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    A210701E Search Results

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    A210701E Price and Stock

    Infineon Technologies AG PTFA210701EV4XWSA1

    RF MOSFET LDMOS 30V H-36265-2
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    DigiKey PTFA210701EV4XWSA1 Tray
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    Infineon Technologies AG PTFA210701EV4T500XWSA1

    RF MOSFET LDMOS 30V H-36265-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA210701EV4T500XWSA1 Reel
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    Infineon Technologies AG PTFA210701EV4R250XTMA1

    RF MOSFET LDMOS 30V H-36265-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA210701EV4R250XTMA1 Reel 250
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    A210701E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM7805

    Abstract: H-30265-2 lm 2094
    Text: A210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210701E PTFA210701E 70-watt, H-30265-2 PTFA210701F* H-31265-2 LM7805 H-30265-2 lm 2094

    Untitled

    Abstract: No abstract text available
    Text: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PDF PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 214bstances.

    PTFA210701E

    Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
    Text: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PDF PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 BCP56 LM7805 RO4350 elna 50v lm 2094

    Untitled

    Abstract: No abstract text available
    Text: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at


    Original     		PDF PTFA210701E PTFA210701F

    a210701e

    Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
    Text: A210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PDF PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 a210701e 1K capacitor lm 2094 BCP56 LM7805 RO4350

    elna 50v

    Abstract: PTFA210701E PTFA210701F RO4350 BCP56 LM7805 resistor 51k
    Text: A210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The A210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210701E PTFA210701E 70-watt, H-30265-2 elna 50v PTFA210701F RO4350 BCP56 LM7805 resistor 51k