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    THN5601SF Search Results

    THN5601SF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    THN5601SF Tachyonics NPN SiGe RF POWER TRANSISTOR Original PDF

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    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501

    Transistor S 40442

    Abstract: THN5601SF 61529 78262 161-717 37185 177960 54368 120770 16-2-472
    Text: THN5601SF Semiconductor SiGe NPN Transistor Unit in mm SOT-23F □ Applications o VHF and UHF band medium power amplifier □ Features o 4.8 V operation o P1dB = 26 dBm at f = 900 MHz o GP = 9.0 dB at f = 900 MHz □ hFE Classification Pin Configuration Pin No


    Original     		PDF THN5601SF OT-23F 300GHz 500GHz 700GHz 900GHz 000GHz IS21I Transistor S 40442 THN5601SF 61529 78262 161-717 37185 177960 54368 120770 16-2-472