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    FQA90N15 Price and Stock

    Flip Electronics FQA90N15-F109

    MOSFET N-CH 150V 90A TO-3P
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    DigiKey FQA90N15-F109 Tube 2,130 200
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    onsemi FQA90N15

    MOSFET N-CH 150V 90A TO3PN
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    DigiKey FQA90N15 Tube 450
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    Avnet Americas FQA90N15 Tube 4 Weeks 100
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    Newark FQA90N15 Bulk 450
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    Rochester Electronics FQA90N15 780 1
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    onsemi FQA90N15-F109

    MOSFET N-CH 150V 90A TO3PN
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    Newark FQA90N15-F109 Bulk 450
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    Rochester Electronics FQA90N15-F109 2,217 1
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    TME FQA90N15-F109 1
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    Flip Electronics FQA90N15-F109 2,130
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    onsemi FQA90N15_F109

    Trans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P(N) - Rail/Tube (Alt: FQA90N15-F109)
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    Avnet Americas FQA90N15_F109 Tube 4 Weeks 97
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    FQA90N15_F109 Tube 0 Weeks, 2 Days 223
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    Fairchild Semiconductor Corporation FQA90N15

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    Quest Components FQA90N15 15
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    ComSIT USA FQA90N15 270
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    FQA90N15 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQA90N15 Fairchild Semiconductor N-Channel Power MOSFET Original PDF
    FQA90N15 Fairchild Semiconductor 150V N-Channel QFET; Package: TO-3P; No of Pins: 3; Container: Rail Original PDF
    FQA90N15 Fairchild Semiconductor N-Channel Power MOSFET Original PDF
    FQA90N15_F109 Fairchild Semiconductor 150V N-Channel QFET; Package: TT3P0; No of Pins: 3; Container: Rail Original PDF
    FQA90N15-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 90A TO-3P Original PDF

    FQA90N15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    how to make a amplifire

    Abstract: FQA90N15 FQH90N15 amplifir audio amplifire
    Text: FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 220 nC)


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    PDF FQH90N15 FQA90N15 how to make a amplifire FQA90N15 amplifir audio amplifire

    Untitled

    Abstract: No abstract text available
    Text: FQA90N15_F109 N-Channel QFET MOSFET 150 V, 90 A, 18 mΩ Features Description • RDS on = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQA90N15

    Untitled

    Abstract: No abstract text available
    Text: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQH90N15 FQA90N15 FQA90N15

    FQH90N15

    Abstract: F109 FQA90N15 Audio Amplifire mosfet amplifire
    Text: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQH90N15 FQA90N15 FQA90N15 F109 Audio Amplifire mosfet amplifire

    Untitled

    Abstract: No abstract text available
    Text: FQA90N15 N-Channel QFET MOSFET 150 V, 90 A, 18 mΩ Features Description • RDS on = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQA90N15

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA90N15_F109 150V N-Channel MOSFET Features Description • • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQA90N15 220nC) 200pF)

    how to make a amplifire

    Abstract: F109 FQA90N15 FQH90N15
    Text: QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS on = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    PDF FQH90N15 FQA90N15 FQA90N15 how to make a amplifire F109

    F109

    Abstract: FQA90N15
    Text: QFET FQA90N15_F109 150V N-Channel MOSFET Features Description • • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQA90N15 220nC) 200pF) F109

    Untitled

    Abstract: No abstract text available
    Text: FQA90N15 / FQA90N15_F109 N-Channel QFET MOSFET 150 V, 90 A, 18 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    PDF FQA90N15

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    FQA90N08

    Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08
    Text: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214


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    PDF FQA170N06 FQA85N06 FQA65N06 FQA160N08 FQA90N08 FQA70N08 FQA58N08 FQA44N08 SFH9240 SFH9250L FQA90N08 FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    fqa38n30

    Abstract: FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU
    Text: Date Created: 2/8/2004 Date Issued: 2/23/2004 PCN # 20040605 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


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    PDF fairchildse23N60UFDTU SGH30N60RUFDTU SGH40N60UFDTU SGH5N120RUFTU SSH10N60B SSH70N10A TIP141LTU TIP145TU TIP41CPTU FJA13009TU fqa38n30 FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


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    PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    fqa38n30

    Abstract: IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009
    Text: Date Created: 3/3/2004 Date Issued: 3/10/2004 PCN # 20040605-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is the first revision of the PCN 20040605 to issue Final PCN. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


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    PDF 0040605-A KSC3552OTU KSC4010RTU KSC5024YTU KSC5025YTU KSC5030OTU SFH154 SFH9240 SSH10N60B SSH7N60B fqa38n30 IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009