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    Q2 EX Price and Stock

    Diodes Incorporated PI3USB31532Q2ZLCEX

    USB Switch ICs USB Type-C Alt Mode Switch W-QFN3060-40 T&R 3.5K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PI3USB31532Q2ZLCEX 3,473
    • 1 $2.67
    • 10 $2.4
    • 100 $1.96
    • 1000 $1.41
    • 10000 $1.3
    		Buy Now

    Diodes Incorporated PI3DBS16222Q2ZLEX

    PCI Interface IC PCIe Switch W-QFN2545-30 T&R 3.5K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PI3DBS16222Q2ZLEX 3,267
    • 1 $4.82
    • 10 $4.1
    • 100 $3.55
    • 1000 $2.55
    • 10000 $2.42
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    Diodes Incorporated PI6CG338Q2ZLWEX

    Clock Generators & Support Products Clock Generator V-QFN6060-48 T&R 3K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PI6CG338Q2ZLWEX 3,000
    • 1 $8.07
    • 10 $7.29
    • 100 $6.03
    • 1000 $4.58
    • 10000 $4.41
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    Diodes Incorporated PI3WVR14412Q2ZLCEX

    Video Switch ICs Display Switch W-QFN3060-40 T&R 3.5K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PI3WVR14412Q2ZLCEX 3,168
    • 1 $3.61
    • 10 $3.24
    • 100 $2.65
    • 1000 $1.9
    • 10000 $1.81
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    Diodes Incorporated PI4IOE5V6534Q2ZLWEX

    Interface - I/O Expanders Interface IO Expander W-QFN4565-46 T&R 3.5K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PI4IOE5V6534Q2ZLWEX 13,461
    • 1 $3.21
    • 10 $2.73
    • 100 $2.37
    • 1000 $1.7
    • 10000 $1.6
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    Q2 EX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tektronix 454

    Abstract: bosch sg compaq battery Delco Cyrix geode compaq 510 Q2980 nokia fasb
    Text: Q2 - FY01 Financial Summary n n n Q2 Bookings were down 19% from Q2 previous year and 28% down from previous quarter due to: – Wireless sector correcting channel inventory and overall softness in broad market – PC business not reflecting traditional holiday selling strength


    Original     		PDF Q1FY2001 Q2/FY00 tektronix 454 bosch sg compaq battery Delco Cyrix geode compaq 510 Q2980 nokia fasb

    Motherboard dell

    Abstract: goldstar Delco PicoPower Ericsson Marconi cyrix 486
    Text: Q2 - FY00 Financial Summary n n n Q2 Bookings were up 18% over Q1. Up 43% from prior year – Led by Analog bookings: wireless communications and broad market – Communication infrastructure improving – Advance I/O orders up with PC market Q2 revenues up from Q1 due to continued strength in


    Original     		PDF Q3/98 Q4/98 Q1/99 Q2/99 Q3/99 Q4/99 Q1/00 Q2/00 Q2/97 Q3/97 Motherboard dell goldstar Delco PicoPower Ericsson Marconi cyrix 486

    F100K

    Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
    Text: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Top View PLCC J28-1 18 Q1 Q1 VCCA 2 1 VCC VCC 28 27 Q2 26 Q2 Q0 1 2 SD2 CD2 CP2 3 4 5 6 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12


    Original     		PDF J28-1 F24-1 s0S331FC SY100S331JCTR SY100S331JC SY100S331 F24-1) F100K SY100S331 SY100S331FC SY100S331JC SY100S331JCTR

    F100K

    Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
    Text: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Q1 Q1 VCCA 2 1 Top View PLCC J28-1 VCC VCC 28 27 18 Q2 26 Q2 1 2 SD2 CD2 3 4 5 6 CP2 Q0 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12


    Original     		PDF J28-1 F24-1 SY100S331FC SY100S331JCTR SY100S331JC SY100S331 F24-1) F100K SY100S331 SY100S331FC SY100S331JC SY100S331JCTR

    Untitled

    Abstract: No abstract text available
    Text: IRF7904PbF-1 HEXFET Power MOSFET VDS 30 RDS on max Q1 V 16.2 (@VGS = 10V) mΩ RDS(on) max Q2 10.8 (@VGS = 10V) Qg (typical) Q1 7.5 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 7.6 ID(@TA = 25°C)Q2 11 nC G1 1 8 D1 S2 2 7 S1 / D2 S2 3 6 S1 / D2 G2 4 5 S1 / D2 SO-8


