Untitled
Abstract: No abstract text available
Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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023SbQS
Q004312
60203-Y66
BCY66
QQ0M31Ö
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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transistor BD 430
Abstract: 0436L
Text: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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fl23Sb05
0D043fal
0436L
fl335b05
Q0043b2
transistor BD 430
0436L
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VN1710L
Abstract: No abstract text available
Text: VN1706 VN1710 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 170V 6Q 1.0A VN1706B VN1706L VN1706D 170V 10£2 1.0A — VN1710L — Advanced DMOS Technology High Reliability Devices
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VN1706
VN1710
O-220
VN1706B
VN1706L
VN1706D
VN1710L
300jiS
VN1710L
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ecg955
Abstract: ECG955M
Text: PHILIPS E C G INC 17E D ECG Semiconductors • ^ 5 3 1 2 0 0D0431D fl ■ ECG833 ■ t Timing Circuit 4 I Features • Timing from microseconds through hours • Operates in both astable and monostable modes • Output can drive TTL f •2 6 0 " 6 .6 0 MAX.
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0D0431D
ECG833
ECG833
Tri99
ecg955
ECG955M
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Untitled
Abstract: No abstract text available
Text: @ SPT S P T 7 9 2 2 12-BIT, 30 MSPS, TTL, A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz Input On-Chip Track/Hold Bipolar ±2.0 V Analog Input
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12-BIT,
12-Bit
SPT7922
12-bit
SPT7922SCJ
SPT7922SCQ
52B-2370;
0GG4322
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E European “Pro Electron” Registered T y p e s _ 7MLböSl 0D0H310 Tfl7 WMQTY CNY35 Optoisolator AC Input GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY35 consists o f two gallium arsen id e, in frared
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CNY35
0D0H310
CNY35
CNY35,
2N5308-D45H8
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Untitled
Abstract: No abstract text available
Text: October 1992 Edition 1.0 FUJITSU DATA S H E E T F2MC-8L MB89650A SERIES 8-BIT MICROCONTROLLERS MB89653A/655A/656A/P657A/MB89PV650A DESCRIPTION T he M B89650A seríes of m icrocontrollers has been developed as a general-purpose product in the F2M C -8 l M B 8 9 6 00 fam ily of 8-bit single-chip m icrocontrollers which is
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MB89650A
MB89653A/655A/656A/P657A/MB89PV650A
B89650A
100-Lead
FPT-100P-M05)
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Untitled
Abstract: No abstract text available
Text: Integrated Circuit Systems, Inc. ICS9148-11 Frequency Generator & Integrated Buffers for PENTIUM General Description Features Generates four processor, six bus, one 14.31818MHzand 12 SDRAM clocks. Synchronous clocks skew matched to 250ps window on CPU, SDRAM and 500ps window on BUS clocks.
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ICS9148-11
31818MHzand
250ps
500ps
48-pin
ICS9148-11
ICS9148F-11
4fl2575fl
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semikron skiip 10 neb 06
Abstract: Semikron skiip 20 neb 06
Text: se MIKR on SKiiP 20 NEB 06 - SKiiP 20 NEB 06 I Absolute Maximum Ratings Symbol Conditions ’> Inverter Vces Vges Theatsink ~ 25 / 80 °C lc tp < 1 ms; Theatsink “ 25 / 80 °C Icm Theatsink —25 / 80 °C If = _lc Ifm = - I cm tp < 1 mS, Theatsink = 25 / 80 C
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20NC0604
20NC0603
20NC0605
semikron skiip 10 neb 06
Semikron skiip 20 neb 06
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BO 649
Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington
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0235bQS
T-33-29
OP-66)
643/BD
645/BD
BD643.
