Untitled
Abstract: No abstract text available
Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE818DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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S7267
Abstract: SIE854DF
Text: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE854DF
08-Apr-05
S7267
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PDF
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B4M1
Abstract: 106 M1
Text: Package Information Vishay Siliconix PolarPAK 1215 CASE OUTLINE E T4 T5 T4 T5 T1 T2 K2 A c T3 K2 K1 c1 H1 T3 b4 b1 b4 b2 M5 H4 M3 M4 D G b3 P1 S H2 M2 b4 A1 b4 M1 D H3 Z Detail Z T7 T7 T6 T8 DIM. T7 T8 MIN. 0.66 0.00 0.40 0.40 0.96 0.10 A A1 b1 b2 b3 b4
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T09-0613-Rev.
10-Aug-09
B4M1
106 M1
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PDF
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Untitled
Abstract: No abstract text available
Text: STK822 N-channel 24V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 24V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance
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STK822
2002/95/EC
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K800
Abstract: JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
K800
JESD97
STK800
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PDF
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Untitled
Abstract: No abstract text available
Text: STK38N3LLH5 N-channel 30 V, 1.3 mΩ, 38 A, PolarPAK STripFET V Power MOSFET Features Type VDSS STK38N3LLH5 30 V RDS on max RDS(on)*Qg 1.55 mΩ 70.9 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)
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STK38N3LLH5
2002/95/EC
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PDF
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SiE812DF
Abstract: SiE812DF-T1-E3
Text: SiE812DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE812DF
08-Apr-05
SiE812DF-T1-E3
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PDF
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SiE802DF
Abstract: No abstract text available
Text: SiE802DF New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES ID rDS(on) (W)e Silicon Limit Package Limit 0.0019 @ VGS = 10 V 202 60 0.0026 @ VGS = 4.5 V 173 60 VDS (V) 30 (A)a Qg (Typ) 50 nC Package Drawing PolarPAK 10 D 9 G 8
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SiE802DF
08-Apr-05
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PDF
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ST T4 1060
Abstract: K822 JESD97 STK822 Transistor k822
Text: STK822 N-channel 25V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 25V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance
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STK822
2002/95/EC
ST T4 1060
K822
JESD97
STK822
Transistor k822
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PDF
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SIE808DF-T1-E3
Abstract: SiE808DF
Text: SiE808DF Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω)e • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling
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SiE808DF
08-Apr-05
SIE808DF-T1-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE822DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiE862DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for
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SiE862DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE850DF
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE808DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE808DF
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE830DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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74485
Abstract: No abstract text available
Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE818DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
74485
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PDF
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SiE850DF
Abstract: 72511
Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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Original
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SiE850DF
18-Jul-08
72511
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PDF
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E208
Abstract: T11B
Text: Device Orientation Vishay Siliconix Device Orientation PolarPAKr DEVICE ORIENTATION Package Method PolarPAK T1 E208 SSAA D T11B E208 SSAA D T11B E208 SSAA D T11B E208 SSAA D T11B User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification—PACK-0007-21
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Specification--PACK-0007-21
T-05206,
E208
T11B
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Tape Information
Abstract: polarpak r030 bo 410
Text: Tape Information Vishay Siliconix PolarPAK CARRIER TAPE 0.30 ± 0.05 4.00 See Note 1 2.00 ± 0.05 See Note 6 Ø 1.50 + 0.0 - 0.1 Ø 1.50 + 0.0 - 0.1 A 1.75 R0.30 TYP. 5.50 ± 0.05 See Note 6 12.00 ± 0.3 4.10 TYP. Bo B B A K1 8.00 Ko R0.30 (TYP.) SECTION A-A
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S-72682-Rev.
14-Jan-08
93-5236-x
Tape Information
polarpak
r030
bo 410
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PDF
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K802
Abstract: STK802 JESD97 STK80
Text: STK802 N-channel 30V - 0.0019Ω - 34A - PolarPAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on RDS(on)*Qg PTOT STK802 30V <0.0025Ω 105.6nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance
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STK802
2002/95/EC
K802
STK802
JESD97
STK80
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JESD97
Abstract: 402L5
Text: STK40N2LLH5 N-channel 25 V, 0.0014 Ω, 40 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max RDS(on)*Qg PTOT STK40N2LLH5 25V <0.0017Ω 61.2nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance
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STK40N2LLH5
STK40N2LLH5
2002/95/EC
JESD97
402L5
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PDF
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STK28N3LLH5
Abstract: No abstract text available
Text: STK28N3LLH5 N-channel 30 V, 0.0029 Ω, 28 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg STK28N3LLH5 30 V <0.0035 Ω 54 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ RDS(on) * Qg industry bechmark
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STK28N3LLH5
2002/95/EC
STK28N3LLH5
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PDF
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Untitled
Abstract: No abstract text available
Text: STK24N4LLH5 N-channel 40 V, 0.004 Ω, 24 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max RDS(on)*Qg STK24N4LLH5 40 V < 0.0048 Ω 96 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ RDS(on) * Qg industry benchmark
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STK24N4LLH5
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: STK32N4LLH5 N-channel 40 V, 0.0023 Ω, 32 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max RDS(on)*Qg PTOT STK32N4LLH5 40V <0.0028Ω 106.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance
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STK32N4LLH5
STK32N4LLH5
2002/95/EC
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