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    PTFA210701E Price and Stock

    Infineon Technologies AG PTFA210701EV4XWSA1

    RF MOSFET LDMOS 30V H-36265-2
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    DigiKey PTFA210701EV4XWSA1 Tray
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    Infineon Technologies AG PTFA210701EV4R250XTMA1

    RF MOSFET LDMOS 30V H-36265-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA210701EV4R250XTMA1 Reel 250
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    Infineon Technologies AG PTFA210701EV4T500XWSA1

    RF MOSFET LDMOS 30V H-36265-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA210701EV4T500XWSA1 Reel
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    PTFA210701E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA210701E Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-36265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 80.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA210701EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 70W H-36265-2 Original PDF
    PTFA210701EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 70W H-36265-2 Original PDF
    PTFA210701EV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 70W H-36265-2 Original PDF
    PTFA210701EV4T500XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS Original PDF
    PTFA210701EV4XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 70W H-36265-2 Original PDF

    PTFA210701E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LM7805

    Abstract: H-30265-2 lm 2094
    Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PTFA210701E PTFA210701E 70-watt, H-30265-2 PTFA210701F* H-31265-2 LM7805 H-30265-2 lm 2094 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 214bstances. PDF

    PTFA210701E

    Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 BCP56 LM7805 RO4350 elna 50v lm 2094 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at


    Original     		PTFA210701E PTFA210701F PDF

    a210701e

    Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 a210701e 1K capacitor lm 2094 BCP56 LM7805 RO4350 PDF

    elna 50v

    Abstract: PTFA210701E PTFA210701F RO4350 BCP56 LM7805 resistor 51k
    Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PTFA210701E PTFA210701E 70-watt, H-30265-2 elna 50v PTFA210701F RO4350 BCP56 LM7805 resistor 51k PDF

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 PDF