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    Nextgen Components CR0201JM470RS1

    RES 470 OHM 5% 1/20W 0201
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    DigiKey CR0201JM470RS1 Reel 3,000,000 60,000
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    Nextgen Components CR0201FM221KS1

    RES 221K OHM 1% 1/20W 0201
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    DigiKey CR0201FM221KS1 Reel 3,000,000 60,000
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    Nextgen Components CR0201JM39RS01

    RES 39 OHM 5% 1/20W 0201
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    DigiKey CR0201JM39RS01 Reel 3,000,000 60,000
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    VENKEL LTD CR0201-20W-2400FT

    RES 240 OHM 1% 1/20W 0201
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    DigiKey CR0201-20W-2400FT Reel 1,554,445 15,000
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    VENKEL LTD CR0201-20W-17R4FT

    RES 17.4 OHM 1% 1/20W 0201
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    DigiKey CR0201-20W-17R4FT Reel 330,000 15,000
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    R0201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		PDF BS62LV1600 115mA R0201-BS62LV1600 220uA 100uA 110uA

    BGA-48-0608

    Abstract: BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV1010EC BS616LV1010EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 64K X 16 bit BS616LV1010 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		PDF BS616LV1010 BS616LV1010 TSOP2-44 R0201-BS616LV1010 BGA-48-0608 BS616LV1010AC BS616LV1010AI BS616LV1010EC BS616LV1010EI TSOP2-44

    BS62LV2006

    Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns


    Original     		PDF BS62LV2006 6/20uA R0201-BS62LV2006 BS62LV2006 BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32

    BS62UV256

    Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
    Text: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns


    Original     		PDF BS62UV256 150ns 100ns BS62UV25rature R0201-BS62UV256 BS62UV256 BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI

    BGA-48-0608

    Abstract: BH616UV1611
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :


    Original     		PDF BH616UV1611 BH616UV1611 55/70ns R0201-BH616UV1611 BGA-48-0608

    BGA-48-0608

    Abstract: BH616UV8011
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns


    Original     		PDF BH616UV8011 x8/x16 R0201-BH616UV8011 TSOP1-48 BGA-48-0608 BH616UV8011

    smd diode c331

    Abstract: smd diode c329 smd diode c328 smd diode C616 CR0402-16W-1000FPT r0201 res murata SAMTECTSW10608GS3PIN 0402 lin res smd diode C618 ST C619
    Text: Evaluation Board User Guide UG-290 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9434 and AD9484 Analog-to-Digital Converters FEATURES Full featured evaluation board for the AD9434 and AD9484


    Original     		PDF UG-290 AD9434 AD9484 AD9517 AN-905 AN-878 AN-877 UG09910-0-7/11 smd diode c331 smd diode c329 smd diode c328 smd diode C616 CR0402-16W-1000FPT r0201 res murata SAMTECTSW10608GS3PIN 0402 lin res smd diode C618 ST C619

    BGA-48-0608

    Abstract: BS616LV2012 BS616LV2012AC BS616LV2012AI BS616LV2012DC BS616LV2012DI BS616LV2012TC BS616LV2012TI TSOP1-48
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA Max. operating current I -grade: 35mA (Max.) operating current


    Original     		PDF BS616LV2012 100ns x8/x16 BS616LV2012 TSOP1-48PIN 48TSOP -12x18mm R0201-BS616LV2012 BGA-48-0608 BS616LV2012AC BS616LV2012AI BS616LV2012DC BS616LV2012DI BS616LV2012TC BS616LV2012TI TSOP1-48

    BS616LV2011AC

    Abstract: BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011
    Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current


    Original     		PDF 100ns x8/x16 R0201-BS616LV2011 BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011

    BGA-48-0608

    Abstract: BS616LV2020 BS616LV2020AC BS616LV2020AI BS616LV2020DC BS616LV2020DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2020 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA Max. operating current I -grade: 35mA (Max.) operating current


    Original     		PDF BS616LV2020 100ns x8/x16 BS616LV2020 -40oC R0201-BS616LV2020 BGA-48-0608 BS616LV2020AC BS616LV2020AI BS616LV2020DC BS616LV2020DI

    TSOP32 pad

    Abstract: bs62lv1027 R0201-BS62LV1027
    Text: Very Low Power CMOS SRAM 128K X 8 bit BS62LV1027 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. at 55ns


    Original     		PDF BS62LV1027 BS62LVontinued) R0201-BS62LV1027 TSOP32 pad bs62lv1027 R0201-BS62LV1027

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 512K X 16 bit BS616LV8016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 31mA Max. at 55ns


    Original     		PDF BS616LV8016 x8/x16 R0201-BS616LV8016A

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016A

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 1M X 8 bit BS62LV8001 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 31mA Max. 2mA (Max.)


    Original     		PDF BS62LV8001 BS62LV8001 II-44 R0201-BS62LV8001A

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8010 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA Max. at 55ns


    Original     		PDF BH616UV8010 V/25OC x8/x16 BH616UNG R0201-BH616UV8010

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current


    Original     		PDF BS62LV1023 BS62LV1023SC BS62LV1023TC BS62LV1023STC BS62LV1023PC BS62LV1023JC BS62LV1023DC BS62LV1023SI BS62LV1023TI BS62LV1023STI

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2565 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current


    Original     		PDF BS62LV2565 BS62LV2565 volt315 R0201-BS62LV2565

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins „ FEATURES BS616LV1613 „ DESCRIPTION • Vcc operation voltage : 2.7~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current


    Original     		PDF BS616LV1613 x8/x16 BS616LV1613 R0201-BS616LV1613

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins „ FEATURES BS616LV1615 „ DESCRIPTION • Vcc operation voltage : 4.5~5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current


    Original     		PDF BS616LV1615 113mA 115mA x8/x16 BS616LV1615 R0201-BS616LV1615

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		PDF BS62LV1600 115mA BS62cal II-44 R0201-BS62LV1600A

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power/Voltage CMOS SRAM 2M X 8 bit BSI BS62LV1603 „ FEATURES „ GENERAL DESCRIPTION • Vcc operation voltage : 2.7V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA @55ns operating current I -grade: 46mA (@55ns) operating current


    Original     		PDF BS62LV1603 BS62LV1603 2048K TSOP2-44 R0201-BS62LV1603

    TSOP2-44

    Abstract: Brilliance Semiconductor, Inc
    Text: BSI Very Low Power/Voltage CMOS SRAM 64K X 16 bit BS616LV1015 „ DESCRIPTION „ FEATURES The BS616LV1015 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 4.5V to 5.5V supply voltage.


    Original     		PDF BS616LV1015 x8/x16 BS616LV1015 TSOP2-44 R0201-BS616LV1015 TSOP2-44 Brilliance Semiconductor, Inc

    M7707

    Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
    Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone


    OCR Scan     		PDF MSM7707 MSM7707 32kbps) Hz/12 b724240 0D257 TQFP100-P-1414-0 M7707 rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202