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    POWER MOSFET LOGIC LEVEL Search Results

    POWER MOSFET LOGIC LEVEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET LOGIC LEVEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6901

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM


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    PDF 2N6901 O-205AF) 2N6901

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,


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    PDF HUF76105DK8 6105D

    intersil 76131SK8

    Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


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    PDF HUF76131SK8 mana15mm) MS-012AA 330mm EIA-481 intersil 76131SK8 AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76121SK8

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


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    PDF HUF76113T3ST

    rs808

    Abstract: 725P AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
    Text: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET [ /Title HUF7 6112S K8 /Subject (7.5A, 30V, 0.026 Ohm, NChannel, Logic Level Power MOSFET) /Autho r () /Keywords (7.5A, 30V, 0.026 Ohm, NChannel,


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    PDF HUF76112SK8 6112S HUF76112SK8 rs808 725P AN7254 AN9321 AN9322 HUF76112SK8T MS-012AA TB334 pspice model gate driver

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
    Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337

    n13 sot 23

    Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


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    PDF HUF76113T3ST OT-223 330mm 100mm EIA-481 n13 sot 23 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


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    PDF HUF76105DK8

    TA7613

    Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76131SK8 TA7613 AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    3055L transistor

    Abstract: Mosfet Sot223
    Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,


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    PDF RFT3055LE TA49158. RFT3055LE OT-223 330mm EIA-481 3055L transistor Mosfet Sot223

    AN9321

    Abstract: AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76131SK8 AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370
    Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76121SK8 AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121
    Text: HUF76113SK8 Data Sheet December 2001 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    76113

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76113T3ST 76113 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    TB370

    Abstract: AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA
    Text: HUF76121SK8 Data Sheet December 2001 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76121SK8 TB370 AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA

    TA7611

    Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
    Text: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76113T3ST TA7611 TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4448.2 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


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    PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37

    Saber

    Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
    Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the


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    PDF HUF76113T3ST TB334, OT-223 Saber TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST

    61E2

    Abstract: No abstract text available
    Text: HUF76131SK8 November 1998 Data Sheet 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative w UltraFET process. This advanced


    OCR Scan
    PDF HUF76131SK8 HUF76131SK8 MS-012AA 61E2