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    BH616UV1611 Search Results

    BH616UV1611 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BH616UV1611 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit / 2M x 8-bit Original PDF
    BH616UV1611BI55 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit / 2M x 8-bit Original PDF
    BH616UV1611DI55 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit / 2M x 8-bit Original PDF
    BH616UV1611TI55 Brilliance Semiconductor Ultra Low Power/High Speed CMOS SRAM 1M x 16 bit / 2M x 8-bit Original PDF

    BH616UV1611 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGA-48-0608

    Abstract: BH616UV1611
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :


    Original     		PDF BH616UV1611 BH616UV1611 55/70ns R0201-BH616UV1611 BGA-48-0608

    BGA-48-0608

    Abstract: BH616UV1611
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :


    Original     		PDF BH616UV1611 BH616UV1611 R0201-BH616UV1611 BGA-48-0608

    BH616UV1611A

    Abstract: No abstract text available
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA Max. at 55ns


    Original     		PDF BH616UV1611 V/25OC x8/x16 BH616UV16ailure R0201-BH616UV1611 BH616UV1611A

    BGA-48-0608

    Abstract: BH616UV1611 BH616UV1611A brilliance semiconductor rohs
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :


    Original     		PDF BH616UV1611 BH616UV1611 R0201-BH616UV1611 BGA-48-0608 BH616UV1611A brilliance semiconductor rohs

    BH616UV1611

    Abstract: No abstract text available
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA Max. at 55ns


    Original     		PDF BH616UV1611 V/25OC x8/x16 8x10mm R0201-BH616UV1611 BH616UV1611

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006