if amplifire
Abstract: 2SC5079
Text: 2SC5079 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK–4 Features 2 • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter 3. Base
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2SC5079
2SC5079
if amplifire
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Untitled
Abstract: No abstract text available
Text: [AK2922T] AK2922T Zero Drift operational amplifiers Feature AK2922T is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage ± 1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 1.05mA typ./ch (VDD:5.0V), which is available to operate full
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AK2922T]
AK2922T
AK2922T
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AK2920T
Abstract: No abstract text available
Text: ASAHI KASEI [AK2920] AK2920 Zero Drift operational amplifiers Feature AK2920 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage +/- 1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 800μA typ./ch (VDD:5.0V), which is available to operate full
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AK2920]
AK2920
AK2920
MS0953-E-01
AK2920T
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Untitled
Abstract: No abstract text available
Text: Fixed Inductors for Digital Amplifire デジタルアンプ用 固定インダクタ DAWL Inductance: 10µHx2 DIMENSIONS／外形寸法図 14.5 12.0 9.0 4.5 26.0 Max. 25.7 Typ. 14.5 Max. φ0.8 (Unit: mm) FEATURES／特長 • “2 coils in 1 unit” structure, of which each coils is shifted
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999LNF-105
TR6871
LCR4284A
TR6871
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998AMF-134
Abstract: Amplifire
Text: Fixed Inductors for Digital Amplifire デジタルアンプ用 固定インダクタ DASM1620 Inductance Range: 10~33µH DIMENSIONS／外形寸法図 φ17.0 Max. 20.0 Max. 4.5 12.0 φ1.0 方向表示 Direction indication Unit: mm SELECTION GUIDE FOR STANDARD COILS
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DASM1620
998AMF-101
998AMF-131
998AMF-132
998AMF-133
998AMF-134
998AMF-135
998AMF-136
998AMF-137
witF-101
Amplifire
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Untitled
Abstract: No abstract text available
Text: [AK2970] Preliminary AK2970 Zero Drift operational amplifiers Feature AK2970 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage ± 5 V@10V and near zero input offset dirft. It’s operated with very small current consumptions, 1.5mA typ./ch (VDD:10V), which is available to operate full
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AK2970]
AK2970
AK2970
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AK2921T
Abstract: No abstract text available
Text: [AK2921] AK2921 Zero Drift operational amplifiers Feature AK2921 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage +/- 1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 260μA typ./ch (VDD:5.0V), which is available to operate full
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AK2921]
AK2921
AK2921
AK2921T
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Untitled
Abstract: No abstract text available
Text: [AK2970] Preliminary AK2970 Zero Drift operational amplifiers Feature AK2970 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage ± 5 V@10V and near zero input offset dirft. It’s operated with very small current consumptions, 1.5mA typ./ch (VDD:10V), which is available to operate full
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AK2970]
AK2970
AK2970
20nV/Â
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AK2970H
Abstract: No abstract text available
Text: [AK2970] AK2970 Zero Drift Operational Amplifier 1. General Description AK2970 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage ± 5V@10V and near zero input offset dirft. It’s operated with very small current consumptions, 2mA typ. (VDD:10V), which is available to operate full swing
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AK2970]
AK2970
AK2970
20nV/C
AK2970H
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Untitled
Abstract: No abstract text available
Text: [AK2921] AK2921 Zero Drift operational amplifiers Feature AK2921 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage +/- 1.0 V and near zero input offset dirft. It’s operated with very small current consumptions, 260μA typ./ch (VDD:5.0V), which is available to operate full
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AK2921]
AK2921
AK2921
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if amplifire
Abstract: 2SC4964 transistor application Amplifire
Text: 2SC4964 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C
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2SC4964
2SC4964
if amplifire
transistor application
Amplifire
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2SC5078
Abstract: No abstract text available
Text: 2SC5078 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK–4 Features 2 • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter 3. Base
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2SC5078
2SC5078
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cmos aoi
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS [DIG./ANA l/F] M62353P,FP,GP 8BIT 8CH D-A CONVERTER WITH BUFFER AMPLIFIRES DESCRIPTIO N PIN CONFIGURATION(TOP VIEW) The M62353 is an integrated circuit semiconductor of C-MOS structure with 8channels of built-in D-A converters with output buffer operational amplifiers.
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M62353P
M62353
16P2N
16P2E
cmos aoi
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC4905-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter
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2SC4905
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Untitled
Abstract: No abstract text available
Text: N J U 7 8-CHANNEL MULTIPLEXER WITH GENERAL DESCRIPTION The NJU7304 is a C-MOS 8-channel multiplexer with sample and hold function. It consists of C-MOS op amplifires, analog switches, hold-capacitors and 1/8 decoder. One of 8 channels is selected by 3-bit control input
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NJU7304
7304D
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Untitled
Abstract: No abstract text available
Text: 1 h - . u n ; - 1 >1 o ^ il ; , I ' -, h 2 . 2 ^ P a p, e il il 2 PRELIMINARY DATA SHEET NEC / BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2746T, 2747T, 2748T 3 V BIAS SILICON MMIC AMPLIFIRES FOR 900 MHz BAND MOBILE TELEPHONE FEATURES • L o w v o lta g e o p e ra tio n - S in g le s u p p ly v o lta g e 3 .0 V T Y P . m in im u m o p e ra tin g v o lta g e 1.8 V
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juPC2746T
2747T,
2748T
PC2747T:
bM27525
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a06 amplifier
Abstract: digital baffer
Text: MITSUBISHI SEMICONDUCTORS [DIGJANA l/F] M62354P,FP,GP 8BIT 6CH D-A CONVERTER WITH BUFFER AMPLIFIRES PIN CONFIGURATlONfTOP VIEW) DESCRIPTION The M62354 is an integrated circuit semiconductor of C-MOS structure with 6channels of built-in D-A converters with output buffer operational amplifiers.
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M62354P
M62354
16P2N
12bit
16P2E
a06 amplifier
digital baffer
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC5051 -Silicon NPN Bipolar Transistor Application VHF & U HF wide band amplifire CMPAK Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 14.5 dB typ, NF = 1.1 dB typ at f = 900 MHz m * 2 Table 1 Absolute M aximum Ratings Ta = 25°C
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2SC5051
2SC4926.
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Untitled
Abstract: No abstract text available
Text: H ITACH I 2SC4906-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fx = 5.8 G H z typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz Table 1 Absolute M axim um Ratings Ta = 25°C
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2SC4906
2SC4906
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5078 marking
Abstract: No abstract text available
Text: HITACHI 2SC5078-Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK-4 Features • High gain bandwidth product f j = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz ^ 4 Table 1 Absolute Maximum Ratings Ta = 25°C
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2SC5078----Silicon
2SC5078
5078 marking
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2sc4991
Abstract: No abstract text available
Text: HITACHI 2SC4991 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire M PA K -4 Features 3àâ • High gain bandwidth product fT = 9.5 GHz typ • High gain, low noise figure PG = 14.5 dB typ, NF = 1.2 dB typ at f = 900 MHz
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2SC4991
2SC4991
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC4903-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features i • High gain bandwidth product f j = 6 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter 2. Base
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2SC4903
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H914
Abstract: No abstract text available
Text: HITACHI 2SC5079 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire M P A K -4 Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 M Hz ' 4 Table 1 Absolute Maximum Ratings
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2SC5079
H914
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC4965 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CM PAK Features t • Low Ron and high performance for RF switch. • Capable of high density mounting. ^ . 2 Table 1 A bsolu te M a x im u m R atings Ta = 25°C
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2SC4965
2SC4965
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