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    IGT6E11 Search Results

    IGT6E11 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGT6E11 General Electric Power Transistor Data Book 1985 Scan PDF
    IGT6E11 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IGT6E11 International Rectifier Transistor / IGBT Scan PDF

    IGT6E11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GE 639 transistor

    Abstract: IGT6D11 IGT6E11
    Text: Insulated-Gate Bipolar Transistors IGT6D11, IGT6E11 F ile N u m b e r N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2126 TER M IN A L DIAGRAM 10A, 400V and 500V Tds on = 0.27 Q Features: • L o w I / c e is a t i — 2.5V typ. @ 10A


    OCR Scan     		IGT6D11, IGT6E11 IGT6D11 IGT6E11 GE 639 transistor PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11 PDF