PRSP0032DA
Abstract: PRSP0032DA-A MM-550 MP525PC
Text: Magazine MP525PC code Renesas code PRSP0032DA-A Magazine PVC material Polyvinyl chloride Previous code Maximum storage No. IC/Magazine Maximum storage No. Magazine/Inner box Maximum storage No. IC/Inner box Packing form 32P2M-A 25 36 900 Dry pack Unit:mm
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MP525PC
PRSP0032DA-A
32P2M-A
PRSP0032DA
PRSP0032DA-A
MM-550
MP525PC
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4x20
Abstract: PRSP0032DA-A PSOP-32 SOP32 P-SOP32-11
Text: JEITA Package Code P-SOP32-11.4x20.75-1.27 RENESAS Code PRSP0032DA-A Previous Code 32P2M-A E 17 *1 F 1 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Index mark 16 c A2 *2 Reference Symbol D A S
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P-SOP32-11
PRSP0032DA-A
32P2M-A
4x20
PRSP0032DA-A
PSOP-32
SOP32
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Untitled
Abstract: No abstract text available
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0029EJ0300
072-word
32-pin
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R1LP0108ESP
Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0029EJ0200
072-word
32-pin
R1LP0108ESP
R1LP0108ESF
R1LP0108
R1LP0108ESP-7SI
R1LP0108ESF-7SR
R1LP0108ESP-7SR
R1LP0108es
r1lp0108esp-5si#s0
r1lp0108esp-7sr#b0
ttl 7202
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Untitled
Abstract: No abstract text available
Text: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher
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R1LV0108E
R10DS0049EJ0200
072-word
32-pin
outputs9044
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Untitled
Abstract: No abstract text available
Text: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0300 Rev.3.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher
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R1LV0108E
R10DS0049EJ0300
072-word
32-pin
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MTE3216H-32P2M-A
Abstract: PRSP0032DA-A PTSB0044GA-A 48P3R PTSA0032KA-B 1895 ic TE322 32P3H- E
Text: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B A 254 330 N 100 100
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32-mm
MTE3212H-32P3H-A
MTE3216H-28P3Y
MTE3216H-32P2M-A
MTE3216H-50P3W
MTE3224H-100P6Q-A
TE3216-16P
TE3216-30P
TE3224-7P
TE3224-15P
MTE3216H-32P2M-A
PRSP0032DA-A
PTSB0044GA-A
48P3R
PTSA0032KA-B
1895 ic
TE322
32P3H- E
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R1LV0108ESA-7SR
Abstract: r1lv0108 R1LV0108ESP R1LV0108ESP-7SI R1LV0108E R1LV0108ESF-5SI R1LV0108ESF-7SR R1LV0108ESF-7SI#S0 r1lv0108esa-7sr#s0 R1LV0108ESA
Text: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher
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R1LV0108E
R10DS0049EJ0200
072-word
32-pin
R1LV0108ESA-7SR
r1lv0108
R1LV0108ESP
R1LV0108ESP-7SI
R1LV0108ESF-5SI
R1LV0108ESF-7SR
R1LV0108ESF-7SI#S0
r1lv0108esa-7sr#s0
R1LV0108ESA
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