    Original     		PDF IRF7904PbF-1 D-020D

    54HC123

    Abstract: one shot monostable IC MONOSTABLE MULTIVIBRATOR USING TRANSISTOR lear D-16 4031 pin diagram
    Text: SEi - Radiation Hardened 54HC123RP Dual Retriggerable Monostable Multivibrator A1 1 16 V C C R EXT1 C EXT B1 CLR1 TOP VIEW C EXT1 Q1 Q1 Q2 Q2 C EXT2 R EXT2 C EXT GND 8 CLR2 B2 9 A2 Features • RAD-PAK Technology Hardened Against Natural Space Radiation


    Original     		PDF 54HC123RP TM5005 54HC123 one shot monostable IC MONOSTABLE MULTIVIBRATOR USING TRANSISTOR lear D-16 4031 pin diagram

    IRF9910PBF

    Abstract: No abstract text available
    Text: IRF9910PbF-1 VDS 20 RDS on m ax Q1 HEXFET Power MOSFET V 13.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 9.3 (@VGS = 10V) Qg (typical) Q1 7.4 Qg (typical) Q2 15 ID(@TA = 25°C)Q1 10 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A ID(@TA = 25°C)Q2 12 Applications


    Original     		PDF IRF9910PbF-1 IRF9910PBF

    Untitled

    Abstract: No abstract text available
    Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Symbol Rating Q1 Q2 VCBO 10


    Original     		PDF MT6L71FS MT3S07FS MT3S11AFS

    HN1L03FU

    Abstract: No abstract text available
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package


    Original     		PDF HN1L03FU HN1L03FU

    Untitled

    Abstract: No abstract text available
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V


    Original     		PDF HN1L02FU

    Pch MOS FET

    Abstract: HN1L03FU
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package


    Original     		PDF HN1L03FU Pch MOS FET HN1L03FU

    Pch MOS FET

    Abstract: No abstract text available
    Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V


    Original     		PDF HN1L02FU Pch MOS FET

    IRF7907PBF

    Abstract: No abstract text available
    Text: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications


    Original     		PDF IRF7907PbF-1 IRF7907PBF

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    HN1L03FU

    Abstract: No abstract text available
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package


    Original     		PDF HN1L03FU HN1L03FU

    HN1L03FU

    Abstract: FET MARKING Silicon NP Channel MOS FET High Speed Power Switching
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package


    Original     		PDF HN1L03FU HN1L03FU FET MARKING Silicon NP Channel MOS FET High Speed Power Switching

    EMC3DXV5T5

    Abstract: No abstract text available
    Text: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Q1 R2 Q2 R1 4 and Q2, − minus sign for Q1 PNP omitted)


    Original     		PDF OT-553 EMC3DXV5T5

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 IS 2.7e-16 BF 185 Parameters MJC XCJC Q1, Q2 UPA802TC UNITS Parameter Units 0.56 time 0.2 capacitance seconds farads henries ohms NF 1.02 CJS inductance VAF 15 VJS 0.75 resistance IKF 0.055


    Original     		PDF UPA802TC 7e-16 77e-11 2e-12 8e-12 5e-12 24-Hour

    CA-303HS

    Abstract: No abstract text available
    Text: Crystal unit SMD / CYLINDER HIGH-STABILITY CRYSTAL UNIT MA-406H/CA-303HS Product number please refer to page 1 Q2 4M4 0 6Hx x x x x 0 0 Q2 3 C 3 0 3Sx x x x x 0 0 • • • • High-density mounting-type. Excellent heat-resistance and environment capability.


    Original     		PDF MA-406H/ CA-303HS MA-406H 128AU61 CA-303HS

    HN1D03FU

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		PDF HN1D03FU HN1D03FU TOSHIBA "ULTRA HIGH SPEED" DIODE

    HN1D03F

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		PDF HN1D03F HN1D03F

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO 13 13 V Collector-emitter voltage


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    Pch MOS FET

    Abstract: HN1L03FU
    Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l Low threshold voltage Q1: Vth = 0.8~2.5V l High speed Q2: Vth =−0.5~−1.5V l Small package


    Original     		PDF HN1L03FU Pch MOS FET HN1L03FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		PDF HN1D03F