48P3R-B
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 1 48-12x18.4-0.50 RENESAS Code PTSA0048KA-A Previous Code 48P3R-B MASS[Typ.] 0.5g HD *2 D 48 *3 1 bp Index mark e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
|
Original
|
48-12x18
PTSA0048KA-A
48P3R-B
48P3R-B
|
PDF
|
48P3R-B
Abstract: 48pin TSOP 48P3R
Text: 48P3R-B EIAJ Package Code TSOP 48-P-1220-0.50 Plastic 48pin 12✕20mm TSOP JEDEC Code – Weight(g) Lead Material Alloy 42 e MD HD b2 e D 48 1 I2 E y Recommended Mount Pad b Symbol 24 25 A F A1 c A2 L1 A A1 A2 b c D E e HD L L1 y L Detail F b2 I2 MD Dimension in Millimeters
|
Original
|
48P3R-B
48-P-1220-0
48pin
48P3R-B
48pin TSOP
48P3R
|
PDF
|
48P3R
Abstract: No abstract text available
Text: 48P3R-C JEDEC Code – Weight g Lead Material Alloy 42 MD e EIAJ Package Code TSOP 48-P-1220-0.50 Plastic 48pin 12✕20mm TSOP( ) HD e b2 D 48 1 I2 Recommended Mount Pad E y b Symbol 24 25 A F A1 c A2 L1 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD Dimension in Millimeters
|
Original
|
48P3R-C
48-P-1220-0
48pin
48P3R
|
PDF
|
48P3R
Abstract: D483
Text: JEITA Package Code P-TSOP 1 48-12x18.4-0.50 RENESAS Code PTSA0048KA-B Previous Code 48P3R-C MASS[Typ.] 0.5g HD 1 D 48 *3 b p *2 Index mark *1 E y S e NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
|
Original
|
48-12x18
PTSA0048KA-B
48P3R-C
48P3R
D483
|
PDF
|
RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
|
Original
|
R1LV1616R
wordx16bit
REJ03C0101-0300Z
16-Mbit
1048576-words
16-bit,
52pin
RENESAS tft application notes
R1LV1616RBG-5S
R1LV1616RSA-5S
uTSOP
|
PDF
|
BA RV
Abstract: code lock circuit A1D14 RV80
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Original
|
M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
BA RV
code lock circuit
A1D14
RV80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
do-900
Unit2607
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
|
Original
|
R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Original
|
M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
|
PDF
|
432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P
|
Original
|
240K6X-A
240P6Y-A
240P6Z-A
255F7F
256F7B
256F7X-A/B
256P6J-E
256P6K-E
272F7X-A/B
281S8-C
432W6
48P4B
hssop
44P3W-R
28P0
5P5T
tsop 2-54
42P9R
70P3S-M
479F7G
|
PDF
|
R1LV1616HSA-4SI
Abstract: A17A R1LV1616HSA-5SI R1LV1616HSA-4LI
Text: R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM 1-Mword x 16-bit REJ03C0195-0100Z Rev. 1.00 Apr.22.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process
|
Original
|
R1LV1616H-I
16-bit)
REJ03C0195-0100Z
16-Mbit
16-bit.
