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    POWER AMPLIFIRE Search Results

    POWER AMPLIFIRE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIRE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba s-au80

    Abstract: S-AU80 Rf power amplifire zg 36 zg 32 zg transistor
    Text: S-AU80 TOSHIBA RF Power Amplifire Module S-AU80 900 MHz Band Amplifier Applications GSM • Output Power: Po = 35.0 dBmW (typ.) • Power Gain: Gp = 35.0 dB (typ.) • Total Efficiency: ηT = 43% (typ.) Unit: mm JEDEC  EIAJ  TOSHIBA Maximum Ratings (Ta = 25°C)


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    PDF S-AU80 toshiba s-au80 S-AU80 Rf power amplifire zg 36 zg 32 zg transistor

    midium power uhf transistor

    Abstract: KGF2511 marking ACP
    Text: This version: Oct. 1998 Previous version: — E2Q0056-18-X1 ¡ electronic components KGF2511 ¡ electronic components KGF2511 Midium Power Amplifier for UHF band GENERAL DESCRIPTION The KGF2511 is a midium power amplifier for UHF band that features high output power, high


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    PDF E2Q0056-18-X1 KGF2511 KGF2511 900MHz 1000pF 10000pF midium power uhf transistor marking ACP

    KGF2512

    Abstract: 100w amplifire
    Text: This version: Oct. 1998 Previous version: — E2Q0057-18-X1 ¡ electronic components KGF2512 ¡ electronic components KGF2512 Midium Power Amplifier for L-band GENERAL DESCRIPTION The KGF2512 is a midium power amplifier for L-band that features high output power, high


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    PDF E2Q0057-18-X1 KGF2512 KGF2512 1500MHz 10dBm 50kHz 100w amplifire

    FQH70N15

    Abstract: No abstract text available
    Text: TM FQH70N15 N-Channel Power MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQH70N15 FQH70N15

    FQH90N15

    Abstract: F109 FQA90N15 Audio Amplifire mosfet amplifire
    Text: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQH90N15 FQA90N15 FQA90N15 F109 Audio Amplifire mosfet amplifire

    how to make a amplifire

    Abstract: F109 FQA90N15 FQH90N15
    Text: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQH90N15 FQA90N15 FQA90N15 how to make a amplifire F109

    Untitled

    Abstract: No abstract text available
    Text: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQH90N15 FQA90N15 FQA90N15

    how to make a amplifire

    Abstract: FQA90N15 FQH90N15 amplifir audio amplifire
    Text: FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 220 nC)


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    PDF FQH90N15 FQA90N15 how to make a amplifire FQA90N15 amplifir audio amplifire

    KC301

    Abstract: "line AMPLIFIER" 5.1 channel audio power amplifire circuit AN7515SH AN7516SH "Headphone Amplifier" Audio IC BASS BOOST head phone amplifier
    Text: ICs for Audio Common Use AN7516SH Audio signal processing IC for notebook PC • Overview Unit: mm AN7516SH has a speaker power amplifier, headphone power amplifier, line amplifier, electric volume, 3-dimensional Spatializer and a bass boost circuit for notebook PC. This IC adopts a small thin


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    PDF AN7516SH AN7516SH KC301 "line AMPLIFIER" 5.1 channel audio power amplifire circuit AN7515SH "Headphone Amplifier" Audio IC BASS BOOST head phone amplifier

    spatializer ic circuit

    Abstract: No abstract text available
    Text: ICs for Audio Common Use AN7516SH Audio signal processing IC for notebook PC • Overview Unit: mm AN7516SH has a speaker power amplifier, headphone power amplifier, line amplifier, electric volume, 3-dimensional Spatializer and a bass boost circuit for notebook PC. This IC adopts a small thin


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    PDF AN7516SH AN7516SH AN7515SH spatializer ic circuit

    "line AMPLIFIER"

    Abstract: AN7515SH AN7516SH main line amplifire spatializer ic circuit spatializer block diagram
    Text: ICs for Audio Common Use AN7516SH Audio signal processing IC for notebook PC • Overview Unit: mm AN7516SH has a speaker power amplifier, headphone power amplifier, line amplifier, electric volume, 3-dimensional Spatializer and a bass boost circuit for notebook PC. This IC adopts a small thin


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    PDF AN7516SH AN7516SH "line AMPLIFIER" AN7515SH main line amplifire spatializer ic circuit spatializer block diagram

    ue1001

    Abstract: No abstract text available
    Text: ICs for Audio Common Use AN7516SH Audio signal processing IC for notebook PC • Overview Unit: mm AN7516SH has a speaker power amplifier, headphone power amplifier, line amplifier, electric volume, 3-dimensional Spatializer and a bass boost circuit for notebook PC. This IC adopts a small thin


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    PDF AN7516SH AN7516SH AN7515SH ue1001

    AN17000A

    Abstract: "Headphone Amplifier" Audio IC BASS BOOST "line AMPLIFIER" variable registors VHPR 80 HP k1941
    Text: ICs for Audio Common Use AN17000A Audio signal processing IC for notebook PC • Overview Unit: mm Area of no resin flash 14.00±0.10 6.90 (5.45) 29 0.15±0.05 (1.00) (2.25) 56 (3.70) 6.10±0.10 8.10±0.20 AN17000A has a speaker power amplifier, headphone power amplifier, line amplifier, electronic


