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    POWER DISSIPATION IN POWER STAGE Search Results

    POWER DISSIPATION IN POWER STAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER DISSIPATION IN POWER STAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RCA-47

    Abstract: rca tube 47 rca 47
    Text: RCA-47 POWER-AMPLIFIER PENTODE The 47 is a power-amplifier pen­ tode for use in the audio output stage of a-c receivers. In comparison with three-electrode Class A power ampli­ fiers of the same plate dissipation, the 47 is capable of greater output with the additional feature of higher amplification.


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    RCA-47 RCA-47 rca tube 47 rca 47 PDF

    TDA8920BJ

    Abstract: TDA8920BTH TDA892*j TDA8920B TDA8920BTH class d amplifier schematic diagram AES17 DBS23P HSOP24 001aab218 001aab226
    Text: TDA8920B 2 x 100 W class-D power amplifier Rev. 02 — 07 November 2005 Product data sheet 1. General description The TDA8920B is a high efficiency class-D audio power amplifier with very low dissipation. The typical output power is 2 × 100 W. The device is available in the HSOP24 power package and in the DBS23P through-hole


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    TDA8920B TDA8920B HSOP24 DBS23P TDA8920BJ TDA8920BTH TDA892*j TDA8920BTH class d amplifier schematic diagram AES17 001aab218 001aab226 PDF

    4438-1

    Abstract: ACT4438 ACT4438-1
    Text: ACT4438–1 Transceiver for MIL-STD-1553 / 1760 in a Chipscale Package Preliminary Features CIRCUIT TECHNOLOGY www.aeroflex.com • Transceiver meets military data bus requirements, MIL-STD-1553 and MIL-STD-1760 • Low power dissipation at full output power


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    ACT4438 MIL-STD-1553 MIL-STD-1760 THE-1553 SCD4438-1 4438-1 ACT4438-1 PDF

    48 volt 25 amp smps circuit diagram

    Abstract: 40 volt output smps reference design TL431 bsc flyback universal OPTO MOC8102 s380 AN1594 MC33364 MC33364D MC33364D1
    Text: MC33364 Critical Conduction GreenLine SMPS Controller The MC33364 series are variable frequency SMPS controllers that operate in the critical conduction mode. They are optimized for high density power supplies requiring minimum board area, reduced component count, and low power dissipation. Integration of the high


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    MC33364 MC33364 MC33364D1 r14525 MC33364/D 48 volt 25 amp smps circuit diagram 40 volt output smps reference design TL431 bsc flyback universal OPTO MOC8102 s380 AN1594 MC33364D PDF

    BCP5616

    Abstract: BCP5410
    Text: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V   IC = 1A High Continuous Collector Current   ICM = 2A Peak Pulse Current   2W Power Dissipation Low Saturation Voltage VCE sat < 500mV @ 0.5A


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    OT223 500mV J-STD-020 MIL-STD-202, BCP51, DS35367 BCP5616 BCP5410 PDF

    AN1594

    Abstract: TL431 B2X84 bsc flyback universal MC33364 MC33364D MC33364D1 MC33364D1G MC33364D1R2 MC33364D1R2G
    Text: MC33364 Critical Conduction GreenLinet SMPS Controller The MC33364 series are variable frequency SMPS controllers that operate in the critical conduction mode. They are optimized for high density power supplies requiring minimum board area, reduced component count, and low power dissipation. Integration of the high


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    MC33364 MC33364 MC33364D1 MC33364/D AN1594 TL431 B2X84 bsc flyback universal MC33364D MC33364D1G MC33364D1R2 MC33364D1R2G PDF

    2TX650

    Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
    Text: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.


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    ZTX4555 ZTX555 ZTX454 ZTX554 ZTX4535 ZTX553 ZTX452 SO-94 SO-95 SO-97 2TX650 BFS97 BFS98 ZTX337 ZTX338 MPSA06 MPSA56 ZTX451 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD44237P, HD44238P Single Chip CODEC with Filters COMBO Features • • Single Chip CMOS CODEC with Filter in 16-pins DIL Package Power Supply Voltage ± 5 V ± 5%, Low Power Dissipation (50 mW typ) • Follows A-Law (HD44237P)/|i-law(HD44238P) • - Exceeds CCITT and D4 Specifications


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    HD44237P, HD44238P 16-pins HD44237P HD44238P) HD44237P/HD44238P PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNRF1AH Silicon PNP epitaxial planar type For digital circuits Unit: mm • Features 3 VCBO Collector-emitter voltage (Base open) VCEO Total power dissipation


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    2002/95/EC) PDF

    14069UG

    Abstract: MC14069UBCPG 14069u MC14069UBC MC14069U
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB PDIP-14 SOIC-14 14069UG MC14069UBCP CD4069UB MC14069UB/D MC14069UBCPG 14069u MC14069UBC MC14069U PDF

    etal osa

    Abstract: No abstract text available
    Text: electronic June 1992 ASIC HI-REL DATA SHEET CMOS FULL CUSTOM FOUNDRY FEATURES WIDE PROCESS RANGE IN CMOS : FROM 3UM TO SUBMICRON CHANNEL LENGTH POSSIBLE USE OF EXISTING BLOCKS OR GENERATORS DEVELOPED BY MHS HIGH SPEED, LOW POWER DISSIPATION TOPOLOGICAL DESIGN RULES AND SPICE


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    sabfl45b etal osa PDF

    14069ug

    Abstract: 14069ug datasheet MC14069UBCP 14069u MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG 14069
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB SOIC-14 MC14069UB/D 14069ug 14069ug datasheet MC14069UBCP 14069u MC14069UBCPG CD4069UB MC14069UBD MC14069UBDG 14069 PDF

