29F4000
Abstract: 29f400 MX29f4000 555H IN3064
Text: MX29F4000 AUTOMATIC PROGRAMMING AUTOMATIC ERASE ALGORITHM The MX29F4000 is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data
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MX29F4000
MX29F4000
DEC/20/1999
PM0629
29F4000
29f400
555H
IN3064
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am29ma16
Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M64V-XSBX ADVANCED 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M64V-XSBX
8Mx64
120ns
13x22mm
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W78M64V-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W78M64V-XSBX 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M64V-XSBX
8Mx64
120ns
13x22mm
W78M64V-XSBX
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W78M32V-XBX
Abstract: No abstract text available
Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
W78M32V-XBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
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10001000XXX
Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
10001000XXX
PWA with 555
W78M32V-XBX
SA139-SA142
SA175-SA178
SA187-SA190
SA163-SA166
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M64V-XSBX PRELIMINARY 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M64V-XSBX
8Mx64
120ns
13x22mm
8Mx64,
2x8Mx32
4x8Mx16
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M32V-XBX PRELIMINARY* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M32V-XBX
8Mx32
120ns
13x22mm
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M64V-XSBX PRELIMINARY 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M64V-XSBX
8Mx64
120ns
13x22mm
8Mx64,
2x8Mx32
4x8Mx16
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W78M64V-XSBX
Abstract: SA159-SA162 SA222
Text: White Electronic Designs W78M64V-XSBX 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M64V-XSBX
8Mx64
120ns
13x22mm
W78M64V-XSBX
SA159-SA162
SA222
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programming 29F400
Abstract: 29f800 29f400
Text: PA29F-S4-SO1-OT Data Sheet 44 pin SO socket/32 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction This adapter converts the AMD 29Fx00 in its 44 pin SOP package to a 32 pin DIP programming footprint for the Dataman S4 programmer. The adapter is made up of 3 sub-assemblies. They assemble via
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PA29F-S4-SO1-OT
socket/32
29Fx00
29F200
29F400
29F800
PA29F-S4A12
programming 29F400
29f800 29f400
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29f040b
Abstract: C167 flash programming programming 29F400 amd 29F010 flash memory C167 flash program flash 29f400 ROM. In-system programming c167 programming c166 TC75074 MCB167-NET
Text: Application Note Use External Flash ROM on the MCB167-NET APNT_169 OVERVIEW The Keil MCB167-NET board may be equipped with two 29F040B Flash devices that provide 1MB ROM. In-system programming is possible via the COM interface of the MCB167-NET. This application notes comes with an example project and shows you how to program such Flash
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MCB167-NET
MCB167-NET
29F040B
MCB167-NET.
Vision2/C166
29F010,
29F040,
C167 flash programming
programming 29F400
amd 29F010 flash memory
C167 flash program
flash 29f400
ROM. In-system programming c167
programming c166
TC75074
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M 29F400T M 29F400B raD»H[Lll e'inM l)i!lD(ei 4 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
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29F400T
29F400B
x8/x16,
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Untitled
Abstract: No abstract text available
Text: SGS-mOMSON M29F400T M29F400B MKMilLBSTBOllDIES 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical
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M29F400T
M29F400B
x8/x16,
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29F400BB
Abstract: 29F400BT M29F400BT
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 11 MEMORY BLOCKS
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M29F400BT
M29F400BB
512Kb
256Kb
TSOP48
M29F400BT,
29F400BB
29F400BT
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Untitled
Abstract: No abstract text available
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 11 MEMORY BLOCKS
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M29F400BT
M29F400BB
512Kb
256Kb
TSOP48
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F400T
M29F400B
x8/x16,
10jas
M29F400T,
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F400T
M29F400B
512Kb
256Kb
10jas
M29F40OT,
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29f400b
Abstract: No abstract text available
Text: M29F400T M29F400B SGS-THOMSON 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F400T
M29F400B
x8/x16,
29f400b
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A13D
Abstract: No abstract text available
Text: M29F400T M29F400B Æ T S G S -T H O M S O N * l i . IM M i[ L Ë (g W i[] S 4 Mb (x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME
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M29F400T
M29F400B
x8/x16,
TSOP48
AI01977
M29F400T,
29F400T
120ns
A13D
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Untitled
Abstract: No abstract text available
Text: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion
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HY29F400T/B
48-Pin
HY29F400
16-Bit)
G-90I
T-90I,
R-90I
G-90E,
T-90E,
R-90E
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sgs m29f400b
Abstract: M29F400 M29F400B M29F400T
Text: W , S G S -T H O M S O N k7# . M29F400T M29F400B 4 Mb x8/x16, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|us by Byte / 1 6|as by W ord typical
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M29F400T
M29F400B
x8/x16,
sgs m29f400b
M29F400
M29F400B
M29F400T
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