT-405 a 404 R200 Heatsinks 3C-23 C23-C23 WLFT 405
    Text: Hola1 H A H Thermally conductive foil both sides adhesive – – – – B good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request C D WLFT WLFT WLFT WLFT E F art. no. 404 R25 404 R50 404 R100


    Original     		PDF 100x100 100x200 200x200 WLFT 404 aluminium foil WLFT-405 a 404 R200 Heatsinks 3C-23 C23-C23 WLFT 405

    2SC3356R25

    Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings


    Original     		PDF 2SC3356 2SC3356 OT-23 2SC3356R25 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23

    2SC3356 Application Note

    Abstract: 2sc3356 2SC3356R25 2SC3356 r25
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SC3356 2SC3356 OT-23 2SC3356 Application Note 2SC3356R25 2SC3356 r25

    lm317 for 5v to 3.3v

    Abstract: LM317 lm317 5v to 3.3v lm317 for 3.3V voltage regulator with lm317 R101 R102 PIC18F87J10 PICDEM EXPLORER r-102
    Text: Using the adjustable voltage regulator on the HPC Explorer Board The PICDEM HPC Explorer board features an adjustable voltage regulator, the venerable LM317. It is U2 on the board, and can be recognized by the TO-220 package that is commonly used for transistors. Nearby


    Original     		PDF LM317. O-220 PIC18F87J10 1K/330R) lm317 for 5v to 3.3v LM317 lm317 5v to 3.3v lm317 for 3.3V voltage regulator with lm317 R101 R102 PICDEM EXPLORER r-102

    Electronic ballast 58W

    Abstract: st l6574 L6561 AN966 L6574 ignition IGBTS 10 amp L6574 application Ballast driver L6574 ignition IGBTS L6561 AN993
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		PDF AN993 L6574 L6561 Electronic ballast 58W st l6574 L6561 AN966 ignition IGBTS 10 amp L6574 application Ballast driver L6574 ignition IGBTS L6561 AN993

    st l6574

    Abstract: ignition IGBTS L6561 AN966 L6574 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		PDF AN993 L6574 L6561 st l6574 ignition IGBTS L6561 AN966 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC

    ELECTRONIC BALLAST transistor DIAGRAM

    Abstract: AN993 L6561 L6574 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		PDF AN993 L6574 L6561 ELECTRONIC BALLAST transistor DIAGRAM AN993 L6561 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP

    R24 marking

    Abstract: 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking
    Text: 2SC3356 2SC3356 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC3356 OT-323 R24 marking 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage


    Original     		PDF OT-323 OT-323 2SC3356

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz +0.05 0.1-0.01


    Original     		PDF 2SC4226 OT-23

    marking r25 NPN

    Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4226W 150mW) OT-323 r23/r24/r25 BL/SSSTF042 marking r25 NPN NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W

    10KD-5

    Abstract: 5KD-5 1KD-5 40110 20KD-5 2KD-5 1.5K15 Thermistor 10 50KD-5 80D-5
    Text: TEMPERATURE COMPENSATION D THERMISTOR The D thermistor, based on resistance changes, is used in transistor, coil and other temperature , compensating circuits found in TV s, radio, etc. Part number 1K D-5 Diameter Disk thermistor Rated zero-power resistance at 25ЊC


    Original     		PDF 3250K5% 3300K5% 3400K5% 3450K5% 3500K5% 3550K5% 3650K5% 3850K5% 3950K5% 10KD-5 5KD-5 1KD-5 40110 20KD-5 2KD-5 1.5K15 Thermistor 10 50KD-5 80D-5

    transistor code R24

    Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS


    Original     		PDF 2SC3356W OT-323 R23/R24/R25 200taxial BL/SSSTF001 transistor code R24 R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor

    transistor code R24

    Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
    Text: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier


    Original     		PDF 2SC4226 OT-323 2SC4226 01-June-2002 transistor code R24 R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET

    WLFT 404

    Abstract: L203 WLFT 405
    Text: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25


    OCR Scan     		PDF 100x100 100x200 200x200 100x200 WLFT 404 L203 WLFT 405

    CN001

    Abstract: CN006 CN003 cn004 ADL-CS346-A02 CN007 s video connector CONNECTOR 5 PIN pitch 2.54mm CN002
    Text: CXA1585Q PCB Evaluation Board RI R2 R3 R4 R5 R7 R9 RIO R ll R12 R14 RI 6 RI 7 RI 8 R19 R20 R21 R22 R23 R25 R26 R27 R28 R29 R33 R34 R35 R36 R37 R38 R39 Fixed Registration Input resistance for Chroma 75 Output resistance for chroma at S input 10K Input resistance for Y


    OCR Scan     		PDF CXA1585Q 22U/10V 1U/10V 7U/10V 01U5Q CN001 CN002 CN003 CN006 cn004 ADL-CS346-A02 CN007 s video connector CONNECTOR 5 PIN pitch 2.54mm

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY OF N TC T h e rm is to rs TYPICAL APPLICATIONS 1. TELECOMMUNICATIONS APPLICATIONS 3. CONSUMER APPLIANCES • Thermostats • Temperature Compensation of Crystal Oscillators TCXO • Gain Stabilization • Transistor Temperature Compensation • Ambient Temperature


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NTC THERMISTORS TYPICAL APPLICATIONS 1. TELECOMMUNICATIONS APPLICATIONS 3. CONSUMER APPLIANCES • Thermostats • Temperature Compensation of Crystal Oscillators TCXO • Refrigerators • Gain Stabilization • Air Conditioners • Transistor Temperature


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL THERMISTOR APPLICATIONS 1. TELECOMMUNICATIONS APPLICATIONS Temperature Compensation of Crystal Oscillators TCXO Gain Stabilization Transistor Temperature Compensation Ambient Temperature Compensation 2. INDUSTRIAL APPLICATIONS Heat Pump Sensors Chiller Sensors


    OCR Scan     		PDF