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    PSPICE MODEL FOR TTL Search Results

    PSPICE MODEL FOR TTL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    PSPICE MODEL FOR TTL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUF600X1

    Abstract: ISO130X ISO120X ACF2101M VoltageControlled Voltage Source INA106 equivalent INA114E BUF634X INA101E TRANSISTOR BC 141
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		A115E INA117E INA118E INA120E INA131E UAF42E OPA404E OPA445E OPA501E OPA502E BUF600X1 ISO130X ISO120X ACF2101M VoltageControlled Voltage Source INA106 equivalent INA114E BUF634X INA101E TRANSISTOR BC 141 PDF

    BUF600X1

    Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF

    7n10l

    Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
    Text: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD7N10LE, RFD7N10LESM 7n10l 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334 PDF

    tt 2246

    Abstract: Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L
    Text: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09870. Ordering Information PACKAGE 2246.3 Features These are N-channel power MOSFETs manufactured using


    Original     		RFD14N05L, RFD14N05LSM, RFP14N05L TA09870. tt 2246 Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L PDF

    16n06l

    Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
    Text: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027 PDF

    FP42N03L

    Abstract: f42n03l F42N03 RF1S42N03LSM RFP42N03L fp42n03 TA49030 AN9321 AN9322 RF1S42N03LSM9A
    Text: RFP42N03L, RF1S42N03LSM Data Sheet 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


    Original     		RFP42N03L, RF1S42N03LSM FP42N03L f42n03l F42N03 RF1S42N03LSM RFP42N03L fp42n03 TA49030 AN9321 AN9322 RF1S42N03LSM9A PDF

    mosfet motor dc 48v

    Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
    Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using


    Original     		RFD14N06L, RFD14N06LSM, RFP14N06L TA09870. mosfet motor dc 48v 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334 PDF

    16N03

    Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
    Text: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


    Original     		RFD16N03L, RFD16N03LSM TA49030. 16N03 TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334 PDF

    7N10LE

    Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
    Text: RFD7N10LE, RFD7N10LESM, RFP7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		RFD7N10LE, RFD7N10LESM, RFP7N10LE 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 7N10LE FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13 PDF

    7n10le

    Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
    Text: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected


    Original     		RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 1-800-4-HARRIS 7n10le AN7254 AN7260 RFD7N10LE pspice model for ttl TC247 PDF

    FP45N03L

    Abstract: F45N03L fp45n03 RFP45N03L RF1S45N03LSM TA49030 F45N03 relay 24v 30a AN7254 AN7260
    Text: RFP45N03L, RF1S45N03L, RF1S45N03LSM S E M I C O N D U C T O R 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 45A, 30V SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model


    Original     		RFP45N03L, RF1S45N03L, RF1S45N03LSM O-220AB O-262AA RF1S45N03LSM 1e-30 95e-4 FP45N03L F45N03L fp45n03 RFP45N03L TA49030 F45N03 relay 24v 30a AN7254 AN7260 PDF

    FP45N03L

    Abstract: fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss
    Text: [ /Title RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M /Subject (45A, 30V, 0.022 Ohm, RFP45N03L, RF1S45N03L, RF1S45N03LSM Semiconductor 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A, 30V • Peak Current vs Pulse Width Curve


    Original     		RFP45 RF1S45 N03LS RFP45N03L, RF1S45N03L, RF1S45N03LSM 1e-30 95e-4 82e-3 FP45N03L fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss PDF

    16n03l

    Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
    Text: RFD16N03L, RFD16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model


    Original     		RFD16N03L, RFD16N03LSM O-251AA O-252AA RFD16N03L RFD16N03LSM 1e-30 95e-4 92e-3 29e-5) 16n03l 16N03 RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 PDF

    14n05l

    Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
    Text: RFD14N05L, RFD14N05LSM, RFP14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model


    Original     		RFD14N05L, RFD14N05LSM, RFP14N05L O-220AB 175oC O-251AA RFP14N05L 1e-30 14n05l 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFD14N05L rs 355 integrated circuits FP14N05L AN7254 PDF

    pspice model for ttl

    Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
    Text: m HARRIS RFD7N10LE, RFD7N10LESM RFP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q


    OCR Scan     		RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFP7N10LE 1e-30 13e-3 pspice model for ttl 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB


    OCR Scan     		430Z271 RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 184e-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD7N10LE, RFD7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		RFD7N10LE, RFD7N10LESM 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 75e-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		RFD16N06LE, RFD16N06LESM PDF

    p30N06LE

    Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
    Text: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN


    OCR Scan     		RFP30N06LE O-220AB RFP30N06LE 07e-3 03e-7) 38e-3 64e-5) 75e-3 90e-6) p30N06LE P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		RFD16N03L, RFD16N03LSM 96e-9 1e-30 95e-4 92e-3 29e-5) 03e-3 45e-5) PDF

    f45n03l

    Abstract: FP45N03L
    Text: ? *3 2 S RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFP45N03L, RF1S45N03L, RF1S45N03LSM TA49030. Temperat96e-9 1e-30 95e-4 82e-3 17e-5) 03e-3 f45n03l FP45N03L PDF

    f42n03l

    Abstract: No abstract text available
    Text: ? *3 2 S RFP42N03L, RF1S42N03L, RF1S42N03LSM 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 42A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFP42N03L, RF1S42N03L, RF1S42N03LSM TA49030. 0-025i2 Tem96e-9 1e-30 95e-4 82e-3 17e-5) f42n03l PDF

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFD7N10LE, RFD7N10LESM, RFP7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFD7N10LE, RFD7N10LESM, RFP7N10LE 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) PDF

    16n06l

    Abstract: pspice model for ttl
    Text: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected


    OCR Scan     		RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl PDF