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    POWER RELAY N-CHANNEL MOSFET Search Results

    POWER RELAY N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER RELAY N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ET840

    Abstract: No abstract text available
    Text: ET840 9 Amps, ,500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    ET840 Amps500Volts ET840 O-220 O-220F O220F PDF

    TO252 rthjc

    Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
    Text: 4N60 4 Amps, ,600Volts N-Channel MOSFET • Description The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    Amps600Volts ET4N60 O-220 O-220F O220F TO252 rthjc 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET PDF

    Amps500Volts

    Abstract: No abstract text available
    Text: ET830 5 Amps, ,500Volts N-Channel MOSFET • Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    ET830 Amps500Volts ET830 O-220 O-220F O220F PDF

    7N60

    Abstract: No abstract text available
    Text: 7N60 7 Amps, ,600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    Amps600Volts ET7N60 O-220 O220F 7N60 PDF

    mosfet 60a 200v

    Abstract: ET73 N-channel enhancement 200V 60A
    Text: ET730 6 Amps, ,400Volts N-Channel MOSFET • Description The ET730 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    ET730 Amps400Volts ET730 O-220 O220F mosfet 60a 200v ET73 N-channel enhancement 200V 60A PDF

    88W51

    Abstract: ET630
    Text: ET630 9 Amps, 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    ET630 200Volts ET630 00A/s Width300s 88W51 PDF

    Untitled

    Abstract: No abstract text available
    Text: ET740 10.5 Amps, ,400Volts N-Channel MOSFET • Description The ET740 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    ET740 Amps400Volts ET740 O-220 O-220F O220F PDF

    S1-M10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay


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    UF830 O-220 O-220F O-220F1 O-262 O-263 O-251 O-252 QW-R502-046 S1-M10 PDF

    linear 50 Ohm Line Drivers

    Abstract: MOSFET 150V AN-7509
    Text: RFP15N15 Data Sheet January 2002 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


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    RFP15N15 TA09195. TB334 O-220AB RFP15N15 O-220 O-220 linear 50 Ohm Line Drivers MOSFET 150V AN-7509 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM


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    UK2996 O-220 UK2996 O-220F O-220F1 O-220F2 UK2996L-TA3-T UK2996G-TA3-T UK2996L-TF1-T UK2996G-TF1-T PDF

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Text: 2N60 N2 Amps,600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


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    2002/95/EC) 2SK2339 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


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    2002/95/EC) 2SK2339 PDF

    k3268

    Abstract: 2SK3268 K326
    Text: Power MOSFETs 2SK3268 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 0.8 max. 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1


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    2SK3268 k3268 2SK3268 K326 PDF

    Untitled

    Abstract: No abstract text available
    Text: A6861 Automotive 3-Phase Isolator MOSFET Driver Features and Benefits Description Applications The A6861 is an N-channel power MOSFET driver capable of controlling MOSFETs connected as a 3-phase solid state relay in phase-isolation applications. The A6861 is


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    A6861 A6861 PDF

    K3024

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


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    2002/95/EC) 2SK3024 K3024 PDF

    K3022

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


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    2002/95/EC) 2SK3022 K3022 PDF

    k3268

    Abstract: 2SK3268 k326
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3268 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


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    2002/95/EC) 2SK3268 k3268 2SK3268 k326 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE MOSFET VN10KCSM4 • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic Surface Mount LCC3 package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available


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    VN10KCSM4 300mW 150NT MO-041BA) PDF

    LG diode 831

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan
    IRF740 LG diode 831 PDF

    B44 transistor

    Abstract: fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed fo r high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan
    IRF840 IRF840 fcj3b7254 G1G2742 B44 transistor fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44 PDF

    14n50e

    Abstract: IRF450 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF450 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, con­ verters, solenoid and relay drivers.


    OCR Scan
    IRF450 O-204AA) IRF450 14n50e IRF450 transistor PDF

    BUZ11 motorola

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS III Power FET is designed for low voltage, high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan
    BUZ11 b3b725M BUZ11 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF610 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed pow er switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan
    IRF610 010272b PDF