Untitled
Abstract: No abstract text available
Text: FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m: Features General Description Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the
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FDZ191P
FDZ191P
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Untitled
Abstract: No abstract text available
Text: FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET -20V, -1A, 85mΩ Features tm General Description Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the
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FDZ191P
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Untitled
Abstract: No abstract text available
Text: FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85mΩ Features General Description Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the
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FDZ191P
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TH 2267
Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD16N05,
RFD16N05SM
RFD16N05
RFD16N05SM
TA09771.
TH 2267
AN7254
AN9321
AN9322
RFD16N05SM9A
TB334
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F1S25N06
Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N
Text: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFP25N06,
RF1S25N06SM
TA09771.
F1S25N06
AN9321
RF1S25N06SM
RF1S25N06SM9A
RFP25N06
TB334
F 407 Diode
F1S25N
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D16N05
Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD16N05,
RFD16N05SM
RFD16N05
RFD16N05SM
TA09771.
D16N05
AN7254
AN9321
AN9322
RFD16N05SM9A
TB334
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AN7254
Abstract: AN7260 AN9321 AN9322 RFK70N06
Text: RFK70N06 Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFK70N06
RFK70N06
175oC
AN7254
AN7260
AN9321
AN9322
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f16n05
Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD16N05,
RFD16N05SM
RFD16N05
RFD16N05SM
TA09771.
f16n05
AN7254
AN9321
AN9322
RFD16N05SM9A
TB334
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mosfet 4430
Abstract: 4433 mosfet rfd20n03sm9a RFD20N03 RFD20N03SM TB334 AN9321 AN9322
Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
mosfet 4430
4433 mosfet
rfd20n03sm9a
TB334
AN9321
AN9322
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RFP22N10
Abstract: RF1S22N10SM RF1S22N10SM9A TB334
Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFP22N10,
RF1S22N10SM
RFP22N10
RF1S22N10SM
RF1S22N10SM9A
TB334
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Untitled
Abstract: No abstract text available
Text: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding
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RFD14N05,
RFD14N05SM
TA09770.
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Untitled
Abstract: No abstract text available
Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD16N05,
RFD16N05SM
RFD16N05
RFD16N05SM
TA09771.
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RFP22N10
Abstract: TB334 RF1S22N10SM RF1S22N10SM9A
Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFP22N10,
RF1S22N10SM
RFP22N10
TB334
RF1S22N10SM
RF1S22N10SM9A
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F50n05l
Abstract: f50n05 50130A SST12CP11-QVCE AN7254 RFP50N05L RFP50N05L9A TB334
Text: RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,
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RFP50N05L
F50n05l
f50n05
50130A
SST12CP11-QVCE
AN7254
RFP50N05L
RFP50N05L9A
TB334
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AN9321
Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
AN9321
AN9322
RFD20N03SM9A
TB334
54E-1
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RFP22N10
Abstract: RF1S22N10SM RF1S22N10SM9A TB334 F1S22N10
Text: RFP22N10, RF1S22N10SM Data Sheet 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFP22N10,
RF1S22N10SM
RFP22N10
RF1S22N10SM
RF1S22N10SM9A
TB334
F1S22N10
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f14n05
Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334
Text: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding
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RFD14N05,
RFD14N05SM
TA09770.
f14n05
RFD14N05SM
AN7254
AN9321
AN9322
RFD14N05
RFD14N05SM9A
TB334
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MARKING WL
Abstract: ultra low igss pA FDZ193P
Text: FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m: Features tm General Description Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the
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FDZ193P
FDZ193P
MARKING WL
ultra low igss pA
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MIC4426AJ
Abstract: IC4427A MIC4426CM high speed mosfet driver MIC4428AJ MIC4427AJ MIC4426AY MIC4428CM MIC4427CN MIC4428AJB
Text: MIC4426/4427/4428 Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DMOS process. They are improved versions of the M IC426/427/428 family of buffer/
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MIC4426/4427/4428
MIC4426/4427/4428
IC426/427/428
MIC4426AJ
IC4427A
MIC4426CM
high speed mosfet driver
MIC4428AJ
MIC4427AJ
MIC4426AY
MIC4428CM
MIC4427CN
MIC4428AJB
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Untitled
Abstract: No abstract text available
Text: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of
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OCR Scan
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MIC4423/4424/4425
MIC4423/4424/4425
MIC4426
IC426/427/428
IC4423/24/25
MIC4424XN/J
4424XW
MIC4425xN/J
16-lead
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am 4428
Abstract: 5962-8850308PX MIC4428AJ SMD MOSFET DRIVE 4427 8 PIN IC4426 5962-8850307PX MIC4427CN mic4428n SMD IC 751 - 8pin 5962-8850309PX
Text: MIC4426/4427/4428 Dual 1.5A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DMOS process. They are improved versions of the MIC426/427/428 family of buffer/
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OCR Scan
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MIC4426/4427/4428
IC4426/4427/4428
MIC426/427/428
am 4428
5962-8850308PX
MIC4428AJ
SMD MOSFET DRIVE 4427 8 PIN
IC4426
5962-8850307PX
MIC4427CN
mic4428n
SMD IC 751 - 8pin
5962-8850309PX
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IC4423
Abstract: MIC4424AJ MIC4423BJ IC4423/4424/4425
Text: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 family of
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OCR Scan
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MIC4423/4424/4425
IC4423/4424/4425
IC4426
MIC426/427/428
IC4423/24/25
SS014
IC4423
MIC4424AJ
MIC4423BJ
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ic4424
Abstract: 5962-8850305PX
Text: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 fam ily of
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OCR Scan
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MIC4423/4424/4425
MIC4423/4424/4425
IC4426
IC426/427/428
MIC4423/24/25
withoutIC4423/4424/4425
MIC4423xWM
MIC4424xN/J
MIC4424xWM
MIC4425xWM
ic4424
5962-8850305PX
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PDF
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5962-8850307PA
Abstract: No abstract text available
Text: MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4426/4427/4428 family of buffer/drivers are built using a new, highly reliable BiCMOS/DM OS process. They are improved versions of the MIC426/427/428 family of buffer/
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OCR Scan
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MIC4426/4427/4428
MIC4426/4427/4428
MIC426/427/428
5962-8850307PA
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