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    29F4000 Search Results

    29F4000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    29F4000 Macronix International 4M-BIT [512K x 8/256K x 16] CMOS FLASH MEMORY Original PDF

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    29F4000

    Abstract: marking macronix MX29f4000 555H
    Text: 29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz


    Original
    PDF MX29F4000 512KX8] 55/70/90/120ns 64K-Byte PM0629 MAY/29/2000 JUN/12/2001 29F4000 marking macronix MX29f4000 555H

    29F4000

    Abstract: 29F4000-70 29f400 MX29f4000 555H
    Text: 29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz


    Original
    PDF MX29F4000 512KX8] 55/70/90/120ns 64K-Byte DEC/20/1999 PM0629 MAY/29/2000 29F4000 29F4000-70 29f400 MX29f4000 555H

    29F4000

    Abstract: 29f400 MX29f4000 555H IN3064
    Text: 29F4000 AUTOMATIC PROGRAMMING AUTOMATIC ERASE ALGORITHM The 29F4000 is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data


    Original
    PDF MX29F4000 MX29F4000 DEC/20/1999 PM0629 29F4000 29f400 555H IN3064

    MX29f4000

    Abstract: 555H
    Text: 29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz


    Original
    PDF MX29F4000 512KX8] 55/70/90/120ns 64K-Byte DEC/20/1999 PM0629 MX29f4000 555H