AM29F040B
Abstract: am29f040 amd am29f040b datasheet amd am29f040b am29f040b die DSASL0064931 Publication# 19957 Am29F040 98401
Text: SUPPLEMENT Am29F040B Data Sheet Supplement for PROM Programmer Manufacturers This supplement is for use with the Am29F040B data sheet, publication number 21445, and describes the sector protection and sector unprotection functions intended for programming equipment.
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Am29F040B
Characteristics--98401
am29f040
amd am29f040b datasheet
amd am29f040b
am29f040b die
DSASL0064931
Publication# 19957 Am29F040
98401
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AM29F040B-55
Abstract: AM29F040B-70 AM29F040B-90 IN3064 plcc 28 spansion Publication# 19957 Am29F040 AM29F040B am29f040b e7
Text: Am29F040B Data Sheet Am29F040B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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Am29F040B
21445E8
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IN3064
plcc 28 spansion
Publication# 19957 Am29F040
am29f040b e7
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AM29F040B
Abstract: AM29F040B-120 AM29F040B-90 AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B amd
Text: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device
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AM29F040B
Abstract: No abstract text available
Text: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device
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Abstract: No abstract text available
Text: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device
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am29f040b
Abstract: Publication# 19957 Am29F040
Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology
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Am29F040B
Am29F040
pre032
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32-Pin
16-038-TSOP-2
Publication# 19957 Am29F040
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AM29F040B-120
Abstract: AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 Publication# 19957 Am29F040
Text: Am29F040B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the
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Am29F040B
21445E5
AM29F040B-120
AM29F040B-55
AM29F040B-70
AM29F040B-90
IN3064
Publication# 19957 Am29F040
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology
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A8A7
Abstract: AM29F040B AM29F040B-120 AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 AM29F040B-70JF/T
Text: Am29F040B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F040B
Numbe999)
CS39S
A8A7
AM29F040B-120
AM29F040B-150
AM29F040B-55
AM29F040B-70
AM29F040B-90
IN3064
AM29F040B-70JF/T
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AM29F040B-120
Abstract: AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 CS39S
Text: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device
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Am29F040B
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AM29F040B-70
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IN3064
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AM29F040B
Abstract: No abstract text available
Text: Am29F040B Data Sheet Am29F040B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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AM29F040B
Abstract: AM29F040B-90 AM29F040B-120 AM29F040B-150 AM29F040B-55 AM29F040B-70 IN3064
Text: Am29F040B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F040B
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algorithm microprocessor
Abstract: AM29F040B-120 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 AM29F040B am29f040b-55 jd
Text: Am29F040B Data Sheet RETIRED PRODUCT The Am29F040B is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any
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AM29F040B-90
IN3064
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21445E7
Abstract: am29f040b e7
Text: Am29F040B Data Sheet Am29F040B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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Am29F040B
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am29f040b
Abstract: No abstract text available
Text: Am29F040B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F040B
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AM29F040B-120
Abstract: AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064
Text: Am29F040B Data Sheet Retired Product Am29F040B Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
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Am29F040B
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AM29F040B-70
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IN3064
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AM29F040B
Abstract: No abstract text available
Text: AMD£1 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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29f040b
Abstract: 29F040B70 AM29F040B
Text: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ Embedded Algorithms — Minimizes system level power requirements — Embedded Erase algorithm automatically
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Am29F040B
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AM29F040B
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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Am29F040B
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AM29F040B
Abstract: AM29F040B-70 AM29F040B-55 AM29F040B-1505
Text: A M D tl Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically
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Am29F040B
Am29F040
AM29F040B-70
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Untitled
Abstract: No abstract text available
Text: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F040B
Am29F040
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically
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Am29F040B
Am29F040
32-Pin
TSR032
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29f040b
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — M inimizes system level power requirem ents ■ M anufactured on 0.35 pm process technology
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29F040
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29f040b
Abstract: No abstract text available
Text: ?'RE ! AM DB A m 29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics H 5.0 V ± 10% for read and write operations — Minimizes system level power requirements • Manufactured on 0.35 Jim process technology
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29F040B
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