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    PROCESS OF MOSFET Search Results

    PROCESS OF MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    PROCESS OF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m: Features General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the


    Original     		PDF FDZ191P FDZ191P

    Untitled

    Abstract: No abstract text available
    Text: FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET -20V, -1A, 85mΩ Features tm General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the


    Original     		PDF FDZ191P

    Untitled

    Abstract: No abstract text available
    Text: FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85mΩ Features General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the


    Original     		PDF FDZ191P

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    F1S25N06

    Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N
    Text: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP25N06, RF1S25N06SM TA09771. F1S25N06 AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N

    D16N05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. D16N05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFK70N06
    Text: RFK70N06 Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFK70N06 RFK70N06 175oC AN7254 AN7260 AN9321 AN9322

    f16n05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. f16n05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    mosfet 4430

    Abstract: 4433 mosfet rfd20n03sm9a RFD20N03 RFD20N03SM TB334 AN9321 AN9322
    Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD20N03, RFD20N03SM RFD20N03 RFD20N03SM TA49235. mosfet 4430 4433 mosfet rfd20n03sm9a TB334 AN9321 AN9322

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334
    Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFD14N05, RFD14N05SM TA09770.

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771.

    RFP22N10

    Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
    Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 TB334 RF1S22N10SM RF1S22N10SM9A

    F50n05l

    Abstract: f50n05 50130A SST12CP11-QVCE AN7254 RFP50N05L RFP50N05L9A TB334
    Text: RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFP50N05L F50n05l f50n05 50130A SST12CP11-QVCE AN7254 RFP50N05L RFP50N05L9A TB334

    AN9321

    Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
    Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD20N03, RFD20N03SM RFD20N03 RFD20N03SM TA49235. AN9321 AN9322 RFD20N03SM9A TB334 54E-1

    RFP22N10

    Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
    Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP22N10, RF1S22N10SM RFP22N10 RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10

    f14n05

    Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334
    Text: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFD14N05, RFD14N05SM TA09770. f14n05 RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334

    MARKING WL

    Abstract: ultra low igss pA FDZ193P
    Text: FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m: Features tm General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the


    Original     		PDF FDZ193P FDZ193P MARKING WL ultra low igss pA

    MIC4426AJ

    Abstract: IC4427A MIC4426CM high speed mosfet driver MIC4428AJ MIC4427AJ MIC4426AY MIC4428CM MIC4427CN MIC4428AJB
    Text: MIC4426/4427/4428 Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DMOS process. They are improved versions of the M IC426/427/428 family of buffer/


    OCR Scan     		PDF MIC4426/4427/4428 MIC4426/4427/4428 IC426/427/428 MIC4426AJ IC4427A MIC4426CM high speed mosfet driver MIC4428AJ MIC4427AJ MIC4426AY MIC4428CM MIC4427CN MIC4428AJB

    Untitled

    Abstract: No abstract text available
    Text: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of


    OCR Scan     		PDF MIC4423/4424/4425 MIC4423/4424/4425 MIC4426 IC426/427/428 IC4423/24/25 MIC4424XN/J 4424XW MIC4425xN/J 16-lead

    am 4428

    Abstract: 5962-8850308PX MIC4428AJ SMD MOSFET DRIVE 4427 8 PIN IC4426 5962-8850307PX MIC4427CN mic4428n SMD IC 751 - 8pin 5962-8850309PX
    Text: MIC4426/4427/4428 Dual 1.5A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DMOS process. They are improved versions of the MIC426/427/428 family of buffer/


    OCR Scan     		PDF MIC4426/4427/4428 IC4426/4427/4428 MIC426/427/428 am 4428 5962-8850308PX MIC4428AJ SMD MOSFET DRIVE 4427 8 PIN IC4426 5962-8850307PX MIC4427CN mic4428n SMD IC 751 - 8pin 5962-8850309PX

    IC4423

    Abstract: MIC4424AJ MIC4423BJ IC4423/4424/4425
    Text: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 family of


    OCR Scan     		PDF MIC4423/4424/4425 IC4423/4424/4425 IC4426 MIC426/427/428 IC4423/24/25 SS014 IC4423 MIC4424AJ MIC4423BJ

    ic4424

    Abstract: 5962-8850305PX
    Text: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 fam ily of


    OCR Scan     		PDF MIC4423/4424/4425 MIC4423/4424/4425 IC4426 IC426/427/428 MIC4423/24/25 withoutIC4423/4424/4425 MIC4423xWM MIC4424xN/J MIC4424xWM MIC4425xWM ic4424 5962-8850305PX

    5962-8850307PA

    Abstract: No abstract text available
    Text: MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DM OS process. They are improved versions of the MIC426/427/428 family of buffer/


    OCR Scan     		PDF MIC4426/4427/4428 MIC4426/4427/4428 MIC426/427/428 5962-8850307PA