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    BCP56TA

    Abstract: BCP55-16 BCP51 BCP5516TA bcp54ta BCP5410
    Text: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features • • • • • • • • Mechanical Data • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original
    PDF OT223 500mV BCP51, AEC-Q101 J-STD-020 DS35367 BCP56TA BCP55-16 BCP51 BCP5516TA bcp54ta BCP5410

    BCP5616QTA

    Abstract: AECQ-101 5616 BCP5410
    Text: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V • • IC = 1A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. • ICM = 2A Peak Pulse Current •


    Original
    PDF OT223 500mV BCP51, AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS35367 BCP5616QTA AECQ-101 5616 BCP5410

    BCP5616

    Abstract: BCP5410
    Text: BCP 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Mechanical Data Features • • • • • • • • • • IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original
    PDF OT223 500mV BCP51, AEC-Q101 J-STD-020 DS35367 BCP5616 BCP5410

    BCP5616

    Abstract: BCP5410
    Text: BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data • BVCEO > 45V, 60V & 80V   IC = 1A High Continuous Collector Current   ICM = 2A Peak Pulse Current   2W Power Dissipation Low Saturation Voltage VCE sat < 500mV @ 0.5A


    Original
    PDF OT223 500mV J-STD-020 MIL-STD-202, BCP51, DS35367 BCP5616 BCP5410