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    PDF AN17000A AN17000A "Headphone Amplifier" Audio IC BASS BOOST "line AMPLIFIER" variable registors VHPR 80 HP k1941

    AN17000A

    Abstract: "line AMPLIFIER"
    Text: ICs for Audio Common Use AN17000A Audio signal processing IC for notebook PC • Overview Unit: mm Area of no resin flash 14.00±0.10 6.90 (5.45) M Di ain sc te on na tin nc ue e/ d AN17000A has a speaker power amplifier, headphone power amplifier, line amplifier, electronic


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    PDF AN17000A AN17000A "line AMPLIFIER"

    H7C18

    Abstract: 5.1 amplifire circuit diagram Hitachi DSA00279
    Text: HA17384DPS/EPS, HA17385EPS High Speed Current Mode PWM Control IC for Switching Power Supply ADE-204-026A Z 2nd. Edition October 1997 Description HA17384D/E and HA17385E are PWM control switching regulator IC series suitable for highspeed, current-mode switching power supplies. With ICs from this series and a few external parts, a small, low


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    PDF HA17384DPS/EPS, HA17385EPS ADE-204-026A HA17384D/E HA17385E D-85622 H7C18 5.1 amplifire circuit diagram Hitachi DSA00279

    HSOP056

    Abstract: 2 amplifier circuit diagram Audio Amplifire "line AMPLIFIER" AN7515SH AN7516SH 24C151
    Text: ICs for Audio Common Use AN7515SH Audio signal processing IC for notebook PC • Overview Unit: mm Area of no resin flash 14.00±0.10 6.90 (5.45) 29 0.15±0.05 (1.00) (2.25) 56 (3.70) 6.10±0.10 8.10±0.20 AN7515SH has a speaker power amplifier, headphone power amplifier, line amplifier, electric volume and a bass boost circuit for notebook PC. This


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    PDF AN7515SH AN7515SH HSOP056 2 amplifier circuit diagram Audio Amplifire "line AMPLIFIER" AN7516SH 24C151

    HP C9017-80055-A 54

    Abstract: "Headphone Amplifier" Audio IC BASS BOOST "line AMPLIFIER" AN7515SH AN7516SH main line amplifire
    Text: ICs for Audio Common Use AN7515SH Audio signal processing IC for notebook PC • Overview Unit: mm Area of no resin flash 14.00±0.10 6.90 (5.45) M Di ain sc te on na tin nc ue e/ d AN7515SH has a speaker power amplifier, headphone power amplifier, line amplifier, electric volume and a bass boost circuit for notebook PC. This


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    PDF AN7515SH AN7515SH HSOP056-P-0300A HP C9017-80055-A 54 "Headphone Amplifier" Audio IC BASS BOOST "line AMPLIFIER" AN7516SH main line amplifire

    AN17000A

    Abstract: No abstract text available
    Text: ICs for Audio Common Use AN17000A Audio signal processing IC for notebook PC • Overview Unit: mm Area of no resin flash 14.00±0.10 6.90 (5.45) 29 0.15±0.05 (2.25) (1.00) (3.70) 6.10±0.10 8.10±0.20 56 M Di ain sc te on na tin nc ue e/ d AN17000A has a speaker power amplifier, headphone power amplifier, line amplifier, electronic


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    PDF AN17000A AN17000A

    Amplifire

    Abstract: No abstract text available
    Text: Fixed Inductors for Digital Amplifire デジタルアンプ用 固定インダクタ C3B Inductance Range: 1.1µH ~240µH DIMENSIONS/外形寸法図 C3Bベース付 Type A B A1 D1 C B1 C3B Type C1 Unit: mm FEATURES/特長 • Suitable as an inductor for high current power supplies.


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    PDF C3B-A0105 C3B-A0107 C3B-A0115 C3B-A0116 C3B-A0138 C3B-A0139 C3B-A0140 C3B-A0255 C3B-A0542 C3B-A0577 Amplifire

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQA28N15

    FQA28N15

    Abstract: No abstract text available
    Text: QFET TM FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQA28N15 FQA28N15

    fqp46n15

    Abstract: 228A audio amplifire
    Text: QFET TM FQP46N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQP46N15 FQP46N15 228A audio amplifire

    HRP24

    Abstract: Hitachi DSA00280 diode din HA174
    Text: HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP High Speed Current Mode PWM Control IC for Switching Power Supply ADE-204-028B Z Rev.2 Jul. 2002 Description The HA17384S/H and HA17385H are PWM control switching regulator IC series suitable for highspeed,


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    PDF HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP ADE-204-028B HA17384S/H HA17385H HRP24 Hitachi DSA00280 diode din HA174

    12 pin hitachi flyback transformer

    Abstract: No abstract text available
    Text: HA17384SPS/HPS, HA17385HPS High Speed Current Mode PWM Control IC for Switching Power Supply H IT A C H I ADE-204-028 Z 1st Edition June 1998 Description HA17384S/H and HA17385H are PW M control switching regulator IC series suitable for highspeed, current-mode switching power supplies. W ith ICs from this series and a few external parts, a small, low


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    PDF HA17384SPS/HPS, HA17385HPS ADE-204-028 HA17384S/H HA17385H A17384SPS/HPS, 12 pin hitachi flyback transformer