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    BS616LV2011TI Search Results

    BS616LV2011TI Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2011TI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616LV2011TI-10 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF
    BS616LV2011TI-100 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V|5V Supply, Industrial, TSOP I, 48-Pin Original PDF
    BS616LV2011TI-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V|5V Supply, Industrial, TSOP I, 48-Pin Original PDF
    BS616LV2011TI-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 bit Original PDF

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    BS616LV2011AC

    Abstract: BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011
    Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current


    Original     		100ns x8/x16 R0201-BS616LV2011 BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011 PDF

    BS616LV2011

    Abstract: BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES BS616LV2011 „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		BS616LV2011 100ns TSOP1-48PIN R0201-BS616LV2011 BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 PDF

    BS616LV2011DC

    Abstract: BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011 BS616LV2011AC BS616LV2011AI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current


    Original     		100ns x8/x16 R0201-BS616LV2011 BS616LV2011 BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011 BS616LV2011AC BS616LV2011AI PDF