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    ATMEL 634

    Abstract: ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TPRAM; Gate Level or Embedded


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    5962-01B01 4138F ATMEL 634 ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA PDF

    AOI222

    Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
    Text: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    5962-01B01 4138E AOI222 AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter PDF

    AVR 8515 microcontroller datasheet

    Abstract: Atmel 826 ATL35 ATMEL 222 32 bit risc processor using vhdl Atmel 542
    Text: ATL35 GateArray/Embedded Array-1.4-03/02 ATL35 Gate Array/Embedded Array Description. 1-2 ATL35 Array Organization: Table . 1-2


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    ATL35 AVR 8515 microcontroller datasheet Atmel 826 ATMEL 222 32 bit risc processor using vhdl Atmel 542 PDF

    AVR 8515 microcontroller

    Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
    Text: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit


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    22-bit 16-bit 1184B 03/00/xM AVR 8515 microcontroller FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter PDF

    tristate buffer

    Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
    Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to


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    4110F tristate buffer smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E PDF

    54175

    Abstract: PO11V5 16889 49035 56374 28548 58128 13.562 93408 atmel 246
    Text: ERRATA SHEET DATE: April 2009 TO: Aerospace customers SUBJECT: 5V COMPLIANT BUFFERS WITH CORE POWERED AT 2.5V A 5V compliant buffer is a buffer powered by a 5V supply which is able to tolerate with negligible leakage current and without any reliability problems 5V signals (input buffer and pullup/pull-down) or drive 5V signals on its output (output buffer).


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    125pf 130pf 135pf 140pf 145pf 150pf 155pf 160pf 165pf 170pf 54175 PO11V5 16889 49035 56374 28548 58128 13.562 93408 atmel 246 PDF

    Atmel 826

    Abstract: atmel 952 Atmel 642 credence tester sbl 20100 atmel 530 dsp oak pine "VLSI TECHNOLOGY" ARM7TDMI DSP atmel 042 ATMEL 740
    Text: ATL35 Series . Design Overview Table of Contents Section 1 ATL35 Series . 1-1


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    ATL35 Atmel 826 atmel 952 Atmel 642 credence tester sbl 20100 atmel 530 dsp oak pine "VLSI TECHNOLOGY" ARM7TDMI DSP atmel 042 ATMEL 740 PDF

    MH1099

    Abstract: MH1242 PO11V5 4138G
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


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    5962-01B01 4138G MH1099 MH1242 PO11V5 PDF

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    20nts 4110H A101 A201 MH1099E MH1156E MH1242E MH1332E AMI 1108 PDF

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    4110I A101 A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard PDF

    atmel 216

    Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
    Text: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores


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    10T/100 ATL35 0802E 10/99/0M atmel 216 ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state atmel 334 20PCI atmel h 952 PDF

    1025460

    Abstract: 7805 UA1044 UA1068 UA1084 UA1100 UA1120 UA1132 UA1144 UA1160
    Text: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs Conversion to 1,000,000 gates Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads


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    ATMEL 634

    Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
    Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    4110G ATMEL 634 ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E PDF

    USD210

    Abstract: USD228 USD256 USD312 USD384 USD432 USD492 USD594 USD700
    Text: Features • • • • • • • • • • • • • • • • • • • • • • High-performance ULC Family Suitable for Large-sized CPLDs and FPGAs From 46K Gates up to 780K Gates Supported From 18 Kbit to 390 Kbit DPRAM Compatible with Xilinx or Altera


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    4319B USD210 USD228 USD256 USD312 USD384 USD432 USD492 USD594 USD700 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    4110Lâ PDF

    TEMIC PLD

    Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
    Text: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The


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    USD210

    Abstract: USD228 USD256 USD312 USD384 USD432 USD492 USD594 USD700
    Text: Features • • • • • • • • • • • • • • • • • • • • • • High-performance ULC Family Suitable for Large-sized CPLDs and FPGAs From 46K Gates up to 780K Gates Supported From 18 Kbit to 390 Kbit DPRAM Compatible with Xilinx or Altera


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    4319C USD210 USD228 USD256 USD312 USD384 USD432 USD492 USD594 USD700 PDF

    PO11V5

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs From 40K gates up to 780K gates supported Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads


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    4327D PO11V5 PDF

    Untitled

    Abstract: No abstract text available
    Text: UA1 Series 0.35 µm ULC Series Description The UA1 series of ULCs is well suited for conversion large sized CPLDs and FPGAs. Devices are implemented in high–performance CMOS technology with 0.35–µ m drawn channel lengths, and are capable of supporting


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    150ps PO11V PO11V5 325VDD PDF

    4110L

    Abstract: ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    4110L ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E PDF

    ATMEL 634

    Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


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    5962-01B01 4138G ATMEL 634 MH1099 MH1242 PO11V5 dual lvds vhdl PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


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    5962-01B01 4138Gâ PDF

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


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    4110K A101 A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard PDF

    UA1044

    Abstract: UA1068 UA1084 UA1100 UA1120 UA1132 UA1144 UA1160 UA1184 UA1208
    Text: UA1 Series 0.35 µm ULC Series Description The UA1 series of ULCs is well suited for conversion large sized CPLDs and FPGAs. Devices are implemented in high–performance CMOS technology with 0.35–µ m drawn channel lengths, and are capable of supporting


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    150ps PO11V PO11V5 325VDD UA1044 UA1068 UA1084 UA1100 UA1120 UA1132 UA1144 UA1160 UA1184 UA1208 PDF