48-pin
R1LV1616HSA-4SI
A17A
R1LV1616HSA-5SI
R1LV1616HSA-4LI
|
PDF
|
R1LV1616R
Abstract: R1LV1616RBG-5S R1LV1616RSA-5S R1LV1616R Series R1LV1616
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
M5M29KE131BVP
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M5M29KE131BVP Notice: This is not a final specification. Some parametric limits are subject to change. 134,217,728-BIT 16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Original
|
M5M29KE131BVP
728-BIT
216-WORD
608-WORD
16-BIT)
M5M29KE131BVP
64M-bit
48-pin
128M-bit
REJ03C0183-0010Z
|
PDF
|
100MHZ
Abstract: IC PACKAGE ELECTRICAL CHARACTERISTIC LCR 24p2n-a 136P6S-C
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES IC PACKAGE ELECTRICAL CHARACTERISTIC 6.2 IC PACKAGE ELECTRICAL CHARACTERISTICS Tables 1, 2 and 3 show electrical characteristics of packages of various types. They are called LCR values, which include Ls, Lm, Co, Cm,
|
Original
|
136P6S-C
100P6S-C
80P6N-C
208P6Y-A
64P6N-B
160P6E-A
44P6N-B
100MHZ
IC PACKAGE ELECTRICAL CHARACTERISTIC LCR
24p2n-a
136P6S-C
|
PDF
|
|
|
800H
Abstract: M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11
Text: MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS 271,299,072 BITS CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities
|
Original
|
M5M29F25611VP
M5M29F25611
800H
M5M29F25611VP
SA10
MITSUBISHI GATE ARRAY
mitsubishi S-A11
|
PDF
|
R1WV6416R
Abstract: 32MB SRAM 48P3R 52PTG 52-pin uTSOP 52-pin TSOP
Text: Preliminary R1WV6416R Series 64Mb Advanced LPSRAM 4M word x 16bit / 8M word x 8bit REJ03C0368-0001 Preliminary Rev.0.01 2008.03.24 Description The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
|
Original
|
R1WV6416R
16bit
REJ03C0368-0001
64-Mbit
304-word
16-bit,
48-pin
32MB SRAM
48P3R
52PTG
52-pin uTSOP
52-pin TSOP
|
PDF
|
0.4mm pitch BGA
Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
|
Original
|
R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
0.4mm pitch BGA
52-pin uTSOP
din 6887
R1LV1616RBG-5S
R1LV1616RSA-5S
|
PDF
|
WD04
Abstract: 24Blocks
Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO
|
Original
|
M5M29KB/T331AVP
432-BIT
304-WORD
152-WORD
16-BIT)
M5M29KB/T331AVP
432-bit
REJ03C0169
WD04
24Blocks
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0100 Rev.1.00 2009.05.07 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
|
Original
|
R1LV3216R
16bit
REJ03C0367-0100
32-Mbit
152-word
16-bit,
48-pin
|
PDF
|
3.3kOhm
Abstract: No abstract text available
Text: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO
|
Original
|
M5M29KB/T641AVP
864-BIT
608-WORD
304-WORD
16-BIT)
M5M29KB/T641AVP
864-bit
REJ03C0024
3.3kOhm
|
PDF
|
48P3R
Abstract: 52PTG R1LV3216R R1LV3216RSA-5S R1LV3216RSA-7S R1LV3216RSD-5S
Text: Preliminary R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0001 Preliminary Rev.0.01 2008.03.24 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
|
Original
|
R1LV3216R
16bit
REJ03C0367-0001
32-Mbit
152-word
16-bit,
48-pin
48P3R
52PTG
R1LV3216RSA-5S
R1LV3216RSA-7S
R1LV3216RSD-5S
|
PDF
|
M6M80011AL
Abstract: m6m80011 M6M80021FP 48P3R-B M6M80041P M5M28FB800VP-12 M6M80011AFP
Text: O R IE S • F L A S H MEMORIES CONTINUED Memory capacity Memory Configuration Power supply vottage Max. access «m e . Remarks Typ. power dissipation (mW) T w » No. (ml 51 2K X 1 6/ 1Mx8 ÍBGO) V cc = 2.7 to 3 .6 V V pp = 5 ± 0 .5 V (Dual power supply)
|
OCR Scan
|
32Kwordxl5.
10mmX
M5M28FB800VP-12!
M5M29FB/T008AVP-12V
40P3J-A
M5M29F016Fal
M5M29F6400ATP
48PIN
C/-20
M6M80011AL
M6M80011AL
m6m80011
M6M80021FP
48P3R-B
M6M80041P
M5M28FB800VP-12
M6M80011AFP
|
PDF
|
RV-80
Abstract: U150D
Text: MITSUBISHI LSIs M5M29FB/T800FP ,VP,R V-80,-10,-12 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION T he MITSUBISHI M5M 29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CM OS boot block Flash M emories suitable for
|
OCR Scan
|
M5M29FB/T800FP
608-BIT
576-WORD
288-WORD
BY16-BIT)
29FB/T800FP,
608-bit
44pin
48pin
RV-80
U150D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LDESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the
|
OCR Scan
|
M5M29FB/T800FP,
608-bit
44pin
48pin
16bit
100/120ns
|
PDF
|
