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    POWER TRANSISTOR 500 VOLTS Search Results

    POWER TRANSISTOR 500 VOLTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR 500 VOLTS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100MIL

    Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
    Text: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450


    Original     		UDR-500 UDR-500 100MIL) 180pf, 470pf, 100MIL FERRITE TOROID Johanson Piston Trimmer indiana general udr 70 F624-19 l44 transistor PDF

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


    Original     		MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E PDF

    55AX

    Abstract: No abstract text available
    Text: R.1.A.990601-HERIC 0708-500 500 Watts, 50 Volts, Pulsed Radar 600 - 750 MHz ADVANCED ISSUE GENERAL DESCRIPTION CASE OUTLINE 55AX The 0708-500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 600 - 750 MHz. The


    Original     		990601-HERIC 500mA 55AX PDF

    DME 40

    Abstract: No abstract text available
    Text: DME 500 500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The


    Original     		25oC2 DME 40 PDF

    TPR500

    Abstract: No abstract text available
    Text: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


    Original     		25oC2 TPR500 TPR500 PDF

    731 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts


    Original     		MRF158 MRF158 731 motorola PDF

    940 629 MOTOROLA 113

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		MRF158/D MRF158 940 629 MOTOROLA 113 Nippon capacitors PDF

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 PDF

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS


    Original     		MRF275G PDF

    mrf275g

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS BROADBAND


    Original     		MRF275G/D MRF275G MRF275G MRF275G/D PDF

    planar transformer theory

    Abstract: johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters
    Text: Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


    Original     		MRF275G/D MRF275G planar transformer theory johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters PDF

    ALC 655

    Abstract: ALC 665 ALC 887 MRF158 VK200
    Text: Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		MRF158/D MRF158 ALC 655 ALC 665 ALC 887 MRF158 VK200 PDF

    PTB 20200

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20063 150 Watts, 450 - 500 MHz RF Power Transistor Description Key Features The 20063 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 450-500 MHz frequency band. It is rated at 150 Watts minimum out­


    OCR Scan     		200mA PDF

    TIC 122 Transistor

    Abstract: transistor R1A
    Text: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    TIC55

    Abstract: PTB20062 tic 55
    Text: ERICSSON ^ PTB 20062 150 Watts, 450-500 MHz RF Power Transistor D escription The 20062 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 450 to 500 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.


    OCR Scan     		PDF

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11 PDF

    IGT8D21

    Abstract: IGT8E21
    Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		IGT8D21 60Msec, IGT8E21 PDF

    K105 transistor

    Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
    Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11 PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20062 150 Watts, 450 - 500 MHz Cellular Radio RF Power Transistor Key Features Description • • • • The 20062 is a class AB, NPN, common emitter R F Power Transistor intended for 25 V D C operation across the 450-500 M Hz frequency band. It is rated at 150 Watts minimum out­


    OCR Scan     		200mA, PDF

    MR918

    Abstract: ar317 MJF16010A AN-952 AM503 AN875 MUR8100 P6302 AN952 F-14E
    Text: MOTOROLA SC IME D I XSTRS/R F b3b?2SM 0QCID4M5 0 | Order this data sheet by MJF16010A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA r - 3 3 ~ i/ Designer's Data Sheet MJF16010A Full Pak IMPN Silicon Power Transistor POWER TRANSISTOR 15 AM PERES 500 VOLTS 50 WATTS


    OCR Scan     		MJF16010A/D r-33-n MJF16010A AN1040. CS4448 MJF16010A MR918 ar317 AN-952 AM503 AN875 MUR8100 P6302 AN952 F-14E PDF

    N15W

    Abstract: acrian 0510-50 ACRIAN 0510-50 acrian inc
    Text: 0182998 ACRIAN INC T7 ACRIAN INC DE I OlöSTTfi — GENERAL T - 3 'I - DGD1E33 S m m 0510-10 DESCRIPTION 10 WATTS - 28 VOLTS 500-1ÖÖÖ? MHz The 0510-10 is a common emitter silicon power transistor providing 10 watts of CW power across a 500-1000 frequency band. Gold metallization


    OCR Scan     		DGD1E33 Tc-25 T-33-0? N15W acrian 0510-50 ACRIAN 0510-50 acrian inc PDF

    ptb2011

    Abstract: No abstract text available
    Text: ERICSSON $ PTB 2011 0 50 Watts, 500-1000 MHz UHF Broadband Power Transistor Prelim inary Description Key Features The 20110 is a class AB, NPN, common emitter RF Power Tran­ sistor intended for 28 VDC operation across 500 -1000 MHz fre­ quency band. It is rated at 50 Watts minimum output power and


    OCR Scan     		200nv\x2 200mAx2 ptb2011 PDF