BLY93a
Abstract: No abstract text available
Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR
|
Original
|
BLY93A
30Vdc.
175MHzl
BLY93a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
|
Original
|
SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
|
Original
|
SGA9089Z
OT-89
SGA9089Z
50MHz
05GHz
44GHz
|
PDF
|
Transistor TL 31 AC
Abstract: j142
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
|
Original
|
SGA9089Z
OT-89
SGA9089Z
50MHz
44GHz
170mA
DS110606
Transistor TL 31 AC
j142
|
PDF
|
SiGe POWER TRANSISTOR
Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
|
Original
|
SGA9089Z
SGA9089Z
OT-89
50MHz
05GHz
44GHz
SiGe POWER TRANSISTOR
Gan hemt transistor RFMD
InP HBT transistor low noise
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
|
Original
|
SGA9189Z
OT-89
SGA9189Z
39dBm,
SGA9189Zâ
SGA9189ZSQ
SGA9189ZSR
|
PDF
|
SGA9289Z
Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This
|
Original
|
SGA9289Z
SGA9289Z
OT-89
SGA9289Z"
SGA9289ZSQ
SGA9289ZSR
SGA9289Z-EVB1
MARKING P2Z
SGA-9289z
rf transistor MARKING CODE 016
marking code of sot89 transistor
J4-87
transistor J9
|
PDF
|
SGA9289Z
Abstract: No abstract text available
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This
|
Original
|
SGA9289Z
OT-89
SGA9289Z
SGA9289Zâ
SGA9289ZSQ
SGA9289ZSR
SGA9289Z-EVB1
|
PDF
|
sga9189z
Abstract: marking p1z SGA-9189Z marking p1z transistor
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
|
Original
|
SGA9189Z
SGA9189Z
OT-89
39dBm,
SGA9189Z"
SGA9189ZSQ
SGA9189ZSR
marking p1z
SGA-9189Z
marking p1z transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
|
Original
|
SGA9189Z
SGA9189Z
OT-89
39dBm,
SGA9189ZSQ
SGA9189ZSR
SGA9189Z-EVB1
|
PDF
|
SGA9189
Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to
|
Original
|
SGA-9189
OT-89
39dBm,
SGA9189Z"
SGA9189"
SGA-9189Z
EDS-101497
SGA9189
marking p1z
130C
SGA9189Z
trace code marking RFMD
SGA-9189Z
marking p1z transistor
|
PDF
|
MARKING P2Z
Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to
|
Original
|
SGA-9289
OT-89
SGA9289Z"
SGA9289"
SGA-9289Z
EDS-101498
SGA-9289
MARKING P2Z
SGA9289
130C
J231 transistor
j392
sot89
|
PDF
|
SGA-9089Z
Abstract: 105051
Text: SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
|
Original
|
SGA-9089Z
OT-89
SGA-9089Z
50MHz
170mA
EDS-105051
SGA9089Z"
105051
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23
|
Original
|
FMMT591Q
J-STD-020
DS37010
|
PDF
|
|
|
CHT-TIT9570A
Abstract: sic normally on fet
Text: The Leader in High Temperature Semiconductor Solutions Version: 1.2 22-Apr-11 Last Modification Date CHT-THEMIS Power Transistor Driver Controller General description Features CHT-THEMIS is the controller block of the Power Transistor Driver solution CHTTHEMIS and CHT-ATLAS. The chipset is
|
Original
|
22-Apr-11
DS-100782
CHT-TIT9570A
sic normally on fet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
|
Original
|
BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
|
Original
|
BCP5616Q
OT223
500mV
BCP5316Q
DS36981
|
PDF
|
MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
|
Original
|
MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated
|
Original
|
SUM201MN
KSD-T6T002-001
|
PDF
|
16-2-472
Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.
|
Original
|
THN5601SF
OT-23F
THN5601SF
OT-23F
26dBm
900MHz
IS21I
16-2-472
161-717
45650
Transistor S 40442
SMD IC MARKING GP
marking am1 smd
25804
403 inductor coil smd
RF NPN POWER TRANSISTOR C 10-12 GHZ
hn6501
|
PDF
|
12V 10A BJT
Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
|
Original
|
SUM202MN
KSD-T6T001-001
12V 10A BJT
Logic Level Gate Drive mosfet
SUM202MN
SUM202
BJT IC Vce
power BJT PNP
BJT pnp 45V
Drive Base BJT
Low Capacitance bjt
BJT IC Vce 5v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
|
Original
|
SUM202MN
KSD-T6T001-002
|
PDF
|
tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
|
Original
|
DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
|
PDF
|
power BJT
Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT
|
Original
|
iW1810
power BJT
bjt specifications
IW1810
circuits using BJT
Flyback transformer Computer Monitor
bjt gate drive circuit
JB 71
JESD22-A114
bjt 100
Application Note AC-DC battery charger constant
|
PDF
|