0QQ43
T-33-29
BD647
BO 649
BD 104
darlington bd 645
TOP-66
b 647 c
BD 649
BD64S
Q62702-D376
BD 104 NPN
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transistor BD 800
Abstract: transistor BD 110
Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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A235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 800
transistor BD 110
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LM series voltage regulators
Abstract: Mallory VPR
Text: 1.0 & 3.0 AMP MINICONVERTER SWITCHING REGULATORS TEL: 805-498-2111 FEATURES • Pin for pin interchangeable with National’s LM2575/LM2576 Series • DC-to-DC buck or buck/boost converter requiring only 4 support components • Fixed or adjustable voltages
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LM2575/LM2576
LM2575/76
LM2575
LM2576
O-263
LM2575S,
LM2576S
LM series voltage regulators
Mallory VPR
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189-227
Abstract: No abstract text available
Text: AC Capacitors AC Capacitors: Motor-start Type ETW—Electrolytic Designed to operate for a minimum o f 50,000 starts, Type ETW electrolytic capacitors are ideal for motor-starting applications such as washing machines and refrigerators. Performance Highlights
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21-125-K
ETW25-125-K
ETW30-125-K
ETW36-125-K
TW43-125-K
000-ohm,
ETW108-330KR
Q0043b7
189-227
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MSC2312YS9
Abstract: c2312 54SMO
Text: O K I SEMICONDUCTOR C U SII GROUP IDE D j| ^ 7 5 4 5 4 0 000M3Sti 1 | » m ie o n tìu G to * * •' 111 MSC2312YS9/KS9 • J ' . 4 " 1 ,0 4 8 ,5 7 6 BY 9 B IT D Y N A M IC RAM M O D ULE GENERAL D E S C R IP TIO N The Oki MSC2312YS9/KS9 is a fully decoded, 1,048,576 words X 9 bit CMOS dynamic random
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MSC2312YS9/KS9
MSC2312YS9/KS9
MSM5110OOJS)
MSM511000JS;
30-Pin
b7S4540
D043ba
ram-msc2312ys9/ks9
T-46-23-17
MSC2312YS9
c2312
54SMO
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Untitled
Abstract: No abstract text available
Text: S ta n d a rd P r o d u c t _w_ PMC I/ l ^ I PMC-Sierra, Inc. ISSUE 3 PM7375 LASAR-155 LOCAL A m SAR & PHYSICAL LAYER 1. F E A T U R E S • Single-chip Peripheral Component Interface PCI Bus Local ATM Network Interface using SONET/SDH framing at 155.52 or 51.84 Mbit/s and ATM
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PM7375
LASAR-155
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transistor BD 110
Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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fl235bQ5
Q62702-D905
Q62902-B63
Q62902-B62
transistor BD 110
0437
Q62902-B62
transistor BD 524
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ns 4203
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 0 L § € = ¥ ! ^ = -= 7 = 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 Wc i RAS Access Time 60ns 70ns tcAC i CAS Access Time 20ns 25ns
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1Mx64
130ns
ns 4203
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Untitled
Abstract: No abstract text available
Text: se MIKRO n SKiiP 21 NEB 06 - SKiiP 21 NEB 06 I Absolute Maximum Ratings S ym bol [C o n d itio n s 11 Values Units 600 ±20 2 0 /1 4 4 0 /2 8 2 5 /1 5 5 0 /3 0 V Inverter & Chopper Vces Vges T h eatsink = 25 / 80 °C lc tp < 1 ms; T h eatsink —25 / 80 °C
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fll3bb71
Q004333
813bb71
0G0M334
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CS8402-CS
Abstract: Biphase mark code CONVOY PROTECTION DEVICE dm 311 convoy protection AES3-199X PE-65612 IEC-908 totx174 CS8401
Text: CRYSTAL m 3fiE J> SEMICONDUCTOR m 25M b3E4 n u 3 £ zy szy s~ 3 !3 B m s a D0G4304 1 ESCYS CS8401 CS8402 Semiconductor Corporation jT -7 5 -^ -Q 6 _ Digital Audio Interface Transmitter Features General Description • Monolithic Digital Audio Interface
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254b3E4
CS8401
CS8402
CP-340
RS422
CS8401)
CS8401/2
DS60PP3
CS8402-CS
Biphase mark code
CONVOY PROTECTION DEVICE
dm 311
convoy protection
AES3-199X
PE-65612
IEC-908
totx174
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Untitled
Abstract: No abstract text available
Text: 3.0 AMP LOW DROPOUT POSITIVE VOLTAGE REGULATORS TEL: 805-498-2111 FEATURES • Low dropout performance 1.2V max. for EZ1587A 1.3V max. for EZ1587 • Full current rating over line and temperature • Fast transient response • ±2% total output regulation over line, load,
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EZ1587A
EZ1587
90juA
O-220
O-263
DDD43SÃ
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itv.v59.031
Abstract: No abstract text available
Text: 160 Series • Metallized Polyester / Radial Leads ■ Radial Leaded 10 mm to 27.5 mm GENERAL SPECIFICATIONS ■ Non Inductively Wound ■ Non-Polar ■ Flame Retardant Case Meets UL94V0 Operating Temperature: -55°C to +125CC with voltage derating above 85°C
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UL94V0
1284/lndianapolis
46206-1284/Phone:
273-0090/Fax:
0QQM33S
itv.v59.031
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Untitled
Abstract: No abstract text available
Text: _ bq3285 BENCHMARQ Real-Time Clock RTC > Calendar in day of the week, day of the month, months, and years, with automatic leap-year adjustment Features >- Direct clock/calendar replacement for IBM8* AT-compatible computers and other applications >• Functionally compatible with the
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bq3285
DS1285
MC146818A
24-hour
28-Pin
D00430?
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Untitled
Abstract: No abstract text available
Text: M O SEL VITELIC V53C808H HIGH PERFORMANCE 1Mx 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORM ANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (tpC)
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V53C808H
V53C808H
b3S33
00Q4325
28-Pin
00G432b
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