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Microchip Technology Inc DSC400-1111Q0044KI2 MEMS OSC XO 2.25V-3.6V 20VFQFN
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DigiKey	DSC400-1111Q0044KI2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Microchip Technology Inc DSC400-1111Q0044KI2T MEMS OSC XO 2.25V-3.6V 20VFQFN
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DigiKey	DSC400-1111Q0044KI2T	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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SMC Corporation of America NQ2Z50-GEQ004-45 COMPACT CYLINDER, NCQ2-Z SERIES \| SMC Corporation NQ2Z50-GEQ004-45
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RS	NQ2Z50-GEQ004-45	Bulk		5 Weeks	1	1 $169.32 10 $169.32 100 $169.32 1000 $169.32 10000 $169.32	Get Quote

Q0044 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Q0051 Abstract: Q0032 Q0043 Q004 Text: Application Note Frequently Asked Questions on Development Tools and Products Fujitsu Mikroelektronik GmbH, Microcontroller Application Group History 2nd August 99 HLO Original version of master and database Note: This document is currently under development. This first version covers only a	Original	PDF	Q0031 Q0044 0xFE0000 Q0027, Q0028, Q0029, Q0030, Q0031, Q0032, Q0034, Q0051 Q0032 Q0043 Q004
1720b Abstract: No abstract text available Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data	OCR Scan	PDF	IBM11M1720B 1Mx72 110ns 130ns 50H4346 IBM11M1720B 000HH1B 1720b
Untitled Abstract: No abstract text available Text: G M 82C 650 GoldStar GOLDSTAR ELECTRON CO ,LTD GoldStar Sound Generator 1. G eneral Description The GM82C650 is a high performance digital sound generator, which is applicable for many musical applications like PC sound card, sound module, karaoke, keyboard,and	OCR Scan	PDF	GM82C650 20bits
Untitled Abstract: No abstract text available Text: S u p ertex inc. M VP0104N6/VP0104N7 VP0106N6/VP0106N7 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package B Voss/ B V oos max 14-Pin P-DIP 14-Pin C-DIP* -40V 8£2 VP0104N6 VP0104N7 -60V 8£2 VP0106N6 VP0106N7	OCR Scan	PDF	VP0104N6/VP0104N7 VP0106N6/VP0106N7 14-Pin VP0104N6 VP0104N7 VP0106N6 VP0106N7 Q004431
ECG956 Abstract: philips tantalum Capacitors ECG966 transistor ECG128 circuit diagram of 12v battary charger ECQ966 15A Adjustable Positive Voltage Regulator ecg128 A-254168-2 AC voltage regulator 12v output 5 pin Text: PHILIPS E C G INC 17E {^53^20 Positive Voltage Regulator Features • Adjustable output down to 1.2V • Guaranteed 1.5A output current • Line regulation typically 0.01 % /V • Load regulation typically 0.1% • Current limit constant with temperature • 100% electrical burn-in	OCR Scan	PDF	ECG956 ECG956 ECG96C ECG966 T-58-1T-23 philips tantalum Capacitors ECG966 transistor ECG128 circuit diagram of 12v battary charger ECQ966 15A Adjustable Positive Voltage Regulator ecg128 A-254168-2 AC voltage regulator 12v output 5 pin
BDY13 Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12 Text: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.	OCR Scan	PDF	Q62702-D378 Q62702-D378-V4 Q6270 BDY13 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
TRANSISTOR REPLACEMENT ECG 130 Abstract: ECG950 ECG988 ECG977 Text: PHILIPS E C G INC 17E fj • bbSBTSfl G0G44D7 1 ' ECG ECG950, ECG951, ECG977, ECG981, ECG988 3-Terminal Positive Voltage Regulator Sem iconductors .200 " - 5.08 -1 Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection	OCR Scan	PDF	G0G44D7 T--58--11--13 ECG961 ECG969 ECG950, ECG951, CG977 ECG981/ECG988 TRANSISTOR REPLACEMENT ECG 130 ECG950 ECG988 ECG977
Untitled Abstract: No abstract text available Text: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.	OCR Scan	PDF	235b05 QGD4440 BDX27 BDX28 Q62702-D162 Q62702-D162-V6 Q62702-D162-V10 Q62702-D162-V16 Q62702-D159 Q62702-D159-V6
Untitled Abstract: No abstract text available Text: Microsem i a m m m w m enm w n, at m a 5 8 0 P le a s a n t S t. W a te rto w n , M A 0 2 1 7 2 P H : 61 7 9 2 6 -0 4 0 4 2N3501 F A X : (6 1 7 ) 9 2 4 -1 2 3 5 Features 150 Volts 500mAmps • M e e ts M IL -S -1 9 5 0 0 /3 6 6 • C o lle c to r-B a s e V o lta g e 1 5 0 V	OCR Scan	PDF	2N3501 500mAmps 100kHz 100MHz) 10mAdc, 10Vdc, 10Vdc. 12Vdc,
Untitled Abstract: No abstract text available Text: A p p l ic a t io n N o t e AVAILABLE AN61 X25160 16K XiGH 2K x 8 Bit SPI Serial E2PROM With Block Lock Protection FEATURES DESCRIPTION • 2MHz Clock Rate • SPI Modes 0,0 & 1,1 • 2K X 8 Bits — 32 Byte Page Mode • Low Power CMOS — <1\|±A Standby Current	OCR Scan	PDF	X25160
5304 smd 8 pin Abstract: isplsi device layout Text: Lattice ispLSI and pLSI 1024 ¡ Sem iconductor i Corporation H igh-D ensity Program m able Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — High-Speed Global Interconnect 4000 PLD Gates 48 I/O Pins, Six Dedicated Inputs	OCR Scan	PDF	Military/883 1024-60LJ 68-Pin 1024-60LJI MILITARY/883 1024-60LH 962-9476101MXC 5304 smd 8 pin isplsi device layout
Untitled Abstract: No abstract text available Text: IB M 1 1 M 2 6 4 0 H IB M 1 1 M 2 6 4 0 H B 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM - • Performance:	OCR Scan	PDF	2Mx64 130ns 110ns
KE524505 Abstract: No abstract text available Text: 0004445 7 « P R X P 0 IdEREX INC T - 3 3 ~ 3 £>" m M B Œ KE524505 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module	OCR Scan	PDF	KE524505 BP107, Amperes/600 KE524505
BDW 16.24K5000-C2-5 Abstract: No abstract text available Text: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.	OCR Scan	PDF	Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 A23SbOS BDW 16.24K5000-C2-5

Untitled Abstract: No abstract text available Text: RELEASED C O P Y R IG H T BY 1999 AMP IN CO RP O RA TE D. FOR ALL 3 i 4 PUBLICATION RIGHT5 i 13-. 2 LOC DI ST REVI SI ONS A RE SE R VE D . D 1 0 LTR DESCRIPTION 5 chn I11 +0 . 5 1 . 8 APVD SECT I 0 ±0 . 5 3 1 DWN DATE 3 5 . 8 i_n o o + m o b I Œ •0 . 4	OCR Scan	PDF	JAN-98 27JUN9G eq004467
BF245 Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205 Text: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar	OCR Scan	PDF	S23SbQS Q0044S7 o-BF245C Q62702-F236 Q62702-F209 Q62702-F182 Q62702-F205 BF245A AKTIEN6ESELLSCHAF-BF245C 103MHz BF245 BF 245 2SC 1885 transistor BF 509 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205