AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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M6M800X1
Abstract: S-29453A
Text: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Instruction Set . 2
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Untitled
Abstract: No abstract text available
Text: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements
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Am29F017B
Am29F016C
20-year
40-pin
48-pin
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S-93L76A
Abstract: S-93L76AD0I-I8T1G S-93L76AD0I-J8T1G S-93L76AD0I-T8T1G S-93L76AD0I-K8T3U
Text: Rev.3.0_00 LOW VOLTAGE OPERATION CMOS SERIAL E2PROM S-93L76A The S-93L76A is a low voltage operating, high speed, low current consumption, 8 K-bit serial E2PROM with a wide operating voltage range. It is organized as 512-word x 16-bit respectively. Each is
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S-93L76A
S-93L76A
512-word
16-bit
S-93L76AD0I-I8T1G
S-93L76AD0I-J8T1G
S-93L76AD0I-T8T1G
S-93L76AD0I-K8T3U
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
M29W128FL
Memory Protection Devices
M29W128FH
JESD97
M29W128F
TSOP56
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SA10
Abstract: SA11 SA12 SA13 SA14 SA15
Text: PRELIMINARY Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation
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Am29F017B
Am29F016C
SA10
SA11
SA12
SA13
SA14
SA15
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation
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Am29F017D
Am29F016C
Am29F017B
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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M29W128GL
Abstract: M29W128GH70 M29W128G M29W128GL7
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29W128GL
M29W128GH70
M29W128G
M29W128GL7
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S-24C04B
Abstract: S-29130ADPA S-29430A S-93C46A
Text: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Instruction Set . 2
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M6M800X1
Abstract: 24C16a 24cxx S-29453A S-93C46A
Text: Contents Features. 1 Pin Assignment . 1 Block Diagram. 2 Instruction Set . 2
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AM29F016D-120
Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Text: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any
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Am29F016D
21444E5
AM29F016D-120
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
SA14
SA15
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AM29F032B-75
Abstract: AM29F032B-90 SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: Am29F032B Data Sheet Am29F032B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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Am29F032B
21610D8
AM29F032B-75
AM29F032B-90
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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Untitled
Abstract: No abstract text available
Text: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in
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M65KC512AB
512Mbit
133MHz
512Mbit
133MHz
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HYB25L256160AC
Abstract: HYB25L256160AF HYE25L256160AF
Text: Data Sheet, Rev. 1.3, Nov 2004 HYB25L256160A[F/C] HYE25L256160AF 256MBit Mobile-RAM Mobile-RAM Commercial Temperature Range Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.
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HYB25L256160A
HYE25L256160AF
256MBit
25L256160A
P-TFBGA-54
HYB25L256160AC
HYB25L256160AF
HYE25L256160AF
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lm814
Abstract: ID32-001
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06BFT-22
TC59LM814/06BFT
TC59LM814BFT
304-words
TC59LM806BFT
LM814/06B
FT-22
lm814
ID32-001
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29F032B
Abstract: m29f032b
Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology
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Am29F032B
20-year
29F032B
29F032B
m29f032b
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F040B
Am29F040
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AM29F032
Abstract: am29f032b-120 AM29F032B-90
Text: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F032B
20-year
40-pin
44-pin
AM29F032
am29f032b-120
AM29F032B-90
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24SA27
Abstract: AM29F017B
Text: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C
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29F016C
29F017B
24SA27
AM29F017B
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6514
Abstract: HM65 6514 ram
Text: HM-6514/883 Semiconductor 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri
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HM-6514/883
HM-6514/883
100kHz
6514
HM65
6514 ram
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C
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Am29F016B
20-year
29F016
44-pin
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Untitled
Abstract: No abstract text available
Text: AMD£I ADVANCE INFORMATION Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 w rite/erase cycles guaranteed ■ Package options
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Am29F032B
40-pin
44-pin
16-038-TSOPTS
29F032B
TSR040-40-Pin
16-038-TSOPTSR040
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation
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Am29F017B
Am29F016C
20-year
48-pin
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