DS377
Abstract: No abstract text available
Text: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.
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89EB-LOGAN-19
R1431
R1428
R1425
EB-LOGAN-19
SCH-PESEB-002
DS377
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NV18
Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
Text: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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BTQ00
uFCPGA-478
NV18/34/31M
LA-1841
PR113
NV18
isl6247
transistor SMD w26
Socket AM2
Compal Electronics
SMD SOT23 A53
rt8101l
p25 BTQ00
RTL8101L
compal
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RTM875T-605
Abstract: PCI7412 ISL6255 cp2211f E5317 1D05V SB3032 rtm875t 8C622 APL531230
Text: A B C D Columbia/Tangiz Block Diagram Project code: 91.4T301.001 PCB P/N : 48.4T301.01M REVISION : -1M Mobile CPU CLK GEN. 4 2.0G : 71.MEROM.A0U 2.33G : 71.MEROM.B0U 71.09502.00W HOST BUS 533/667 MHz 533/667MHz 533/667 MHz 4, 5 667/800MHz@1.05V TOP 14 CRT
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MAX8744
4T301
9LPRS502
RTM875T-605)
Max8717
667/800MHz
533/667MHz
TPS51100
4g502
RTM875T-605
PCI7412
ISL6255
cp2211f
E5317
1D05V
SB3032
rtm875t
8C622
APL531230
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PCI7412
Abstract: RTM875T-605 SB3030 CP2211F foxconn Wistron Corporation U41S 1D05V APL5915KAI Socket AM2
Text: A B C D Columbia/Tangiz Block Diagram Project code: 91.4T301.001 PCB P/N : 48.4T301.0SA REVISION : 06236-SA Mobile CPU CLK GEN. 4 2.0G : 71.MEROM.A0U 2.33G : 71.MEROM.B0U 71.09502.00W 533/667MHz 533/667 MHz PCB STACKUP TV Out 4, 5 TOP 14 CRT DVI 44 APL5915
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MAX8744
4T301
06236-SA
9LPRS502
RTM875T-605)
Max8717
667/800MHz
533/667MHz
TPS51100
PCI7412
RTM875T-605
SB3030
CP2211F
foxconn
Wistron Corporation
U41S
1D05V
APL5915KAI
Socket AM2
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C148
Abstract: CY7C148 CY7C149 R1481 CY7C149-25PC
Text: 49 CY7C148 CY7C149 1Kx4 Static RAM Features • • • • sion is provided by an active LOW chip select CS input and three-state outputs. The CY7C148 remains in a low-power mode as long as the device remains unselected; i.e., (CS) is HIGH, thus reducing the average power requirements of the
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CY7C148
CY7C149
CY7C148
CY7C149
7C148)
25-ns
C148
R1481
CY7C149-25PC
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C182
Abstract: CY7C182 R1481 C1827
Text: 1CY 7C18 2 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the
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CY7C182
CY7C182,
C182
CY7C182
R1481
C1827
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7cl6
Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese lected • Transparent write 7C161A • CMOS for optimum speed/power
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CY7C161A
CY7C162A
7C161A)
CY7C162
au62A-35DMB
CY7C162Aâ
35KMB
CY7C162A-35LMB
CY7C162A-45DMB
7cl6
D-2501
CY7C162A
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K73 Package
Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when
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CY7C164A
CY7C166A
384x4
CY7C166A
35DMB
CY7C166Aâ
35KMB
CY7C166A-35LMB
K73 Package
3 phase inverter schematic diagram
7C166
CI64A
CY7C164A-45DMB
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A10C
Abstract: CY7C170 C1702 7C170 SA78
Text: 4bE » n QDGbSS3 b • ICYP 256^2 CY7C170 *»■> sÆ CYPRESS _ g SEMICONDUCTOR 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • H ighspeed The CY7C170 is a high-performance CMOS static RAM organized as 4096
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CY7C170
CY7C170
CY7C170-25VC
CY7C170-35PC
CY7C170-35DC
CY7C170-35VC
CY7C170-35DMB
CY7C170-45PC
CY7C170-45DC
CY7C170-45VC
A10C
C1702
7C170
SA78
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automaticpower change over switch circuit diagram
Abstract: CY7C185 CY7C185A
Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable
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CY7C185A
CY7C185A
300-miMilitary
CY7C185Aâ
25LMB
28-Pin
35DMB
28-Lead
automaticpower change over switch circuit diagram
CY7C185
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Untitled
Abstract: No abstract text available
Text: CYPRESS PRELIMINARY Features • High-density 32-m egabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through 1M x 32 • High-speed SRAMs — Access tim e of 12 ns • Low active power — 8.36W m ax. at 12 ns • 72 pins
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32-bit
CYM1851
32-megabit
CYM1851
P6-25C
72-Pin
PZ-25C
PM-35C
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Untitled
Abstract: No abstract text available