    74LS08 truth table

    Abstract: logic symbol 74LS08 74LS08 PIN TC74HC08A
    Text: TOSHIBA TC74HC08AP/AF/AFN Quad 2-In p u t NAND G ate The TC74HC08A is a high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


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    TC74HC08AP/AF/AFN TC74HC08A TC74HC/HCT 74LS08 truth table logic symbol 74LS08 74LS08 PIN PDF

    74hc164

    Abstract: 74HC164 equivalent 74VHC164 74VHC164M 74VHC164MTC 74VHC164N 74VHC164SJ M14A M14D MTC14
    Text: 74VHC164 8-Bit Serial-In, Parallel-Out Shift Register Features General Description • High Speed: fMAX = 175MHz at VCC = 5V ■ Low power dissipation: ICC = 4µA max. at TA = 25°C The VHC164 is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology. It


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    74VHC164 175MHz VHC164 74VHC164 74hc164 74HC164 equivalent 74VHC164M 74VHC164MTC 74VHC164N 74VHC164SJ M14A M14D MTC14 PDF

    74Ls08 iec

    Abstract: tc74hc08
    Text: TC74HC08AP/AF/AFN QUAD 2-INPUT A ND GATE The TC74HC08A is a high speed CMOS 2-IN PU T AND GATE fabricated with silicon gate C^MOS technology. It achieves the high speed Operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissipation.


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    TC74HC08AP/AF/AFN TC74HC08A HC-145 74Ls08 iec tc74hc08 PDF

    74HCu04 oscillator application note

    Abstract: 74HCU04
    Text: 74HCU04 SSI J V H E X IN V E R T E R FEATURES • • Output capability: standard I q c category: SSI SYMBOL PARAMETER CONDITIONS tPHL^ t PLH propagation delay nA to nY CL = 15 pF C| input capacitance CPD power dissipation capacitance per inverter VCC = 5


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    74HCU04 74HCu04 oscillator application note PDF

    Untitled

    Abstract: No abstract text available
    Text: DS90C031 LVDS Quad CMOS Differential Line Driver General Description Features The DS90C031 is a quad CMOS differential line driver designed for applications requiring ultra low power dissipation and high data rates. The device is designed to support data rates in excess of 155.5 Mbps 77.7 MHz utilizing Low Voltage Differential Signaling (LVDS) technology.


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    DS90C031 AN-977: 5-Aug-2002] PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HCT02AP/AF Q U A D 2 - I N P U T NOR G A T E The TC74HCT02A is a high speed CMOS 2-IN PU T NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissipation.


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    TC74HCT02AP/AF TC74HCT02A TC74HCT02AP/AF-3 PDF

    TC74HC30A

    Abstract: No abstract text available
    Text: TC74HC30AP/AF/AFN 8 - I N P U T NAND GATE The TC74HC30A is a high speed CMOS 8-IN P U T NAND GATE fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation sim ilar to equivalent L ST T L while maintaining the CMOS low power dissipation.


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    TC74HC30AP/AF/AFN TC74HC30A \iL285i HC-173 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4072AP/AF D U A L 4 - I N P U T OR G A TE The TC74HC4072A is a high speed CMOS 4-IN P U T OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissipation.


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    TC74HC4072AP/AF TC74HC4072A HC-732 PDF

    LM2415T

    Abstract: LM2415 LM1279 LM1282 LM2405 CRT MONITOR SCHEMATIC DIAGRAM Signal Path Designer LM240X
    Text: LM2415 Monolithic Triple 5.5 ns CRT Driver General Description The LM2415 is an integrated high voltage CRT driver circuit designed for use in color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the RGB cathodes of a CRT. Each channel has its gain internally set to −14 and can drive CRT capacitive loads as well as resistive loads present in other applications, limited only by the package’s power dissipation.


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    LM2415 LM2415 11-lead O-220 LM1279 LM1282 LM2415T LM2405 CRT MONITOR SCHEMATIC DIAGRAM Signal Path Designer LM240X PDF

    Untitled

    Abstract: No abstract text available
    Text: > k l > J X I > k l 1 0 - Bi t , 4 0 M s p s , T T L - O u t p u t A D C Description Inputs and outputs are TTL com patible. An overrange o u tp u t is p ro v id e d to in d ic a te o ve rflo w c o n d itio n s . O utput data format is straight binary. Power dissipation


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    MAX1161 10-bit, PDF

    100W AUDIO AMPLIFIER using IC TDA7294

    Abstract: tda7294 bridge TDA7294 TDA7294 power supply 40v Audio amplifier class AB single supply tda7294 application note TDA7294HS TDA7294 FUNCTION datasheet tda7294 100w stereo audio Amplifier tda7294
    Text: TDA7294 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE ±40V DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 100W MUSIC POWER) MUTING/STAND-BY FUNCTIONS NO SWITCH ON/OFF NOISE NO BOUCHEROT CELLS VERY LOW DISTORTION VERY LOW NOISE


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    TDA7294 TDA7294 Multiwatt15 Multiwatt15V Multiwatt15H TDA7294V TDA7294HS 100W AUDIO AMPLIFIER using IC TDA7294 tda7294 bridge TDA7294 power supply 40v Audio amplifier class AB single supply tda7294 application note TDA7294HS TDA7294 FUNCTION datasheet tda7294 100w stereo audio Amplifier tda7294 PDF

    L4970

    Abstract: L6203 SGS L6203 L296 L6202 L6280 SGS-Thomson telephone ic
    Text: APPLICATION NOTE SMART POWER TECHNOLOGY EVOLVES TO HIGHER LEVELS OF COMPLEXITY by Bruno Murari Smart power devices are the shooting stars in power semiconductors, because it’s possible to integrate digital and analog functions together with multiple power stages on the same silicon chip.


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    PDF