IEC60747-8
Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
AN11158
IEC60747-8
nxp mosfet soa derating
AN10273
iec60134
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Untitled
Abstract: No abstract text available
Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors
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AN11158
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Text: Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors require a large base current to maintain the saturation area; however, power
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Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
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jfet cascode
Abstract: mosfet equivalent AN-7502 mos cascode AN72 RFM15N15 high transconductance JFET Fairchild presentation
Text: Power MOSFET Switching Waveforms: A New Insight Application Note [ /Title AN72 60 /Subject (Power MOSFET Switch ing Waveforms: A New Insight ) /Autho r () /Keywords (Intersil Corporation, semiconductor) /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines
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Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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power switching with IRFP450 schematic
Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2
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AN-1005
06-Dec-11
power switching with IRFP450 schematic
POWER MOSFET CIRCUIT
BJT, General electric
Linear Application Note
FET IRFP450
Avalanche
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202370A
Abstract: DC MOTOR DRIVE USING BUCK CONVERTER
Text: APPLICATION NOTE Features of the AAT4910 28V Half-Bridge, Dual N-Channel MOSFET Driver Introduction The AAT4910 FastSwitch is a member of Skyworks Application Specific Power MOSFET ASPM™ product family. It is a half bridge buffered power stage that operates with an input voltage range of 2.7V to 5.5V. The device is designed
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AAT4910
02370A
202370A
DC MOTOR DRIVE USING BUCK CONVERTER
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments,
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UT6302
UT6302G-AE3-R
OT-23
6302G
QW-R502-363
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TEMPFET
Abstract: Thermal Resistance Calculation TO
Text: Automotive Power Semiconductors Application Note Determining the thermal resistance Rth CA of an application. by Stefan Burges, Christian Arndt If a power MOSFET in used in an application in which high power losses occur (e.g. linear control), it must be ensured that the losses that are dissipated via the heatsink
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AN10273
Abstract: AN10 BUK764R0-55B 681688
Text: AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Rev. 02 — 27 March 2009 Application note Document information Info Content Keywords Power MOSFET, single-shot, avalanche, ruggedness, safe operating condition Abstract Power MOSFETs are normally measured based on single-shot
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Abstract: No abstract text available
Text: AN11156 Using Power MOSFET Zth Curves Rev. 1 — 28 September 2012 Application note Document information Info Content Keywords Power MOSFET, Zth curves, Junction temperature, Single shot, Rectangular pulse, Composite waveform, Pulse burst, Zth j-mb , Superimposition, Thermal impedance
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TRANSISTOR ww1
Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY
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BLF548
SCA57
TRANSISTOR ww1
mosfet handbook
trimmer 2-18 pf
ww1 45 transistor
trafo toroidal
AN98021
KDI-PPT820-75-3
4814 mosfet chip
philips catalog potentiometer 2322 350
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Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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IRF544
Abstract: high side MOSFET driver with charge pump mosfet driver inductive loads Light-Dependent Resistor Light-Dependent charge pump mosfet driver irf5304 4N35 application note mosfet ac switch IRF530
Text: Application Note 1 Micrel Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power MOSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor
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MIC5011
MIC5011
INPUT100V
74C04
IRF544
high side MOSFET driver with charge pump
mosfet driver inductive loads
Light-Dependent Resistor
Light-Dependent
charge pump mosfet driver
irf5304
4N35 application note
mosfet ac switch
IRF530
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AN-1084
Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5
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AN-1084
Power MOSFET Basics
HEXFET Power MOSFET designer manual
HEXFET Power MOSFET Designers Manual
BJT with i-v characteristics
MOSFET designer manual
N-Channel jfet 100V depletion
N-Channel jfet 500V depletion
n channel depletion MOSFET
AN10841
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.
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UT6302L-AE3-R
UT6302G-AE3-R
OT-23-3
OT-23
QW-R502-363
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Abstract: No abstract text available
Text: APTMC120AM08CD3AG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 10mΩ max @ Tj = 25°C ID = 260A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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smd 2sd882
Abstract: 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v
Text: UM0674 Application note STEVAL-ISA054V1, 100 W SMPS based on the STW9N150 Power MOSFET and UC3844B for industrial applications Introduction This document introduces a solution for industrial power supplies. It takes advantage of the high voltage Power MOSFET, i.e. 1500 V breakdown voltage, to optimize the operation of
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UC3844B.
L5970D,
smd 2sd882
2SB772 SMD
47nF-X2
UM0674
uc3844b application note
2SB772 equivalent
MAGNETICA TRANSFORMER
230VAC to 5V DC POWER SUPPLY with transformer, br
2sd882 equivalent
68uf450v
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Text: PD - 91814A IRFSL9N60A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. l VDSS Rds(on) max ID 0.75Ω 9.2A 600V
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IRFSL9N60A
08-Mar-07
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IRFSL9N60A
Abstract: No abstract text available
Text: PD - 91814A IRFSL9N60A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. l VDSS Rds(on) max ID 0.75Ω 9.2A 600V
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IRFSL9N60A
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Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
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