Text: CYPRESS 4bE SEMI CONDUCTOR D m SSaTbbE ODOVbáO ^ T -4 6 ^ 1 4 J S.B1CYP CYM1841 CYPRESS r¿r SEMICONDUCTOR 256K x 32 Static R A M M odule Features Functional Description • H lgh-denslty 8-m egabtt SRAM m odule T h e CYM 1841 is à h ig h-perform ance 8-m egabit static R A M m odulé o rganized
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CYM1841
1841L
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Untitled
Abstract: No abstract text available
Text: fax id: 2017 CYM1841A CYM1841C 256K x 32 Static RAM Module Features individual bytes o r any com b in ation o f m ultiple bytes throu gh p ro pe r use of selects. • H ig h -d e n s ity 8 -m eg ab it S R A M m o d u le • 32 -b it sta n d ard fo o tp rin t s u p p o rts d en sitie s from 16K
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CYM1841A
CYM1841C
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CY7C199-20DC
Abstract: No abstract text available
Text: CYPRESS 4bE SEMICONDUCTOR asa%t>a » aoobba? 3 i CYP CY7C198 CY7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power
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CY7C198
CY7C199
GY7C198
CY7C199-20DC
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7C170
Abstract: CY7C170-25VC
Text: CY7C170 f 'Y P P l T Q C ’ F eatures • CMOS for optimum speed/power • High speed — t*A = 25 ns — U cs = 15 ns • Low active power — 495 mW commercial — 660 raW (military) • TTL-compatible inputs and outputs • Capable of withstanding greater than
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CY7C170
CY7C170-25PC
CY7C170-25DC
CY7C170-25VC
CY7C170-35PC
CY7C170-35DC
CY7C170-35VC
CY7C170-35DMB
CY7C170-45PC
7C170
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AB3F
Abstract: CY7B175
Text: BBMSS PRELIMINARY CY7B175 CYPRESS ^ : • ■-'= SEMICONDUCTOR 32K x 9 Synchronous Pentium CPU Cache RAV RAM Features • Supports 66-MHz Pentium CPU cache systems • Supports zero-wait-state performance • 7.5-ns access delay clock to output withOpF
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CY7B175
44-pin
CY7B175
CY7B175--
CY7B175--7NC
CY7B175--11JC
CY7B175--11NC
AB3F
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a1310c
Abstract: 5K530
Text: 41E D • Söbf l MSb m IIII GODllflS H W IH M V MATRA 525 ■ H f l H S _ 2 5 - /0 September 1990 M H S DATA SHEET_ HM 65791 16 K x 4 HIGH SPEED CMOS SRAM SEPARATE I/O AND TRANSPARENT WRITE FEATURES « FAST ACCESS TIME
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bfi45b
a1310c
5K530
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7C188
Abstract: CY7C188
Text: CY7C188 • / CYPRESS 32K x 9 Static RAM Features Functional Description • High speed — 20 ns The CY7C188 is a high-perform ance CMOS static R A M organized as 32,768 words by 9 bits. Easy mem ory expansion is provided by an active-LOW chip enable C E j , an active-H IG H chip enable (C E2),
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CY7C188
32-Lead
300-Mil)
38-00220-C
7C188
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Untitled
Abstract: No abstract text available
Text: M SE 3> SñbfiHSb GDGSlñl 121 •MMHS _Tu£ < ^2 3 - /0 M Preliminary January 1991 HATRA M H S HM 65799 HI-REL DATA SHEET 64 k x 4 WITH OE HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE
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su014
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Untitled
Abstract: No abstract text available
Text: M l M A I S September 1989 HM 65764 DATASHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME
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110mW
-55CT0125C
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Untitled
Abstract: No abstract text available
Text: 4RE D Sñtjfl4Sb □□□llT'ì bfib M M M H S fililíI V r H I September 1990 MATRA M H S HM 65790 DATASHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN
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MHS 65756
Abstract: HM1-65756
Text: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE
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00G5171
MHS 65756
HM1-65756
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Untitled
Abstract: No abstract text available
Text: Mirimi • Advance Inform ation W f ln lM v September 1989 DATA SHEET_ HM 65772 4 kx 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN
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Untitled
Abstract: No abstract text available
Text: 4TE D • Sôbô4Sb GGG123S 535 ■ llllrm I WW i BH MS l l M llll P Preliminary matra n NMHS September 1990 h s HM 65799 DATASHEET 64 K x 4 WITH OE HIGH SPEED CMOS SRAM FEATURES FAST ACC ESS TIM E IND USTR IAL/M ILITAR Y : CO M M ER CIA L : 300 M ILS W IDTH PACKAGE
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GGG123S
HM-65799
536ID
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