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    F1S25N Search Results

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    F1S25N Price and Stock

    Rochester Electronics LLC RF1S25N06SM

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S25N06SM Bulk 460
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    Rochester Electronics LLC RF1S25N06SM9A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S25N06SM9A Bulk 437
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    Rochester Electronics LLC RF1S25N06SMR4643

    MOSFET N-CH 60V 25A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S25N06SMR4643 Bulk 460
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    Harris Semiconductor RF1S25N06

    25A, 60V, 0.047 OHM, N-Channel POWER MOSFET '
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    Rochester Electronics RF1S25N06 400 1
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    Harris Semiconductor RF1S25N06SM

    25A, 60V, 0.047 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S25N06SM 3,005 1
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    F1S25N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F1S25N06

    Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N
    Text: RFP25N06, F1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP25N06, RF1S25N06SM TA09771. F1S25N06 AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N

    F1S25N06

    Abstract: AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06
    Text: RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 25A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFP25N06, RF1S25N06, RF1S25N06SM O-220AB 175oC O-262AA RF1S25N06SM 1e-30 F1S25N06 AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM9A RFP25N06

    5n06

    Abstract: F1S25N06 302 s1b diode
    Text: RFP25N06, F1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


    Original     		PDF RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode

    F1S25N06

    Abstract: RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9
    Text: RFP25N06, F1S25N06, F1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs Features • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFP25N06, RF1S25N06, RF1S25N06SM TA09771. F1S25N06 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9

    F1S25N06

    Abstract: 183E-9 302 s1b diode 585E-3 45E-9
    Text: RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFP25N06, RF1S25N06, RF1S25N06SM TA09771. 175oMOS 1e-30 04e-3 04e-6) 85e-3 77e-5) F1S25N06 183E-9 302 s1b diode 585E-3 45E-9

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFP25N06, RF1S25N06, RF1S25N06SM 55e-10 1e-30 04e-3 04e-6) 85e-3 77e-5)

    Untitled

    Abstract: No abstract text available
    Text: ASSESS? RFP25N06, F1S25N06, F1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		PDF RFP25N06, RF1S25N06, RF1S25N06SM 1e-30 04e-3 04e-6) 85e-3 77e-5) 35e-3 77e-6)

    F1S25N

    Abstract: F1S25N06
    Text: RFP25N06, F1S25N06, F1S25N06SM ffì HAFURIS S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages J E D E C T O -2 2 0 A B • 25A, 60V • r DS ON = 0 .0 4 7 U • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFP25N06, RF1S25N06, RF1S25N06SM RF1S25N06SM F1S25N F1S25N06

    Untitled

    Abstract: No abstract text available
    Text: in t e r r ii RFP25N06, F1S25N06SM D a ta S h e e t 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFP25N06, RF1S25N06SM TA09771. RFP2SN06, RF1S25N06SM AN7254 AN7260.

    RFP25N06

    Abstract: No abstract text available
    Text: RFP25N06, F1S25N06, F1S25N06SM HARRIS S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFP25N06, RF1S25N06, RF1S25N06SM TA09771. 047i2 32e-13 72e-3 56e-3 13e-6 18e-9 RFP25N06